Abstract:Transition metal dichalcogenides (TMDs) are layered semiconducting van der Waal crystals and promising materials for a wide range of electronic and optoelectronic devices. Realizing practical electrical and optoelectronic device applications requires a connection between a metal junction and a TMD semiconductor. Hence, a complete understanding of electronic band alignments and the potential barrier heights governing the transport through a metal-TMD-metal junction is critical. But, there is a knowledge gap; it is not clear how the energy bands of a TMD align while in contact with a metal as a function of the number of layers. In pursuit of removing this knowledge gap, we have performed conductive atomic force microscopy (CAFM) of few layered (1-5) MoS2 immobilized on ultra-flat conducting Au surfaces (root mean square (RMS) surface roughness <0.2 nm) and indium tin oxide (ITO) substrate (RMS surface roughness <0.7 nm) forming a vertical metal (conductive-AFM tip)-semiconductor-metal device. We have observed that the current increases as the number of layers increases up to 5 layers. By applying Fowler-Nordheim tunneling theory, we have determined the barrier heights for different layers and observed that the barrier height decreases as the number of layers increases. Using density functional theory (DFT) calculation, we successfully demonstrated that the barrier height decreases as the layer number increases. By illuminating the TMDs on a transparent ultra-flat conducting ITO substrate, we observed a reduction in current when compared to the current measured in the dark, hence demonstrating negative photoconductivity. Our study provides a fundamental understanding of the local electronic and optoelectronic behaviors of TMD-metal junction, and may pave an avenue toward developing nanoscale electronic devices with tailored layer-dependent transport properties.

Weak Distance Dependence of Hot-Electron-Transfer Rates at the Interface between Monolayer MoS<sub>2</sub> and Gold

Electron transport across a metal/MoS$_2$ interface: dependence on contact area and binding distance

Photo-physics and electronic structure of lateral graphene/MoS2 and metal/MoS2 junctions

Distinguishing Ultrafast Energy Transfer in Atomically Thin MoS2/WS2 Heterostructures

Layer Dependent Interfacial Transport and Optoelectrical Properties of MoS2 on Ultra-flat Metals

Direct Hot-Electron Transfer at the Au Nanoparticle/Monolayer Transition-Metal Dichalcogenide Interface Observed with Ultrahigh Spatiotemporal Resolution.

Electronic interfacial thermal conductance between metal nano-films in sub-picosecond non-equilibrium transport process

Electron Transport and Device Physics in Monolayer Transition-Metal Dichalcogenides

Metal Contacts On Physical Vapor Deposited Monolayer Mos

Interface-engineered Au@MoS 2 Core-Shell Heterostructures with Superior Hot-Carrier Transfer Dynamics for Plasmonics and Optoelectronics

Investigation of Interface Interactions Between Monolayer MoS 2 and Metals: Implications on Strain and Surface Roughness

Enhanced Conductivity Along Lateral Homojunction Interfaces of Atomically Thin Semiconductors

Influence of MoS 2 -metal interface on charge injection: a comparison between various metal contacts

Relaxation and Transfer of Photoexcited Electrons at a Coplanar Few-Layer 1 T′/2H-MoTe2 Heterojunction

Ultrafast Charge Transfer Dynamics at the MoS$_2$/Au Interface Observed via Optical Spectroscopy under Ambient Conditions

Investigating Metal Dopants for Lowering the Contact Resistance of Top Gold Contacted Monolayer MoS2

Multi-terminal electrical transport measurements of molybdenum disulphide using van der Waals heterostructure device platform

Optical spectroscopic detection of Schottky barrier height at a two-dimensional transition-metal dichalcogenide/metal interface

Low Contact Resistance on Monolayer MoS2 Field-Effect Transistors Achieved by CMOS-Compatible Metal Contacts

Spatially heterogeneous ultrafast interfacial carrier dynamics of 2D-MoS2 flakes

Effect of Interfacial Defects on the Electronic Properties of MoS$_2$ Based Lateral T-H Heterophase Junctions