Relaxation and Transfer of Photoexcited Electrons at a Coplanar Few-Layer 1 T′/2H-MoTe2 Heterojunction

Aiqin Hu,Xiaolong Xu,Wei Liu,Shengnan Xu,Zhaohang Xue,Bo Han,Shufeng Wang,Peng Gao,Quan Sun,Qihuang Gong,Yu Ye,Guowei Lu
DOI: https://doi.org/10.1038/s43246-020-00062-6
2020-01-01
Communications Materials
Abstract:Fundamental dynamic processes at the electronic contact interface, such as carrier injection and transport, become pivotal and significantly affect device performance. Time-resolved photoemission electron microscopy (TR-PEEM) with high spatiotemporal resolution provides unprecedented abilities of imaging the electron dynamics at the interface. Here, we implement TR-PEEM to investigate the electron dynamics at a coplanar metallic 1 T′-MoTe 2 /semiconducting 2H-MoTe 2 heterojunction. We find the non-equilibrium electrons in the 1 T′-MoTe 2 possess higher energy than those in the 2H-MoTe 2 . The non-equilibrium photoelectrons collapse and relax to the lower energy levels in the order of picoseconds. The photoexcited electrons transfer from 1 T′-MoTe 2 to 2H-MoTe 2 with at a rate of ~0.8 × 10 12 s −1 (as fast as 1.25 ps). These findings contribute to our understanding of the behavior of photoexcited electrons in heterojunctions and the design of in-plane optoelectronic devices.
What problem does this paper attempt to address?