Abstract:Single-Dirac-cone topological insulators (TI) are the first experimentally discovered class of three dimensional topologically ordered electronic systems, and feature robust, massless spin-helical conducting surface states that appear at any interface between a topological insulator and normal matter that lacks the topological insulator ordering. This topologically defined surface environment has been theoretically identified as a promising platform for observing a wide range of new physical phenomena, and possesses ideal properties for advanced electronics such as spin-polarized conductivity and suppressed scattering. A key missing step in enabling these applications is to understand how topologically ordered electrons respond to the interfaces and surface structures that constitute a device. Here we explore this question by using the surface deposition of cathode (Cu/In/Fe) and anode materials (NO$_2$) and control of bulk doping in Bi$_2$Se$_3$ from P-type to N-type charge transport regimes to generate a range of topological insulator interface scenarios that are fundamental to device development. The interplay of conventional semiconductor junction physics and three dimensional topological electronic order is observed to generate novel junction behaviors that go beyond the doped-insulator paradigm of conventional semiconductor devices and greatly alter the known spin-orbit interface phenomenon of Rashba splitting. Our measurements for the first time reveal new classes of diode-like configurations that can create a gap in the interface electron density near a topological Dirac point and systematically modify the topological surface state Dirac velocity, allowing far reaching control of spin-textured helical Dirac electrons inside the interface and creating advantages for TI superconductors as a Majorana fermion platform over spin-orbit semiconductors.

All-Optically Controlled Topological Transistor Based on Xenes

Topological Physics of Xenes

Topological THz On-Chip Valley-Spin Converter

Reversible engineering of topological insulator surface state conductivity through optical excitation

Photoinduced Topological Phase Transition and Spin Polarization in A Two-Dimensional Topological Insulator

Phase Transition And Topological Transistors Based On Monolayer Na3bi Nanoribbons

A Single‐Electron Transistor Made of a 3D Topological Insulator Nanoplate

Electrically modulated Josephson junction of light-dressed topological insulators

Non-Hermitian topological phase transitions controlled by nonlinearity

Topological Semimetal Nanostructures: from Properties to Topotronics

Normal-to-topological insulator martensitic phase transition in group-IV monochalcogenides driven by light

Electron dynamics in topological insulator based semiconductor-metal interfaces (topological p-n interface based on Bi2Se3 class)

Single-Electron Transistor Made of a 3D Topological Insulator Nanoplate

Topological Insulator Bi2Se3 Nanowire Field Effect Transistors

Electronically-driven switching of topology in LaSbTe

Optical-pump terahertz-probe spectroscopy of the topological crystalline insulator Pb1-xSnxSe through the topological phase transition

Topological Insulator Bi2se3 Nanowire High Performance Field-Effect Transistors

Topological Insulator Metamaterial with Giant Circular Photogalvanic Effect

Two-dimensional graphene-like Xenes as potential topological materials

Gate-Controlled Surface Conduction in Na-Doped Bi2te3 Topological Insulator Nanoplates

Engineering ideal helical topological networks in stanene via Zn decoration