Abstract:We have fabricated carbon nanotube and MoS2 field-effect transistors with asymmetric contact forms of source-drain electrodes, from which we found the current directionality of the devices and different contact resistances under the two current directions. By designing various structures, we can conclude that the asymmetric electrical performance was caused by the difference in the effective Schottky barrier height (ΦSB) caused by the different contact forms. A detailed temperature-dependent study was used to extract and compare the ΦSB for both contact forms of CNT and MoS2 devices; we found that the ΦSB for the metal-on-semiconductor form was much lower than that of the semiconductor-on-metal form and is suitable for all p-type, n-type, or ambipolar semiconductors. This conclusion is meaningful with respect to the design and application of nanomaterial electronic devices. Additionally, using the difference in barrier height caused by the contact forms, we have also proposed and fabricated Schottky barrier diodes with a current ratio up to 104; rectifying circuits consisting of these diodes were able to work in a wide frequency range. This design avoided the use of complex chemical doping or heterojunction methods to achieve fundamental diodes that are relatively simple and use only a single material; these may be suitable for future application in nanoelectronic radio frequency or integrated circuits.

Extraction and Analysis of the Characteristic Parameters in Back-to-Back Connected Asymmetric Schottky Diode

Advances in Schottky Parameter Extraction and Applications

Extraction of the Schottky parameters in metal-semiconductor-metal diodes from a single current-voltage measurement

Current-voltage Characteristics and Parameter Retrieval of Semiconducting Nanowires

Modeling of PSD based on Schottky-barrier junction

A Universal Extraction Method for Physical Parameters Applied for J–V Curves of Solar Cells

A Novel Empirical Model for CMOS Schottky Diodes up to 67 GHz

Accurate Modeling of Ni/6H-SiC Schottky Barrier Diode (SBD) Forward Characteristics at High Current Densities

Analysis of the Schottky Barriers with Au-Si Diode as Example

Study on the Extraction of PN Diode Parametersfrom Forward I-V Characteristics

Analyses and Experiments of the Schottky Contact Super Barrier Rectifier (SSBR)

Rf Characterization And Modeling Of Cmos Schottky Diodes

Numerical and Experimental Analysis of Single Crystal Diamond Schottky Barrier Diodes

A Comprehensive Atomic Study Of Carbon Nanotube Schottky Diode Using First Principles Approach

Influence of Asymmetric Contact Form on Contact Resistance and Schottky Barrier, and Corresponding Applications of Diode

Comprehensive experimental study on Schottky contact super barrier rectifier

A Current–Voltage Model for Double Schottky Barrier Devices

Thermal Analysis of THz Schottky Diode Chips with Single and Double-Row Anode Arrangement

Diode Parameter Extraction by a Linear Cofactor Difference Operation Method

A Detailed Study of the Effect of Schottky Barrier on the Dark Current Density-Voltage Characteristics of Cds/Cdte Solar Cells

Accurate Electrical Characterization of Forward AC Behavior of Real Semiconductor Diode: Giant Negative Capacitance and Nonlinear Interfacial Layer