Forward Gated-Diode Method For Parameter Extraction Of Mosfets
Chenfei Zhang,Chenyue Ma,Guo Xinjie,Xiufang Zhang,Jin He,Wang Guozeng,Yang Zhang,Liu Zhiwei,张辰飞,马晨月,郭昕婕,张秀芳,何进,王国增,杨张,刘志伟
DOI: https://doi.org/10.1088/1674-4926/32/2/024001
2011-01-01
Journal of Semiconductors
Abstract:The forward gated-diode method is used to extract the dielectric oxide thickness and body doping concentration of MOSFETs, especially when both of the variables are unknown previously. First, the dielectric oxide thickness and the body doping concentration as a function of forward gated-diode peak recombination-generation (R-G) current are derived from the device physics. Then the peak R-G current characteristics of the MOSFETs with different dielectric oxide thicknesses and body doping concentrations are simulated with ISE-Dessis for parameter extraction. The results from the simulation data demonstrate excellent agreement with those extracted from the forward gated-diode method.