Thermoelectric Properties of Low Te Concentration‐Doped Cu2ZnSnSe4‐Based Quaternary Alloys

Taichang Huo,Fahad Mehmood,Hongchao Wang,Wenbin Su,Xue Wang,Tingting Chen,Kaiqi Zhang,Juanjuan Feng,Chunlei Wang
DOI: https://doi.org/10.1002/pssa.202000198
2020-01-01
Abstract:Quaternary Cu2ZnSnSe4 alloys have attracted more attentions as promising thermoelectric materials due to their instinct low thermal conductivity. Herein, Cu2ZnSnSe4 and Cu2ZnSn0.98Pb0.02Se4−xTex (x = 0.005, 0.010, 0.015, 0.020, 0.025, 0.030) alloys are successfully synthesized by melting, annealing, and hot pressing. All samples show main kesterite structure with slight Cu0.656Te0.344 impurity phases, high relative densities, and homogeneous element distribution. A higher power factor of 678.3 μW K−2m−1 is achieved at 673 K for Cu2ZnSn0.98Pb0.02Se3.975Te0.025 alloy, which is due to the reduction of the electrical resistivity. Meanwhile, the lattice thermal conductivity is slightly increased because the lattice structure is more symmetrical with Te‐doped samples. Combining the increased point defects, the minimum lattice thermal conductivity of 1.5 Wm−1 K−1 is achieved at 673 K. As the comprehensive result, the maximum figure of merit zT of 0.24 has been obtained at 673 K for Cu2ZnSn0.98Pb0.02Se3.975Te0.025 alloy, which is about 24% higher than that of the Cu2ZnSnSe4.
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