Abstract:Strongly correlated electron materials that exhibit rich phase transition and multiple phase separation have shown many fascinating properties. Using these properties in the electronic device will require the ability to control their phase transition and phase separation behaviours. In this work, we report a sensitive electric field control of first-order phase transition in epitaxial (011)-Nd0.5Sr0.5MnO3/0.71Pb(Mg1/3Nb2/3)O3–0.29PbTiO3 (PMN-PT) heterostructure. The pristine film shows phase separation character with the penetration of the ferromagnetic metallic phase into the charge and orbital ordered antiferromagnetic insulating phase, and this was revealed by the XMCD and XLD investigation. The (011)-oriented PMN-PT piezoelectric single crystal adopted can exert anisotropic in-plane tensile strains on the epitaxial Nd0.5Sr0.5MnO3 film when applying the electric field. The coaction of the electric field-induced strain and polarization effects of the PMN-PT piezoelectrics enable the efficient manipulation of orbital ordering and the coupled electronic and magnetic phase transitions. Accordingly, a small +1.6 kV cm−1 electric field can recover the first-order metal-insulator transition which was inhibited in the pristine heterostructure, increase the transition temperature by 56 K and the maximum resistance change reaches 7033%. Furthermore, the electric field demonstrated non-volatile control of magnetization, and the magnetoelectric coefficient reaches 1.89 × 10−7 s m−1 at 200 K. This work indicates that choosing the piezoelectric substrate with appropriate electric-field-induced strain opens a route to designing functional electronic devices where the tunable macroscopic properties derive from strongly interacting degrees of freedom present in the manganite.

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Atomic-scale observations of electrical and mechanical manipulation of topological polar flux closure

Manipulating topological transformations of polar structures through real-time observation of the dynamic polarization evolution

Nonvolatile Ferroelectric Control of Electronic Properties of Bi 2 Te 3

Local optical control of ferromagnetism and chemical potential in a topological insulator

Electric-Field Switching of Magnetic Topological Charge in Type-I Multiferroics

Nonvolatile ferroelectric control of topological states in two-dimensional heterostructures

Nonvolatile ferroelectric control of topological states in 2D heterostructures

Ferroelectrically tunable topological phase transition in In$_2$Se$_3$ thin films

Voltage Control of Metal-Insulator Transition and Non-Volatile Ferroelastic Switching of Resistance in VOx/PMN-PT Heterostructures.

Electrically Tunable Magnetism in Magnetic Topological Insulators

Reversible and nonvolatile manipulation of the spin-orbit interaction in ferroelectric field-effect transistors based on a two-dimensional bismuth oxychalcogenide

Current-induced switching of proximity-induced ferromagnetic surface states in a topological insulator

Electrically Controlled Non-Volatile Switching of Magnetism in Multiferroic Heterostructures Via Engineered Ferroelastic Domain States

Electric-field control of the perpendicular magnetization switching in ferroelectric/ferrimagnet heterostructures

Manipulating ferroelectric topological polar structures with twisted light

Memristive switching in the surface of a charge-density-wave topological semimetal

Sensitive electric field control of first-order phase transition in epitaxial multiferroic heterostructures

Reversible engineering of topological insulator surface state conductivity through optical excitation

Nonvolatile magnetization switching in a single-layer magnetic topological insulator

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