Abstract:Using the density functional theory (DFT) with the generalized gradient approximation (GGA), the structural and electronic properties of wurtzite AlN, GaN, InN, and their related alloys, Al$_x$Ga$_{1-x}$N and In$_x$Ga$_{1-x}$N, were calculated. We have performed accurate {\it ab initio} total energy calculations using the full--potential linearized augmented plane wave (FP--LAPW) method to investigate the structural and electronic properties. In both alloys we found that the fundamental parameters do not follow Vegard's law. The lattice parameters, $a, c,$ and $u$, for the Al$_x$Ga$_{1-x}$N alloy are found to exhibit downward bowing, while for In$_x$Ga$_{1-x}$N there is an upward bowing for the $a$ and $c$ parameters and a downward bowing for the internal parameter, $u$. Furthermore, we found that for both alloys, the band gap value does not follow Vegard's law. As a by--product of our electronic band structure calculations, the effective masses of the binary compounds as well as their related alloys were calculated. We show that the calculated properties for the binary compounds, as well as for the studied alloys, show good agreement with most of the previously reported results. Finally, using the frozen phonon approach, the A$_1(TO)$ mode for the different systems studied in this work was calculated. Our calculations show good agreement with experimental values reported for the binary compounds. For the ternary alloys, our calculations reproduce experimental values for Al$_x$Ga$_{1-x}$N as well as theoretical predictions for In$_x$Ga$_{1-x}$N.

A Model for the Bandgap Energy of the Dilute Nitride Inganas Alloys by Modifying Simplified Coherent Potential Approximation

A Band-Gap Energy Model of the Quaternary Alloy InxGayAl1−x−yN Using Modified Simplified Coherent Potential Approximation

A model for the band gap energy of the N-rich GaN 1-xAs x (0<x≤0.07) and the As-rich GaN 1-xAs x (0.95≤x≤1)

A Modified Simplified Coherent Potential Approximation Model of Band Gap Energy of III–V Ternary Alloys

First-Principles Calculations of Band-Gap Properties of Zinc-Blende Bxga1-Xn and Bxga1-Xnyas1-Y Alloys

Self-consistent Green's function method for dilute nitride conduction band structure

Reduced Hamiltonian for Electronic States of Dilute Nitride Semiconductors

The Parameters in the Band-Anticrossing Model for in X Ga1−x N Y P1−y Before and after Annealing

Band dispersion, scattering rate, and carrier mobility using the poles of Green’s function for dilute nitride alloys

12-band $\textbf{k}\cdot\textbf{p}$ model for dilute bismide alloys of (In)GaAs derived from supercell calculations

Calculation of Optical Response Functions of Dilute-N GaPAsN Lattice-matched to Si

First-principles Study of the Effect of BiGa Heteroantisites in GaAs:Bi Alloy

Band Offset of Gaas/Alxga1-Xas Heterojunctions from Atomistic First Principles

Theoretical Investigation of Structural, Mechanical and Electronic Properties of GaAs1-xNx Alloys under Ambient and High Pressure

Band structure parameters of the nitrides: The origin of the small band gap of InN

Hybrid density functional calculations of the band gap of Ga$_x$In$_{1-x}$N

Conduction Band Offset and Electron Effective Mass in Gainnas/Gaas Quantum-Well Structures with Low Nitrogen Concentration

A model for thermal annealing on forming In—N clusters in InGaNP

Ab initio calculation of structural and electronic properties of Al$_x$Ga$_{1-x}$N and In$_x$Ga$_{1-x}$N alloys

Strain Relaxation and Band-Gap Tunability in Ternary Inxga1-Xn Nanowires

Formation Energies of Substitutional NAs and Split Interstitial Complexes in Dilute GaAsN Alloys with Different Growth Orientations