Ion-beam-etching Based Lift-off for Reliable Patterning of Dense and Inverse Metallic Nanostructures Towards 10-Nm Scale

Pei Zeng,Qing Liu,Mengjie Zheng,Yiqin Chen,Guoyou Liu,Huigao Duan
DOI: https://doi.org/10.1016/j.mee.2020.111406
IF: 2.3
2020-01-01
Microelectronic Engineering
Abstract:Reliable fabrication of metallic patterns at nanoscale is of great interest for various practical applications in nanodevices. Electron-beam-lithography based lift-off is the most often used method to define exquisite metal nanostructures at the 10-nm scale. In a common wet lift-off process, the metal material on top is lifted-off and washed away together with the sacrificial resist layer below. However, the wet lift-off process is sometimes ultrasonic agitation and/or heating-dependent and limited by the probable remained debris problem. In this work, we present an alternative lift-off process to obtain metallic patterns via removing the unwanted parts by using ion beam etching. We demonstrated that this ion-beam-etching based lift-off process is effective for isolated exposed negative-tone resist to fabricate nanoholes and nanoslits array and for dense networked exposed resist to fabricate high-density packed nanostructures. SERS measurements were conducted to demonstrate the molecular detection capability of the nanostructures with tiny gaps fabricated by this ion-beam-etching based lift-off process.
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