Abstract:The high-quality aluminum nitride (AlN) epilayer is the key factor that directly affects the performance of semiconductor deep-ultraviolet (DUV) photoelectronic devices. In this work, to investigate the influence of thickness on the quality of the AlN epilayer, two AlN-thick epi-film samples were grown on c-plane sapphire substrates. The optical and structural characteristics of AlN films are meticulously examined by using high-resolution X-ray diffraction (HR-XRD), scanning electron microscopy (SEM), a dual-beam ultraviolet-visible spectrophotometer, and spectroscopic ellipsometry (SE). It has been found that the quality of AlN can be controlled by adjusting the AlN film thickness. The phenomenon, in which the thicker AlNn film exhibits lower dislocations than the thinner one, demonstrates that thick AlN epitaxial samples can work as a strain relief layer and, in the meantime, help significantly bend the dislocations and decrease total dislocation density with the thicker epi-film. The Urbach's binding energy and optical bandgap (Eg) derived by optical transmission (OT) and SE depend on crystallite size, crystalline alignment, and film thickness, which are in good agreement with XRD and SEM results. It is concluded that under the treatment of thickening film, the essence of crystal quality is improved. The bandgap energies of AlN samples obtained from SE possess larger values and higher accuracy than those extracted from OT. The Bose–Einstein relation is used to demonstrate the bandgap variation with temperature, and it is indicated that the thermal stability of bandgap energy can be improved with an increase in film thickness. It is revealed that when the thickness increases to micrometer order, the thickness has little effect on the change of Eg with temperature.

Nitrogen-ion-energy Dependent Optical and Structural Properties of AlN Films Obtained Using a Filtered Cathodic Vacuum Arc

Structural Properties and Nanoindentation of Aln Films by A Filtered Cathodic Vacuum Arc at Low Temperature

Effect of nitrogen flow ratio on the structure and optical properties of AlN film

Low-temperature Synthesis of AlN Films Through Electron Cyclotron Resonance Plasma-Aided Reactive Pulsed Laser Deposition

Low Temperature Growth of Reactive Partially Ionized Beam Deposited AlN Films

Optical and Structural Properties of Aluminum Nitride Epi-Films at Room and High Temperature

High-quality AlN growth: a detailed study on ammonia flow

Low-temperature Growth of Stoichiometric Aluminum Nitride Films Prepared by Magnetic-Filtered Cathodic Arc Ion Plating

Effect of flux rate on the growth of AlN films on sapphire by MNVPE

Investigation of carbon nitride films by cathodic arc evaporation

Structure and Optical Properties of AlN Crystals Grown by Metal Nitride Vapor Phase Epitaxy with Different V/III Ratios.

Carbon Nitride Films Synthesized By Nh3-Ion-Beam-Assisted Deposition

Optical & Electronic Properties of Carbon Nitride Thin Films

Characterization of aluminum nitride thin films by ion beam analysis techniques

Optimization of growth parameters of AlN thin films and investigation of electrical and electroluminescence characteristics from Au/i-AlN/n-GaN UV light-emitting diode

Influence of nitrogen ion energy on photovoltaic new material carbon nitride films

Preparation of Aln Films by Pulsed Laser Deposition Using Sintered Aluminum Nitride and Elemental Aluminum As Raw Materials

AlN Thin Films Grown on Different Substrates by Metal Nitride Vapor Phase Epitaxy

Polycrystalline InN thin films prepared by ion-beam-assisted filtered cathodic vacuum arc technique

The optical properties and applications of AlN thin films prepared by a helicon sputtering system

Effect of Al Substrate Nitridation on the Properties of AlN Films Grown by Pulsed Laser Deposition and Its Mechanism