Abstract:Heterogeneous and monolithic integration of the versatile low loss silicon nitride platform with low temperature materials such as silicon electronics and photonics, III-V compound semiconductors, lithium niobate, organics, and glasses, has been inhibited by the need for high temperature annealing as well as the need for different process flows for thin and thick waveguides. New techniques are needed to maintain the state-of-the-art losses, nonlinear properties, and CMOS compatible processes while enabling this next generation of 3D silicon nitride integration. We report a significant advance in silicon nitride integrated photonics, demonstrating the lowest losses to date for an anneal-free process at a maximum temperature of 250 C, with the same deuterated silane based fabrication flow, for nitride and oxide, for an order of magnitude range in nitride thickness without requiring stress mitigation or polishing. We report record low losses for anneal-free nitride core and oxide cladding, enabling 1.77 dB/m loss and 14.9 million Q for 80 nm nitride core waveguides, more than half an order magnitude lower loss than previously reported 270 C processes, and 8.66 dB/m loss and 4.03 million Q for 800 nm thick nitride. We demonstrate laser stabilization with over 4 orders of magnitude frequency noise reduction using a thin nitride reference cavity. And using a thick nitride micro-resonator, we demonstrate parametric gain and Optical Parametric Oscillation (OPO) with the lowest reported OPO threshold per unit resonator length for low temperature fabricated nitride, and supercontinuum generation over two octaves. These results represent a significant step towards a uniform ultra-low loss silicon nitride homogeneous and heterogeneous platform for both thin and thick waveguides capable of linear and nonlinear photonic circuits and integration with low temperature materials and processes.

Ultrashallow Junction Electrodes In Low-Loss Silicon Microring Resonators

High-Performance Electro-Optic Modulator on Silicon Nitride Platform with Heterogeneous Integration of Lithium Niobate

SiN-SOI Multilayer Platform for Prospective Applications at 2 Μm

Low-loss integrated nanophotonic circuits with layered semiconductor materials

Low-Loss Silicon Platform for Broadband Mid-Infrared Photonics

Electrically‐Driven Photonic Crystal Lasers with Ultra‐low Threshold

Ultrahigh-Q AlGaAs-on-insulator Microresonators for Integrated Nonlinear Photonics.

CMOS-fabricated ultraviolet light modulators using low-loss alumina piezo-optomechanical photonic circuits

Permanent mitigation of loss in ultrathin SOI high-Q resonators using UV light

Anneal-free ultra-low loss silicon nitride integrated photonics

Ultra-low loss waveguide platform in silicon photonics

Ultra-Low-Loss Silicon Nitride Photonics Based on Deposited Films Compatible with Foundries

Ultra-low threshold lasing through phase front engineering via a metallic circular aperture

300-Nm-thick, Ultralow-Loss Silicon Nitride Photonic Integrated Circuits by 8-In. Foundry Production

Monolayer semiconductor nanocavity lasers with ultralow thresholds

Loss and Coupling Tuning via Heterogeneous Integration of MoS2 Layers in Silicon Photonics

Ultra-high-Q UV microring resonators based on single-crystalline AlN platform

Exploiting Ultra-Low Loss Silicon Nitride Platform for Various Applications (Invited).

Ultralow-Loss Silicon Photonics beyond the Singlemode Regime

Monolithic Ultrahigh-Q Lithium Niobate Microring Resonator

Low Loss Multi-Layer Wiring for Superconducting Microwave Devices