How to Measure Thermoelectric Properties Reliably
Tian-Ran Wei,Mengjia Guan,Junjie Yu,Tiejun Zhu,Lidong Chen,Xun Shi
DOI: https://doi.org/10.1016/j.joule.2018.10.020
IF: 46.048
2018-01-01
Joule
Abstract:Tian-Ran Wei is currently an assistant professor at the School of Materials Science and Engineering, Shanghai Jiao Tong University. He obtained his PhD from Tsinghua University in 2017. He worked at Shanghai Institute of Ceramics, Chinese Academy of Sciences from 2017 to 2018 before joining Shanghai Jiao Tong University. His current research focuses on advanced thermoelectric materials.Mengjia Guan is a PhD student at the Shanghai Institute of Ceramics, Chinese Academy of Sciences. She obtained her BS from Central South University in 2014. Her research focuses on superionic copper chalcogenide thermoelectric materials.Junjie Yu is a PhD student at the School of Materials Science and Engineering, Zhejiang University. He obtained his BS from Zhejiang University in 2015. His research focuses on half-Heusler thermoelectric materials.Tiejun Zhu is the Qiushi Distinguished Professor of Materials Science and Engineering at Zhejiang University. He obtained his PhD from Zhejiang University in 2001. He was a research fellow at Singapore-MIT Alliance from 2002 to 2004, and a visiting scientist at California Institute of Technology in 2011. He has been a faculty member at Zhejiang University since 2004. His current research focuses on the advanced fabrication, microstructure, and transport mechanisms of high-efficiency thermoelectric materials.Lidong Chen is a Professor of Shanghai Institute of Ceramics, Chinese Academy of Sciences (SICCAS), and the Co-Editor-in-Chief of npj Computational Materials. He received his BS (1982) from Hunan University and doctorate (1990) from Tohoku University. After being chief engineer and postdoctoral appointment at Riken Cooperation and Japan National Aerospace Laboratory, respectively, he worked at the Institute for Materials Research, Tohoku University, as research associate and associate professor. He joined SICCAS as a professor in 2001. His research mainly focuses on the design, synthesis, and characterization of thermoelectric materials and devices.Xun Shi is a professor at the School of Materials Science and Engineering, Shanghai Jiao Tong University. He received his BS (2000) in Tsinghua University and PhD (2005) in the University of Chinese Academy of Sciences. He worked at the University of Michigan (USA) as a postdoc from 2007 to 2009. He then joined the R&D center in General Motors. Since 2010 he has been a professor at the Shanghai Institute of Ceramics, Chinese Academy of Sciences (SICCAS). His current research focuses on advanced thermoelectric materials and flexible semiconductors. Tian-Ran Wei is currently an assistant professor at the School of Materials Science and Engineering, Shanghai Jiao Tong University. He obtained his PhD from Tsinghua University in 2017. He worked at Shanghai Institute of Ceramics, Chinese Academy of Sciences from 2017 to 2018 before joining Shanghai Jiao Tong University. His current research focuses on advanced thermoelectric materials. Mengjia Guan is a PhD student at the Shanghai Institute of Ceramics, Chinese Academy of Sciences. She obtained her BS from Central South University in 2014. Her research focuses on superionic copper chalcogenide thermoelectric materials. Junjie Yu is a PhD student at the School of Materials Science and Engineering, Zhejiang University. He obtained his BS from Zhejiang University in 2015. His research focuses on half-Heusler thermoelectric materials. Tiejun Zhu is the Qiushi Distinguished Professor of Materials Science and Engineering at Zhejiang University. He obtained his PhD from Zhejiang University in 2001. He was a research fellow at Singapore-MIT Alliance from 2002 to 2004, and a visiting scientist at California Institute of Technology in 2011. He has been a faculty member at Zhejiang University since 2004. His current research focuses on the advanced fabrication, microstructure, and transport mechanisms of high-efficiency thermoelectric materials. Lidong Chen is a Professor of Shanghai Institute of Ceramics, Chinese Academy of Sciences (SICCAS), and the Co-Editor-in-Chief of npj Computational Materials. He received his BS (1982) from Hunan University and doctorate (1990) from Tohoku University. After being chief engineer and postdoctoral appointment at Riken Cooperation and Japan National Aerospace Laboratory, respectively, he worked at the Institute for Materials Research, Tohoku University, as research associate and associate professor. He joined SICCAS as a professor in 2001. His research mainly focuses on the design, synthesis, and characterization of thermoelectric materials and devices. Xun Shi is a professor at the School of Materials Science and Engineering, Shanghai Jiao Tong University. He received his BS (2000) in Tsinghua University and PhD (2005) in the University of Chinese Academy of Sciences. He worked at the University of Michigan (USA) as a postdoc from 2007 to 2009. He then joined the R&D center in General Motors. Since 2010 he has been a professor at the Shanghai Institute of Ceramics, Chinese Academy of Sciences (SICCAS). His current research focuses on advanced thermoelectric materials and flexible semiconductors. Thermoelectric (TE) materials, which can convert energy directly between heat and electricity, have gained a lot of attention recently.1Snyder G.J. Toberer E.S. Complex thermoelectric materials.Nat. Mater. 2008; 7: 105-114Crossref PubMed Scopus (8002) Google Scholar The energy conversion efficiency is determined by a material's TE performance, which is governed by the dimensionless figure of merit zT (= S2σT/κ, where S is the Seebeck coefficient, σ is the electrical conductivity, T is the absolute temperature, and κ is the thermal conductivity). A high conversion efficiency requires a high zT, i.e., large S and σ but low κ. The zT is difficult to directly measure in experiments, but can be calculated using measured S, σ, and κ. S and σ can be directly measured at both low and high temperatures. The κ below room temperature can also be directly measured by using instruments such as the physical property measurement system (PPMS). However, the κ above room temperature is usually calculated via κ = CPdλ through measuring the material's heat capacity CP, density d, and thermal diffusivity λ. The measurement principles and methods for TE properties are shown by Borup et al.2Borup K.A. de Boor J. Wang H. Drymiotis F. Gascoin F. Shi X. Chen L. Fedorov M.I. Müller E. Iversen B.B. et al.Measuring thermoelectric transport properties of materials.Energy Environ. Sci. 2015; 8: 423-435Crossref Google Scholar Usually the uncertainties of commercial instruments are ±3% for σ, ±4% for S, ±1% for d, ±3% for λ, and ±5% for high-temperature CP. Thus, the error for zT is more than ±15%. However, the repeatability, which is the closeness of agreement between successive measurements carried out under the same condition, can be much better than the accuracy when using those well-established commercial instruments. Thus repeatability is more important and useful when comparing TE properties in experiments. Over the past 20 years many publications have shown that zT values are significantly improved in many types of TE materials, which is mainly ascribed to the deep understanding on TE transport mechanisms and quick technology innovation.1Snyder G.J. Toberer E.S. Complex thermoelectric materials.Nat. Mater. 2008; 7: 105-114Crossref PubMed Scopus (8002) Google Scholar However, because it requires measuring a few parameters to calculate zT, the zT values are greatly divergent in some types of TE materials. This gives rise to the question of what are the true zT values in these materials. Furthermore, all the related insightful analyses and discussions should be based on correct experimental data, which relies on reliable measurements. In this commentary, we summarize a few key concerns about TE property measurements covering all electrical and thermal transport parameters. Various possibilities in the measurements will be given to show how much the properties deviate from their exact values. These concerns should be taken seriously during measurements in order to obtain reliable zT values. Figure 1A is the schematic map for S and σ measurements in commercial instruments such as Ulvac-Riko ZEM and Linseis LSR systems. For a specimen under temperature gradient, the temperatures at A and B are measured by two thermocouples to calculate the temperature difference (ΔT = TB − TA). The voltage (ΔV) between A and B is measured by using the positive (or negative) wires of two thermocouples. Usually at least three pairs of ΔV and ΔT are collected to plot the ΔV∼ΔT curve. The curve slope is measured Seebeck coefficient, SM, at temperature (TA + TB)/2. The metal wires themselves also have Seebeck coefficients (SW), which has to be subtracted from SM to obtain the material's S. Such correction is automatically implemented in commercial instruments but is often neglected in home-made instruments. Frequently, ΔV is not zero at ΔT = 0 K. This will introduce noticeable voltage offset for SM.2Borup K.A. de Boor J. Wang H. Drymiotis F. Gascoin F. Shi X. Chen L. Fedorov M.I. Müller E. Iversen B.B. et al.Measuring thermoelectric transport properties of materials.Energy Environ. Sci. 2015; 8: 423-435Crossref Google Scholar, 3Iwanaga S. Toberer E.S. LaLonde A. Snyder G.J. A high temperature apparatus for measurement of the Seebeck coefficient.Rev. Sci. Instrum. 2011; 82: 063905Crossref PubMed Scopus (224) Google Scholar If S is directly calculated by ΔV/ΔT, SM may significantly shift from its true value.4Liu Y. Fu C. Xie H. Zhao X. Zhu T. Reliable measurements of the Seebeck coefficient on a commercial system.J. Mater. Res. 2015; 30: 2670-2677Crossref Scopus (6) Google Scholar The ΔV∼ΔT curve may deviate from linearity if ΔT is too large (ΔT > 10 K) and has appreciable errors if ΔT is too small (ΔT < 1 K). Thus the ideal ΔT range (ΔTmax–ΔTmin) should be between 3 and 5 K. The S∼T plot of Nb0.85CoSb is shown in Figure 1B. A small ΔT range (squares, ∼1.2 K) gives a zigzag curve, while a large ΔT range (circles, ∼3.2 K) gives a very smooth curve. Correspondingly, the measurement error for the large ΔT range, marked by the shadow, is obviously smaller than the small ΔT range. As indicated in the inset of Figure 1B, when ΔT range is small, the error is large and the derived S deviates much from the real value. On the contrary, if a reasonably larger ΔT range is applied, the measured S value is close to the real one. It is noteworthy that people usually set a fixed temperature difference (∼40 K) between two electrodes (Figure 1A), but the ΔT range may become smaller and smaller when chamber temperature increases because of severe heat radiation, resulting in noticeable fluctuations and errors in the measurement (see the data above 1,000 K in Figure 1B). Therefore, the applied temperature gradient between two electrodes should be carefully programmed to maintain a proper ΔT range during the whole measurement. In addition, several other factors such as the differences in thermocouples, reactions between thermocouple and samples, bad contact, and cold finger effect2Borup K.A. de Boor J. Wang H. Drymiotis F. Gascoin F. Shi X. Chen L. Fedorov M.I. Müller E. Iversen B.B. et al.Measuring thermoelectric transport properties of materials.Energy Environ. Sci. 2015; 8: 423-435Crossref Google Scholar, 5Yazdani S. Kim H.Y. Pettes M.T. Uncertainty analysis of axial temperature and Seebeck coefficient measurements.Rev. Sci. Instrum. 2018; 89: 084903Crossref Scopus (6) Google Scholar can also affect the measured S. In both commercial and home-made instruments, the thermocouples may become polluted and dirty after running for a long time. Thermocouples may react with materials during measurements to change S and σ. Figures 1C and 1D compare TE properties of Ba0.08La0.05Yb0.04Co4Sb12 measured by the dirty and new thermocouples. The deviations for S and σ are ∼10% around 800 K, leading to a deviation near 30% for power factor (PF). The dirty thermocouples give a zT over 2.1, 20% higher than the reported 1.7.6Shi X. Yang J. Salvador J.R. Chi M. Cho J.Y. Wang H. Bai S. Yang J. Zhang W. Chen L. Multiple-filled skutterudites: high thermoelectric figure of merit through separately optimizing electrical and thermal transports.J. Am. Chem. Soc. 2011; 133: 7837-7846Crossref PubMed Scopus (1135) Google Scholar Therefore, timely cleaning and periodical replacement of thermocouples as well as clocked calibrating on standard samples are indispensable for reliable measurements. In addition, reasonably large pressure is required for good contacts between thermocouples/electrodes and thermoelectric materials, but too large a pressure may lead to material's bending at high temperatures. The standard four-probe method is widely used in commercial instruments for σ measurement (Figure 1A), which is calculated by σ = L/(RAS) where R is the electrical resistance between points A and B, AS is the cross-sectional area, and L is the probe distance. This requires an accurate probe distance. However, in some commercial instruments, the probes are fixed with a default probe distance that is not automatically calibrated for every measurement. After running for a long time and thermal cycling, L may be greatly shifted from its default value due to thermal expansion or aging. Therefore, probe distance must be measured for each measurement. Low-temperature κ is usually measured by the thermal transport option (TTO) in PPMS. The measurement principle of two-probe configuration is schematically depicted in Figure 2A. Heat pulse is applied on one side of the sample by running current through the heat shoe. The temperatures of both sides are recorded to calculate the temperature difference ΔT = Thot− Tcold. κ can then be derived via Fourier 's law for the given heat power and sample size. The thermometers (Cernox, low-temperature thermocouple) are easily damaged and their resistances may be shifted from the original calibrations. In this case, incorrect κ values and temperature dependence may be obtained. As shown in Figure 2B, multiple-filled skutterudites exhibit a somewhat amorphous character but are actually typical crystalline compounds. After calibration of thermometers on standard samples, the crystalline behavior in κL-T is observed.7Shi X. Salvador J.R. Yang J. Wang H. Thermoelectric properties of n-type multiple-filled skutterudites.J. Electron. Mater. 2009; 38: 930-933Crossref Scopus (49) Google Scholar Therefore, it is recommended to regularly calibrate thermometers. Sample size also strongly affects the measurements when using PPMS. As recommended by the PPMS manual, for common TE materials with κ ranging from 2 to 5 W/mK at 300 K, bar-shaped samples are recommended, but if κ is smaller than 1.5 W/mK, a disk sample with very small height is required. Thermal diffusivity λ is usually measured by the laser flash method. As shown in Figure 2C, laser heats one side of sample and the heat signal on the back side is simultaneously recorded varying with time. Normally, the back-side signal quickly increases to reach a peak value and then slowly decays. λ is calculated via λ=0.1388z2/t1/2, where z is the thickness of the sample and t1/2 is the time when the signal of the back side reaches the half-maximum value. The raw signal is automatically corrected by the software considering the shift of baseline (left panel of Figure 2D). The correct signal shape should be like that shown in Figure 2C, otherwise it may give extra errors to the measured λ. For materials with large thickness and low κ, the signal correction may fail to give reliable curves. For example, Cu2Se has very low κ and λ. For a disk with a diameter of 10 mm, when its thickness is 1 mm we observe correct back-side signals and the t1/2 is nearly the same for three independent measurements (shots), giving λ = (0.573 ± 0.003) mm2/s, although the signal intensity of the first shot is smaller than that of the second and third. However, when its thickness is 3 mm, the raw signals for all three shots do not have peaks. Furthermore, the baseline correction only works for the first shot and fails for the other two. Thus a large discrepancy in λ is obtained for the three shots with the values of 0.537, 0.308, and 0.337 mm2/s. The instrument finally uses the averaged value, which deviates considerably from the true value. Therefore, the back-side signal should be checked for each measurement. To avoid failure of signal correction, low-κ materials should have very small thickness while high-κ materials should have reasonably large thickness. In addition, sensor contamination or lack of liquid nitrogen can cause poor signals. Of course, the samples must not be tilted and the size of the sample should fit the holder well to avoid the leakage of light. Differential scanning calorimetry (DSC) and PPMS are more frequently used for high- and low-temperature CP measurements, respectively. Similar to low-temperature κ measurement, the calibration in PPMS must be often performed to avoid incorrect CP measurement. For DSC measurement, pellets, rather than powders, should be used to avoid thermal inhomogeneity and gas desorption on the particle surface. Unfortunately, for many TE materials, although a standard measurement process is carried out, the CP measured by DSC may have bad repeatability from time to time and from person to person even when using the same sample and instrument. High-temperature CP can also be measured together with λ by a commercial laser flash instrument, but the results are usually unreliable.8May A.F. Toberer E.S. Saramat A. Snyder G.J. Characterization and analysis of thermoelectric transport in n-type Ba8Ga16-xGe30+x.Phys. Rev. B. 2009; 80: 125205Crossref Scopus (346) Google Scholar Therefore, it is strongly suggested to use theoretically calculated CP values to compare with the experimental data (Figure 2E). The calculated CP using the Dulong-Petit value is too rough, but is reasonably acceptable when including the contribution from the material's thermal expansion. Thus the total CP is a sum of Cph,H, Cel, and CD, which are contributed by phonons, electrons, and dilation of the lattice, respectively.9Delaire O. May A.F. McGuire M.A. Porter W.D. Lucas M.S. Stone M.B. Abernathy D.L. Ravi V.A. Firdosy S.A. Snyder G.J. Phonon density of states and heat capacity of La3-xTe4.Phys. Rev. B. 2009; 80: 184302Crossref Scopus (81) Google Scholar For anisotropic materials, all the properties must be measured along the same direction, which is usually ignored for new anisotropic materials. If the direction of low κ and the direction of high PF are combined, the zT will be overestimated. For example, the anisotropy of polycrystalline Bi2Te3-based materials is largely related to its texture degree, which strongly depends on fabrication processing. Samples with high texture degree can show unreasonably high zT if the electrical and thermal properties are measured along different directions.10Shen J. Hu L. Zhu T. Zhao X. The texture related anisotropy of thermoelectric properties in bismuth telluride based polycrystalline alloys.Appl. Phys. Lett. 2011; 99: 124102Crossref Scopus (112) Google Scholar As shown in Figure 3A, even if the anisotropy is not very strong for a hot-pressed (HP) sample, the zT can still be ∼30% higher than the real value. Many measurement errors also come from poor quality of materials, i.e., macroscopic and microscopic inhomogeneity, and chemical and thermal instability. For large-scale samples, chemical composition may be macroscopically non-uniform. As we know, TE properties are very sensitive to carrier concentrations, which may be significantly changed for a tiny composition variation. Taking Cu1.97Se0.5S0.5 as an example, the ingot (the size is Φ10 × 20 mm) after direct melting and annealing processes (Figure 3B) is not homogeneous. The chemical compositions vary from the top to bottom. We cut the pieces from both top and bottom parts to run TE property measurements with the data shown in Figures 3C and 3D. The top has a low PF and κ while the bottom has a high PF and κ. The calculated zTs using different parts are definitely incorrect and greatly shifted from the true value11Zhao K. Qiu P. Song Q. Blichfeld A.B. Eikeland E. Ren D. Ge B. Iversen B.B. Shi X. Chen L. Ultrahigh thermoelectric performance in Cu2-ySe0.5S0.5 liquid-like materials.Mater. Today Phys. 2017; 1: 14-23Crossref Scopus (117) Google Scholar (zT ∼ 1.2, see Figure 3D). Therefore, to obtain correct/reliable zT for large-scale or inhomogeneous materials, it is recommended that specimens from the same part (as close as possible) are used. When using the spark plasma sintering (SPS) technique to sinter TE materials with low melting point and high vapor pressure elements such as In, Ga, and Zn, the large electric current may destroy the local compositions and microstructures to introduce some inhomogeneity if the insulating coating is not good enough. As shown in Figure 3E, In4Se3 prepared by SPS exhibits an “abnormal” transition in S between 400 and 600 K. In contrast, the HP sample has very smooth curves. This phenomenon is probably related to the inhomogeneous distribution of In in an SPS sintered sample. The material's instability may also obviously affect TE property measurements. For composite Ba0.44Co4Sb12/C60, C60 reacts with Ba to form Ba6C60 and reduce Ba content in skutterudites. If the reaction is not completed during measurements, extra chemical potential is generated. Such potential has weak contributions to σ and κ, but sharply increases material's S, as shown in Figure 3F. The S dramatically increases with increasing T, reaching ∼−600 μV/K at 823 K, giving a zT of around 10. However, after annealing the sample at high temperatures for a week, the S is lowered back the normal values, giving a zT a value slightly larger than 1.0.12Shi X. Chen L.D. Bai S.Q. Huang X.Y. Zhao X.Y. Yao Q. Uher C. Influence of fullerene dispersion on high temperature thermoelectric properties of BayCo4Sb12-based composites.J. Appl. Phys. 2007; 102: 103709Crossref Scopus (65) Google Scholar In addition, element volatilization and material deformation occur in many materials at high temperature, which cause considerable effects on sample geometry, density, and composition, leading to additional measurement errors. Therefore, to obtain reliable data samples homogeneity and stability should be ensured, probably by annealing materials for enough time. Repeated or cycling measurements can be carried out to check the material's stability. Furthermore, many materials have phase transitions. Commercial instruments can easily give incorrect data during the phase transition. Thus, the TE properties during phase transitions should be carefully considered and usually removed if they are measured by commercial instruments. We have summarized several key concerns about the measurement of TE properties. A few examples are given to show the extent of deviation that occurs in these TE properties by proper and improper measurements. If abnormally measured values are obtained, additional checks of original signals, raw data, measurement conditions, instrument parameters, and materials' quality is strongly recommended. Although the error of the calculated zT is very large (more than ±15%) when simply accumulating the uncertainty of each measured TE parameter, its measurement repeatability should be limited within ±5% on the same well-established instrument if these concerns are taken into account. After one obtains reliable TE properties, various analyses are performed to understand the underlying thermoelectric transports, thus to provide useful and correct information for future study.
What problem does this paper attempt to address?
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High Thermoelectric Performance of a Sc2Si2Te6 Monolayer at Medium Temperatures: an Ab Initio Study.
Wenwu Shi,Nina Ge,Sheng Yu,Jiajing Wu,Tao Hu,Jun Wei,Xiao Yan,Xinzhong Wang,Zhiguo Wang
DOI: https://doi.org/10.1039/d2cp04410b
IF: 3.3
2022-01-01
Physical Chemistry Chemical Physics
Abstract:Thermoelectric (TE) materials have attracted great attention in solving the problems in the waste heat field, while low figure of merit and poor material stability drastically limit their practical applications. In this work, a two-dimensional (2D) Sc2Si2Te6 monolayer was systematically explored as a promising TE material via ab initio methods. The results reveal that the Sc2Si2Te6 monolayer possesses an indirect band gap with a rhombohedral crystal phase and exhibits excellent dynamic stability. The lower electronic/lattice thermal conductivity and higher electron carrier mobility result in good n-type power factor parameters between 6.24 × 1010 and 1.5 × 1011 W m-1 s-1 K-2 from 300 to 700 K. Such combined merits of low thermal conductivity and high power factor parameters endow the Sc2Si2Te6 monolayer with superior thermoelectric properties with figure of merit (ZT) values of 1.41 and 3.81 at 300 K and 700 K, respectively. This study presented here can shed light on the future design of various 2D materials for thermoelectric applications.
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Machine learning for predicting ultralow thermal conductivity and high ZT in complex thermoelectric materials
Yuzhou Hao,Yuting Zuo,Jiongzhi Zheng,Wenjie Hou,Hong Gu,Xiaoying Wang,Xuejie Li,Jun Sun,Xiangdong Ding,Zhibin Gao
2024-05-21
Abstract:Efficient and precise calculations of thermal transport properties and figure of merit, alongside a deep comprehension of thermal transport mechanisms, are essential for the practical utilization of advanced thermoelectric materials. In this study, we explore the microscopic processes governing thermal transport in the distinguished crystalline material Tl$_9$SbTe$_6$ by integrating a unified thermal transport theory with machine learning-assisted self-consistent phonon calculations. Leveraging machine learning potentials, we expedite the analysis of phonon energy shifts, higher-order scattering mechanisms, and thermal conductivity arising from various contributing factors like population and coherence channels. Our finding unveils an exceptionally low thermal conductivity of 0.31 W m$^{-1}$ K$^{-1}$ at room temperature, a result that closely correlates with experimental observations. Notably, we observe that the off-diagonal terms of heat flux operators play a significant role in shaping the overall lattice thermal conductivity of Tl$_9$SbTe$_6$, where the ultralow thermal conductivity resembles that of glass due to limited group velocities. Furthermore, we achieve a maximum $ZT$ value of 3.17 in the $c$-axis orientation for \textit{p}-type Tl$_9$SbTe$_6$ at 600 K, and an optimal $ZT$ value of 2.26 in the $a$-axis and $b$-axis direction for \textit{n}-type Tl$_9$SbTe$_6$ at 500 K. The crystalline Tl$_9$SbTe$_6$ not only showcases remarkable thermal insulation but also demonstrates impressive electrical properties owing to the dual-degeneracy phenomenon within its valence band. These results not only elucidate the underlying reasons for the exceptional thermoelectric performance of Tl$_9$SbTe$_6$ but also suggest potential avenues for further experimental exploration.
Materials Science
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Recent advances in high-performance bulk thermoelectric materials
X. Shi,L. Chen,C. Uher
DOI: https://doi.org/10.1080/09506608.2016.1183075
2016-05-31
International Materials Reviews
Abstract:Thermoelectric (TE) materials facilitate direct heat-to-electricity conversion. The performance of a TE material is characterised by its figure of merit zT (=S2 σT/κ) that depends on both electronic transport properties, i.e. the Seebeck coefficient S and the electrical conductivity σ, and on thermal transport properties, i.e. the thermal conductivity κ of a material. The intrinsically counter-correlated behaviour between electronic and thermal transport properties makes the enhancement of zT a very challenging task. In the past 10 years, the zTs in bulk TE materials have been significantly enhanced due to intensive exploratory efforts, the discovery of new physical phenomena and effects, and applications of advanced synthesis methods. In this review, we summarise the recent progress in bulk TE materials. After the introduction of fundamental principles of thermoelectricity, the recently achieved enhancements in the TE performance encompassing the use of electronic band structure engineering, lattice phonon engineering and nanostructure tailoring will be emphasised. Next, the highlights of typical TE materials will be presented, focusing especially on the great progress achieved during the past decade. Finally, new techniques and approaches developed to fabricate TE materials will be outlined and their impact on the performance and economic viability of large-scale TE applications will be considered. The progress made during the past dozen or so years provides great opportunities for the use of bulk TE materials in a much broader range of applications and bodes well for a more efficient utilisation of energy.
materials science, multidisciplinary
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Intrinsic Conductivity As an Indicator for Better Thermoelectrics
Chaoliang Hu,Ziheng Gao,Min Zhang,Shen Han,Chenguang Fu,Tiejun Zhu
DOI: https://doi.org/10.1039/d3ee02167j
IF: 32.5
2023-01-01
Energy & Environmental Science
Abstract:The search for high-performance thermoelectric (TE) materials has long been a focused theme. Herein, the intrinsic conductivity sigma 0 is proposed as a simple indicator to evaluate the intrinsic electrical performance of potential TE materials and instruct the exploration of better thermoelectrics. Under the framework of a single parabolic band (SPB) model, sigma 0 is proved exactly to be the electrical conductivity of a TE material when its power factor (PF) reaches the maximum value. Moreover, a simplified SPB model is developed, with which simpler mathematical equations can be employed for instructing the optimization of the TE performance, enabling the rapid screening and development of new TE materials. The upper limit of the dimensionless TE figure of merit zT at different temperatures can be easily predicted. Further beyond, with the aim to enhance sigma 0, carrier selective scattering engineering is theoretically proposed, with which sigma 0 and PFmax could possibly be significantly improved via the selective scattering of low-energy carriers. The experimental routes to realize the carrier selective scattering are also suggested. Finally, a roadmap towards higher sigma 0 and zT is summarized, which could provide an insightful understanding and instruction for the future development of thermoelectrics. The intrinsic conductivity sigma 0 is proposed as a simple indicator to evaluate the intrinsic electrical performance of thermoelectric materials, which could instruct the exploration of better thermoelectrics.
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Self-contained calibration samples and measurements of the thermoelectric figure of merit: A method to improve accuracy
D. Vasilevskiy,S. Turenne,R. A. Masut
DOI: https://doi.org/10.1063/5.0200082
IF: 2.877
2024-03-15
Journal of Applied Physics
Abstract:Despite more than seven decades of active research and development in thermoelectricity, the accurate measurement of the thermoelectric (TE) properties of bulk materials has remained a challenge, mainly because of the strong interrelation between thermal and electrical phenomena. This work highlights practical advancements in methods and instrumentation dedicated to the simultaneous measurements of TE properties such as the Seebeck coefficient (S), the thermal (κ), and electrical (σ) conductivities and the dimensionless TE figure of merit ZT = S2σT/κ. The accuracy of a Harman based approach, as implemented by the ZT-Scanner (TEMTE Inc.), applicable to the simultaneous measurement of the above TE properties, has been made possible by a self-contained calibration procedure, which is based on the availability of two samples of the same homogeneous material having different shape factors. It is of practical importance that this approach provides a simple procedure to obtain the calibration for the figure of merit ZT and the thermal conductivity in the temperature interval from 300 to 720 K. In addition, we show that a simplified Harman setup with no thermocouples attached to the sample can also be used for self-contained calibrated ZT measurements. It is concluded that the implemented steady-state approach decreases the relative error down to 1%–2% for ZT measurements and can be recommended for most applications not involving dynamical behavior. In particular, it is proposed that self-generated calibration samples can critically increase the quality and ease of comparison of TE measurements if they are adopted by the TE community.
physics, applied
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Thermoelectric Device Performance Beyond Average ZT: Holistic Consideration of Materials and Design
Jing Cao,Xian Yi Tan,Jinfeng Dong,Hongfei Liu,Yun Zheng,Qiang Zhu,Jianwei Xu,Gang Zhang,Jing Wu,Ady Suwardi
DOI: https://doi.org/10.1016/j.mtphys.2023.101071
IF: 11.021
2023-04-02
Materials Today Physics
Abstract:In the current era where many renewable energy technologies are commercially mature and optimized, thermoelectrics remain relatively under-utilized. This can be partly attributed to their limited device efficiencies despite their high materials performances. On the materials level, the performance of thermoelectrics can be defined by zT or average zT , which is directly correlated to device power conversion efficiency. Due to this direct correlation, it is a longstanding assumption that maximizing average zT will result in higher efficiency. Although this practice holds true for many cases, it does not provide a complete picture due to the complex interplay between electronic and thermal transport properties. In this work, we surveyed the literature to find that high average zT does not always translate to high efficiency. Instead, it was found that compatibility factor, which dictates the optimal ratio of electrical and heat current passing through the material, is equally important in determining the device efficiency. Other factors such as electrical and thermal impedance matching, as well as contact resistance are also discussed. This review concludes with food for thought on future thermoelectric research beyond average zT to realize the untapped potential in this special class of materials.
materials science, multidisciplinary,physics, applied
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Band Modulation and Strain Fluctuation for Realizing High Average zT in GeTe
Xinyu Wang,Honghao Yao,Li Yin,Wenhua Xue,Zongwei Zhang,Sichen Duan,Lingjin Chen,Chen Chen,Jiehe Sui,Xingjun Liu,Yumei Wang,Jun Mao,Qian Zhang,Xi Lin
DOI: https://doi.org/10.1002/aenm.202201043
IF: 27.8
2022-06-03
Advanced Energy Materials
Abstract:PbTe and AgSbTe2 are chosen to form a solid solution with GeTe, and a high zT of ≈0.7 at 323 K and ≈2.4 at 723 K can be achieved in (Pb0.15Ge0.85Te)0.8(AgSbTe2)0.2, leading to a record‐high average zT of ≈1.8 and a high conversion efficiency of ≈14.8% under the temperature difference of 500 K. Recently, GeTe has emerged as a very promising thermoelectric material. However, the pristine GeTe exhibits intrinsically low Seebeck coefficient and high thermal conductivity. Therefore, resolving these issues is critical for further promoting its thermoelectric performance. Herein, PbTe and AgSbTe2 are chosen to form a solid solution with GeTe. Benefitting from the converged electronic bands and reduced thermal conductivity after AgSbTe2 alloying, the thermoelectric performance of GeTe‐based materials is effectively improved. In addition, PbTe alloying can optimize the carrier concentration and further improve the effective mass, and thus a remarkable enhancement in the Seebeck coefficient is realized. Moreover, intense phonon scattering occurs due to the introduced point defects at the Ge site, and the lattice thermal conductivity is effectively reduced to be as low as ≈0.47 W m−1 K−1. As a result, a high zT of ≈0.7 at 323 K and ≈2.4 at 723 K can be achieved in (Pb0.15Ge0.85Te)0.8(AgSbTe2)0.2, leading to a record‐high average zT of ≈1.8 and a high conversion efficiency of ≈14.8% under the temperature difference of 500 K.
materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,energy & fuels
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A sketch for super-thermoelectric materials
Shizhen Zhi,Jucai Jia,Qian Zhang,Feng Cao,Xingjun Liu,Jun Mao
DOI: https://doi.org/10.1016/j.mtphys.2022.100618
IF: 11.021
2022-01-01
Materials Today Physics
Abstract:Improving the dimensionless figure of merit (zT) is the everlasting goal for thermoelectrics. With the discovery of super-thermoelectric materials, which exhibit much higher zTs (arbitrarily say, zT > 5) than that of the traditional materials, it is possible to dramatically alter the landscape of the thermoelectric applications. Identifying super-thermoelectric materials is extremely challenging based on the current understanding of electron and phonon transport. It is interesting to wonder if it is possible to predict how the super-thermoelectric material might look like before it has been discovered. Herein, band modeling on the thermoelectric properties is conducted. It is concluded that super-thermoelectric materials should have a much lower optimal carrier concentration than the “golden carrier concentration” (in the range between 1019 and 1020 cm−3). In addition, the super-thermoelectric materials should also have a much larger optimal Seebeck coefficient than that of the existing materials (∼200 μV K−1). Based on these predictions, potential issues i.e., on the development of super-thermoelectric materials are discussed. Finally, predictions on the super-thermoelectrics beyond the band modeling are also briefly discussed.
materials science, multidisciplinary,physics, applied
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Giant Seebeck Coefficient Decrease in Polycrystalline Materials with Highly Anisotropic Band Structures: Implications in Seeking High-Quality Thermoelectric Materials
J. -J. Gu,D. Zhang,Q. X. Guo
DOI: https://doi.org/10.1016/j.ssc.2008.07.026
IF: 1.934
2008-01-01
Solid State Communications
Abstract:Present physical laws do not deny the existence of high-quality thermoelectric (TE) materials (with ZT>3–4 or even more). But despite a fifty-year study, most of the known matters show ultra low heat-electricity conversion abilities (with ZT lower than 1). In this work, we take a canceling out of a Seebeck coefficient (thermopower, S) of inner grains in some polycrystalline materials with highly anisotropic band structures, as one of the clues to the above contradiction. We show that an S could be drastically decreased about several hundred times (or even more) in some polycrystalline materials, compared to their single crystalline counterparts. These polycrystals can thus show low-estimated ZT (proportional to S2), and should be re-examined in their single crystalline forms. Moreover, we also point out that the absence of a conductivity effective mass database at present means that there are blind spots in understanding and predicting some semiconductors’ orientation-dependent transport properties.
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Thermodynamic Routes to Ultralow Thermal Conductivity and High Thermoelectric Performance
Pai-Chun Wei,Chien-Neng Liao,Hsin-Jay Wu,Dongwang Yang,Jian He,Gill V Biesold-McGee,Shuang Liang,Wan-Ting Yen,Xinfeng Tang,Jien-Wei Yeh,Zhiqun Lin,Jr-Hau He
DOI: https://doi.org/10.1002/adma.201906457
Abstract:Thermoelectric (TE) research is not only a course of materials by discovery but also a seedbed of novel concepts and methodologies. Herein, the focus is on recent advances in three emerging paradigms: entropy engineering, phase-boundary mapping, and liquid-like TE materials in the context of thermodynamic routes. Specifically, entropy engineering is underpinned by the core effects of high-entropy alloys; the extended solubility limit, the tendency to form a high-symmetry crystal structure, severe lattice distortions, and sluggish diffusion processes afford large phase space for performance optimization, high electronic-band degeneracy, rich multiscale microstructures, and low lattice thermal conductivity toward higher-performance TE materials. Entropy engineering is successfully implemented in half-Huesler and IV-VI compounds. In Zintl phases and skutterudites, the efficacy of phase-boundary mapping is demonstrated through unraveling the profound relations among chemical compositions, mutual solubilities of constituent elements, phase instability, microstructures, and resulting TE properties at the operation temperatures. Attention is also given to liquid-like TE materials that exhibit lattice thermal conductivity at lower than the amorphous limit due to intensive mobile ion disorder and reduced vibrational entropy. To conclude, an outlook on the development of next-generation TE materials in line with these thermodynamic routes is given.
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Realizing zT Values of 2.0 in Cubic GeTe
Jing Cao,Sheau Wei Chien,Xian Yi Tan,Chee Kiang Ivan Tan,Qiang Zhu,Jing Wu,Xizu Wang,Yunshan Zhao,Le Yang,Qingyu Yan,Hongfei Liu,Jianwei Xu,Ady Suwardi
DOI: https://doi.org/10.1002/cnma.202100033
IF: 3.82
2021-02-18
ChemNanoMat
Abstract:<p>Over the past two years, GeTe has quickly cemented its place as the best performing thermoelectric material at a medium temperature range. The key factors behind the extraordinary performance lie in its favourable electronic and thermal properties, which arise from its unique crystal structure. The slight rhombohedral distortion at temperatures below 700 K results in lower lattice thermal conductivity while maintaining high electronic properties via high level of band‐convergence. In addition, while GeTe has a cubic structure above 700 K, the local atomic disorder persists, which maintains its low thermal conductivity. To date, the understanding of the temperature‐dependent thermoelectric properties of cubic GeTe at room temperature and above is very limited. This is due to the difficulties in stabilizing cubic GeTe at low temperatures. In this work, we leverage on low level of Ti doping to stabilize cubic‐phase GeTe at room temperature and elucidate its temperature‐dependent electronic and thermal properties. Further doping with In, Cu, Sb, and Pb results in zT as high as 2 at 773 K, and high average zT of 1.4 between 300 and 800 K.</p>
materials science, multidisciplinary,nanoscience & nanotechnology,chemistry
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Measurement of non-equilibrium characteristics of thermoelectric materials
Quan Liu,Tao Huang,Xu Chen,Siyong Gu,Tongtong Duan,Mi Lu,Jianping Lin
DOI: https://doi.org/10.1016/j.jmrt.2023.12.161
IF: 6.267
2023-12-29
Journal of Materials Research and Technology
Abstract:The study of material properties relies on accurate and reliable testing instruments. Sensitively capturing changes in material performance is key to understanding the mechanisms of material properties. The Seebeck coefficient and resistivity testing instrument are essential for research on many functional materials. However, the current instrument is limited in its ability to capture sensitive changes due to testing principles. Here, we prepared three different types of non-equilibrium Zn 4 Sb 3 . We found that the existing static testing instrument has problems with testing interruption or inaccuracy when the sample undergoes chemical reactions, rapid atomic diffusion, or phase transitions. The cause of interruption is that the temperature control setting cannot meet the accuracy requirements of the testing instrument. The instrument's large temperature difference setting will cause the determination of the phase transition temperature to become inaccurate. To address the limitations, we have developed a dynamic testing instrument and tested the Seebeck coefficient and resistivity of Zn 4 Sb 3 and Ni in the range of 300 K–800 K. By ensuring the accuracy of each module of the instrument, optimizing the alternating temperature rise time, and improving the data acquisition calculation method, we have achieved accurate capture of sensitive performance changes in the non-equilibrium sample. Comparatively, dynamic testing reduces the measurement time by approximately 300 % compared to static testing. The standard deviation of measured Seebeck coefficient and resistivity is less than ±4 %. This study demonstrates that dynamic testing of the Seebeck coefficient and resistivity is an effective strategy for measuring non-equilibrium functional materials.
materials science, multidisciplinary,metallurgy & metallurgical engineering
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Progress in measurement of thermoelectric properties of micro/nano thermoelectric materials: A critical review
Xiao Yang,Chunyang Wang,Rui Lu,Yanan Shen,Haibo Zhao,Jian Li,Ruiyi Li,Lixin Zhang,Haisheng Chen,Ting Zhang,Xinghua Zheng
DOI: https://doi.org/10.1016/j.nanoen.2022.107553
IF: 17.6
2022-10-01
Nano Energy
Abstract:Thermoelectric materials have attracted extensive attentions due to their extensive applications in thermoelectric refrigeration, waste heat recovery, aerospace and other fields. The effective improvement of thermoelectric properties of thermoelectric materials is of far-reaching significance to broaden their applications. One of the important methods is to improve thermoelectric performance by low dimension and nano-crystallization. Even though small-scale measurement is difficult to conduct, it is very important to accurately measure the thermoelectric properties for micro/nano thermoelectric materials. At present, different methods are used to measure the thermal and electrical parameters. However, using different methods to measure thermoelectric parameters will make measurement error transmission, resulting in large final ZT error. Moreover, transferring samples multiple times during separate measurements for different physical properties can result in impaired surface appearance of microscale samples, thus affecting their intrinsic physical properties. In addition, due to the remarkable difference between the individual samples, it is better to measure all the properties from the same individual sample. Therefore, it is necessary to study the in-suit integrated measurement method. This review summarizes the measurement methods of thermoelectric properties of micro/nano thermoelectric materials, including thermal conductivity, Seebeck coefficient and electrical conductivity. The existing integrated measurement methods of thermoelectric properties for part of micro/nano thermoelectric materials are also summarized. Finally, the difficulties of the integrated measurement methods are proposed and some strategies of the integrated measurement methods which are suitable for one-dimensional nanotubes and two-dimensional films are also prospected.
materials science, multidisciplinary,chemistry, physical,physics, applied,nanoscience & nanotechnology
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Compromise and Synergy in High-Efficiency Thermoelectric Materials.
Tiejun Zhu,Yintu Liu,Chenguang Fu,Joseph P Heremans,Jeffrey G Snyder,Xinbing Zhao
DOI: https://doi.org/10.1002/adma.201605884
IF: 29.4
2017-01-01
Advanced Materials
Abstract:The past two decades have witnessed the rapid growth of thermoelectric (TE) research. Novel concepts and paradigms are described here that have emerged, targeting superior TE materials and higher TE performance. These superior aspects include band convergence, "phonon-glass electron-crystal", multiscale phonon scattering, resonant states, anharmonicity, etc. Based on these concepts, some new TE materials with distinct features have been identified, including solids with high band degeneracy, with cages in which atoms rattle, with nanostructures at various length scales, etc. In addition, the performance of classical materials has been improved remarkably. However, the figure of merit zT of most TE materials is still lower than 2.0, generally around 1.0, due to interrelated TE properties. In order to realize an "overall zT > 2.0," it is imperative that the interrelated properties are decoupled more thoroughly, or new degrees of freedom are added to the overall optimization problem. The electrical and thermal transport must be synergistically optimized. Here, a detailed discussion about the commonly adopted strategies to optimize individual TE properties is presented. Then, four main compromises between the TE properties are elaborated from the point of view of the underlying mechanisms and decoupling strategies. Finally, some representative systems of synergistic optimization are also presented, which can serve as references for other TE materials. In conclusion, some of the newest ideas for the future are discussed.
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Ultralow Lattice Thermal Conductivity and Superhigh Thermoelectric Figure‐of‐Merit in (Mg, Bi) Co‐Doped GeTe
Tong Xing,Chenxi Zhu,Qingfeng Song,Hui Huang,Jie Xiao,Dudi Ren,Moji Shi,Pengfei Qiu,Xun Shi,Fangfang Xu,Lidong Chen
DOI: https://doi.org/10.1002/adma.202008773
IF: 29.4
2021-03-24
Advanced Materials
Abstract:High-efficiency thermoelectric (TE) technology is determined by the performance of TE materials. Doping is a routine approach in TEs to achieve optimized electrical properties and lowered thermal conductivity. However, how to choose appropriate dopants with desirable solution content to realize high TE figure-of-merit (zT) is very tough work. In this study, via the use of large mass and strain field fluctuations as indicators for low lattice thermal conductivity, the combination of (Mg, Bi) in GeTe is screened as very effective dopants for potentially high zTs. In experiments, a series of (Mg, Bi) co-doped GeTe compounds are prepared and the electrical and thermal transport properties are systematically investigated. Ultralow lattice thermal conductivity, about 0.3 W m<sup>-1</sup> K<sup>-1</sup> at 600 K, is obtained in Ge<sub>0.9</sub> Mg<sub>0.04</sub> Bi<sub>0.06</sub> Te due to the introduced large mass and strain field fluctuations by (Mg, Bi) co-doping. In addition, (Mg, Bi) co-doping can introduce extra electrons for optimal carrier concentration and diminish the energy offset at the top of the valence band for high density-of-states effective mass. Via these synthetic effects, a superhigh zT of ≈2.5 at 700 K is achieved for Ge<sub>0.9</sub> Mg<sub>0.04</sub> Bi<sub>0.06</sub> Te. This study sheds light on the rational design of effective dopants in other TE materials.
materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
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Compromise and Synergy in High‐Efficiency Thermoelectric Materials
Zhu Tao,Yintu Liu,Chenguang Fu,Joseph P. Heremans,G. Jeffrey Snyder,Xinbing Zhao
DOI: https://doi.org/10.1002/adma.201605884
IF: 29.4
2017-01-01
Advanced Materials
Abstract:The past two decades have witnessed the rapid growth of thermoelectric (TE) research. Novel concepts and paradigms are described here that have emerged, targeting superior TE materials and higher TE performance. These superior aspects include band convergence, "phonon-glass electron-crystal", multiscale phonon scattering, resonant states, anharmonicity, etc. Based on these concepts, some new TE materials with distinct features have been identified, including solids with high band degeneracy, with cages in which atoms rattle, with nanostructures at various length scales, etc. In addition, the performance of classical materials has been improved remarkably. However, the figure of merit zT of most TE materials is still lower than 2.0, generally around 1.0, due to interrelated TE properties. In order to realize an "overall zT > 2.0," it is imperative that the interrelated properties are decoupled more thoroughly, or new degrees of freedom are added to the overall optimization problem. The electrical and thermal transport must be synergistically optimized. Here, a detailed discussion about the commonly adopted strategies to optimize individual TE properties is presented. Then, four main compromises between the TE properties are elaborated from the point of view of the underlying mechanisms and decoupling strategies. Finally, some representative systems of synergistic optimization are also presented, which can serve as references for other TE materials. In conclusion, some of the newest ideas for the future are discussed.
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Novel principle for characterizing the material-level parameters of a thermoelectric generator module
Hailong He,Yabo Zhao,Hongrui Ren,Chunping Niu,Zhenxuan Fang,Yi Wu,Mingzhe Rong
DOI: https://doi.org/10.1016/j.applthermaleng.2022.118900
IF: 6.4
2022-10-01
Applied Thermal Engineering
Abstract:Accurate characterization of all the three material-level parameters, i.e., thermal conductivity, Seebeck coefficient and electrical resistivity, is a premise for performance evaluation or degradation analysis of both the lab-made and commercial thermoelectric generator (TEG) modules. The recently reported quasi-steady-state (QSS) method can directly derive all the three temperature-dependent parameters through in situ TEG module characterization but shows a poor efficiency. This paper presents a modified QSS method based on stepped temperature rise for a high implementation efficiency. Both the optimal ‘width’ and ‘height’ of each step are elaborately specified. Its feasibility is then validated using a high-fidelity transient TEG model, which considers all the related effects and key irreversible factors. According to the simulations, the modified method has a 108 times higher efficiency than that of the original QSS method. Finally, the practicality of this modified method is explored by tests, which shows a consistent accuracy compared to the original method. Therefore, the modified QSS method is more practical, because it can greatly improve the efficiency on the premise of ensuring the accuracy with its similarity to the original QSS method. All the principle, method and conclusions can assist TEG performance estimation and guide the design of large-scale power systems.
energy & fuels,engineering, mechanical,thermodynamics,mechanics
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Defect Engineering Stabilized AgSbTe2 with High Thermoelectric Performance
Yu Zhang,Zhi Li,Saurabh Singh,Amin Nozariasbmarz,Wenjie Li,Aziz Genç,Yi Xia,Luyao Zheng,Seng Huat Lee,Sumanta Kumar Karan,Na Liu,Sanghadasa Mf Mohan,Zhiqiang Mao,Andreu Cabot,Christopher Wolverton,Bed Poudel,Shashank Priya,Gagan Goyal
DOI: https://doi.org/10.1002/adma.202208994
IF: 29.4
2022-12-26
Advanced Materials
Abstract:Thermoelectric (TE) generators enable the direct and reversible conversion between heat and electricity, providing applications in both refrigeration and power generation. The grand challenge in the field is related to the low conversion efficiency of TE devices. In the last decade, several TE materials with relatively high figures of merit (zT) have been reported in low‐ and high‐temperature regimes. However, there is an urgent demand for high‐performance TE materials working in the mid‐temperature range (400‐700 K). Herein, p‐type AgSbTe2 materials stabilized with S and Se co‐doping are demonstrated to exhibit an outstanding maximum figure of merit (zTmax) of 2.3 at 673 K and an average figure of merit (zTave) of 1.59 over the wide temperature range of 300 – 673 K. This exceptional performance arises from an enhanced carrier density resulting from a higher concentration of silver vacancies, a vastly improved Seebeck coefficient enabled by the flattening of the valence band maximum and the inhibited formation of n‐type Ag2Te, and a highly improved stability beyond 673 K. The optimized material is used to fabricate a single‐leg device with efficiencies of up to 13.3% and an unicouple TE device reaching energy conversion efficiencies up to 12.3% at a temperature difference of 370 K. These results highlight an effective strategy to engineer high‐performance TE material for cost‐effective waste heat recovery in the mid‐temperature range. This article is protected by copyright. All rights reserved
materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
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Band Modulation and Strain Fluctuation for Realizing High Average <i>zT</i> in GeTe
Xinyu Wang,Honghao Yao,Li Yin,Wenhua Xue,Zongwei Zhang,Sichen Duan,Lingjin Chen,Chen Chen,Jiehe Sui,Xingjun Liu,Yumei Wang,Jun Mao,Qian Zhang,Xi Lin
DOI: https://doi.org/10.1002/aenm.202201043
IF: 27.8
2022-01-01
Advanced Energy Materials
Abstract:Recently, GeTe has emerged as a very promising thermoelectric material. However, the pristine GeTe exhibits intrinsically low Seebeck coefficient and high thermal conductivity. Therefore, resolving these issues is critical for further promoting its thermoelectric performance. Herein, PbTe and AgSbTe2 are chosen to form a solid solution with GeTe. Benefitting from the converged electronic bands and reduced thermal conductivity after AgSbTe2 alloying, the thermoelectric performance of GeTe-based materials is effectively improved. In addition, PbTe alloying can optimize the carrier concentration and further improve the effective mass, and thus a remarkable enhancement in the Seebeck coefficient is realized. Moreover, intense phonon scattering occurs due to the introduced point defects at the Ge site, and the lattice thermal conductivity is effectively reduced to be as low as approximate to 0.47 W m(-1) K-1. As a result, a high zT of approximate to 0.7 at 323 K and approximate to 2.4 at 723 K can be achieved in (Pb0.15Ge0.85Te)(0.8)(AgSbTe2)(0.2), leading to a record-high average zT of approximate to 1.8 and a high conversion efficiency of approximate to 14.8% under the temperature difference of 500 K.