Abstract:Electrical and thermal transport in silicon germanium superlattice nanostructures has received extensive attention from scientists for understanding carrier properties at the nanoscale, and the figure-of-merit (ZT) reported in such structures has inspired engineers to develop cost-effective waste heat recovery systems. In this paper, the thermoelectric transport properties of the silicon-based superlattice- and anti-superlattice-nanocrystalline heterostructures are systematically studied by first-principles and molecular dynamics simulations combined with the Boltzmann transport theory. The thermal conductivity, which is thought to be the essential bottleneck for bulk crystalline Si to gain a high ZT value, of such structures is found to be reduced by two orders of magnitude and reaches a level far below the amorphous limit of Si. This is achieved due to the extremely strong phonon-boundary scattering at both grain boundaries and Si-Ge interfaces, which will lead to the phonon mean free path being much smaller than the grain size (Casmir limit): for instance, the dominant phonons are in range of 0.5 to 3 nm for the heterostructures with a grain size of around 8 nm. Meanwhile, the power factor can be preserved at the level comparable to bulk crystalline because of the quantum confinement effect, which resulted from the conduction band minima converge, reduction of band gap, and the short mean free path of carriers. As a result, the ZT of such superlattice based nanomembranes can reach around 0.3 at room temperature, which is two orders of magnitude higher than the bulk crystalline case. The corresponding bulk superlattice-nanocrystalline heterostructures possess a ZT value of 0.5 at room temperature, which is superior to all other bulk silicon-based thermoelectrics. Our results here show that nanostructuring the superlattice structure can further decrease the thermal conductivity while keeping the electrical transport properties at the bulk comparable level, and provides a new strategy for enhancing the thermoelectric performance of the silicon-based nanostructures.

A sketch for super-thermoelectric materials

High Thermoelectric Performance of a Sc2Si2Te6 Monolayer at Medium Temperatures: an Ab Initio Study.

Enhanced Thermoelectric Performance in Three-Dimensional Superlattice of Topological Insulator Thin Films

High ZT 2D Thermoelectrics by Design: Strong Interlayer Vibration and Complete Band‐Extrema Alignment

Machine learning for predicting ultralow thermal conductivity and high ZT in complex thermoelectric materials

Thermoelectric Figure of Merit of a Superatomic Crystal Re6Se8I2 Monolayer

High-performance Nanostructured Thermoelectric Materials

Promising Materials for Thermoelectric Applications

Intrinsic Conductivity As an Indicator for Better Thermoelectrics

Distinctive Thermoelectric Properties of Supersaturated Si-Ge-P Compounds: Achieving Figure of Merit ZT > 3.6

Multiple Valence Bands Convergence and Localized Lattice Engineering Lead to Superhigh Thermoelectric Figure of Merit in MnTe

First-principles and Molecular Dynamics Study of Thermoelectric Transport Properties of N-type Silicon-Based Superlattice-Nanocrystalline Heterostructures

Engineering of charge carriers via a two-dimensional heterostructure to enhance the thermoelectric figure of merit.

Recent advances in high-performance bulk thermoelectric materials

Realizing High Thermoelectric Performance in GeTe‐Based Supersaturated Solid Solutions

Superhigh thermoelectric figure of merit in silver halides AgCl and AgBr from first principles

Modeling critical thermoelectric transports driven by band broadening and phonon softening

Thin-film thermoelectric devices with high room-temperature figures of merit

Novel Metal/Semiconductor Nanocomposite and Superlattice Materials and Devices for Thermoelectrics

Enhanced Thermoelectric Performance and Anomalous Seebeck Effects in Topological Insulators