The Optimization Effect of Titanium on the Phase Change Properties of SnSb4 Thin Films for Phase Change Memory Applications

Zihan Zhao,Sicong Hua,Xiao Su,Bo Shen,Sannian Song,Zhitang Song,Weihua Wu,Jiwei Zhai

DOI: https://doi.org/10.1039/d0ce00697a

IF: 3.756

2020-01-01

CrystEngComm

Abstract:Titanium-doped SnSb4 phase-change thin film has been experimentally investigated for phase-change random access memory (PCRAM) use.

What problem does this paper attempt to address?

Impact of titanium modification on the performance improvement and phase change mechanism of ZnSb thin film

Bowen Fu,Weihua Wu,Pei Zhang,Han Gu,Xiaochen Zhou,Xiaoqin Zhu,Jiwei Zhai

DOI: https://doi.org/10.1016/j.surfin.2024.105044

IF: 6.2

2024-09-05

Surfaces and Interfaces

Abstract:Phase change memory has emerged as a promising option for neuro-inspired and data-intensive AI applications, attracting significant attention from the semiconductor field recently. The performance of the device relies on the phase change material, aiming for enhanced thermal stability along with low power consumption. Nanocomposite ZnSb thin films with titanium dopant were prepared and their crystallization properties and mechanisms were investigated. Compared to pure ZnSb material, the addition of titanium can significantly enhance the temperature of crystallization and the 10-year data retention ability, both of which surpassing 16 °C. The obvious enhancement in thermal stability may be ascribed to the ionic bond formation between titanium and antimony elements, as indicated by differential charge calculations. Also, phase change memory cells with a diameter of 190 nm were fabricated using standard CMOS technology. The Ti-doped ZnSb thin film demonstrates rapid crystallization and amorphization within 50 ns while consuming low power at approximately 1.5 × 10 −10 J. The decrease in power consumption may stem from the increase in band gap energy and a decrease in electrical conductivity, as confirmed by first-principles calculations. Both experimental and theoretical results prove that titanium doping can remarkably improve the physical properties of ZnSb thin film, facilitating the exploration and design of novel phase change materials with high thermal stability, low power consumption, as well as fast switching speed.

chemistry, physical,physics, applied, condensed matter,materials science, coatings & films
Physical Properties and Structure Characteristics of Titanium-Modified Antimony-Selenium Phase Change Thin Film

Weihua Wu,Yuemei Sun,Xiaoqin Zhu,Bo Shen,Jiwei Zhai,Zhenxing Yue

DOI: https://doi.org/10.1063/5.0024839

IF: 4

2021-01-01

Applied Physics Letters

Abstract:Effects of the titanium dopant on the physical properties and structure of SbSe thin films were systematically investigated by experiments and first-principles calculations. The amorphous-to-polycrystalline transformation induced by heat was examined by in situ electrical resistance measurements. With the incorporation of titanium atoms, both the crystallization temperature and electrical resistance increase, revealing the improvement of the amorphous thermal stability and programing energy consumption. X-ray diffraction, transmission electron microscopy, and density functional theory calculations illustrate that a small amount of titanium dopant can inhibit the grain growth and refine the crystal size. The shift of Raman modes associated Sb upon the crystallization was observed. X-ray reflectivity and atomic force microscopy results prove the smaller volume fluctuation and the smoother surface morphology, meaning the better interfacial property and reliability of titanium-doped SbSe materials. Phase change memory cells based on titanium-doped antimony-selenium were fabricated to evaluate the electrical performance as well. All these results indicate that the suitable incorporation of the titanium element will be an effective method to optimize the physical properties and tune the structure of the SbSe phase change material.
Cr-doped Sb2Te materials promising for high performance phase-change random access memory

Jing Hu,Cong Lin,Liyu Peng,Tao Wei,Wanfei Li,Yun Ling,Qianqian Liu,Miao Cheng,Sannian Song,Zhitang Song,Jian Zhou,Yan Cheng,Yonghui Zheng,Zhimei Sun,Bo Liu

DOI: https://doi.org/10.1016/j.jallcom.2022.164593

IF: 6.2

2022-07-01

Journal of Alloys and Compounds

Abstract:Transition metal doping is an effective strategy to improve the properties of phase-change random access memory (PCRAM), while the underlying mechanism remains to be sufficiently investigated. Herein, a Cr-doped Sb2Te film is fabricated by co-sputtering and the enhancement mechanism of Cr-doping is deeply investigated by experiments and first-principles calculations. The CrxSb2Te film exhibits excellent performances involving high crystallization temperature (238.9 °C) and good data retention (10 years @161.7 °C) for Cr0.56Sb2Te, low density change rate (3.8%) and high reversible switching speed (5 ns) for Cr0.29Sb2Te, providing a variety of options for different applications. The calculated results show that Cr atoms preferentially substitute the Sb1 site and the CrTe bonds display a stronger ionic bond character in contrast to the covalent bonded SbTe, thus improving the crystalline phase stability and crystallization temperature. Moreover, ab initio molecular dynamics simulations demonstrate that in the amorphous phase Cr atoms locate in defective octahedral coordination. Meanwhile, the homopolar SbSb wrong bond increased with Cr doping and the Cr atoms tend to form tight cluster in the amorphous phase which could benefit for the fast phase-change speed. Our present findings of Cr0.29Sb2Te PCRAM device clearly reveal the enhancement mechanism by Cr doping which provides guidance for developing high-performance PCRAM devices.

materials science, multidisciplinary,chemistry, physical,metallurgy & metallurgical engineering
Improvement of phase change behavior in titanium-doped Ge2Sb2Te5 films

Zhang Ying,Wei Shen-Jin,Yi Xin-Yu,Cheng Shuai,Chen Kun,Zhu Huan-Feng,Li Jing,Lv Lei

DOI: https://doi.org/10.11972/j.issn.1001-9014.2015.06.004

2015-01-01

JOURNAL OF INFRARED AND MILLIMETER WAVES

Abstract:The influence of Ti dopant in the titanium-doped Ge2Sb2Te5 film upon its optical and structural characteristics has been investigated by spectroscopic ellipsometry and x-ray diffraction. Temperature-dependent resistance tests have further revealed that Ti-doped Ge2Sb2Te5 films have better thermal stability than undoped one. Based on the Arrhenius extrapolation results from data retention tests, the endurance temperature corresponding to 10-year data retention of a Ti-doped Ge2Sb2Te5 cell is higher than that of a common Ge2Sb2Te5 cell without dopant. All these experimental results have confirmed that the Ti-doped Ge2Sb2Te5 films are more suitable for the application in phase-change random access memory.
Performance optimization of Sn15Sb85 phase change material via introducing multilayer structure

Xiaochen Zhou,Weihua Wu,Han Gu,Pei Zhang,Bowen Fu,Xiaoqin Zhu,Jiwei Zhai

DOI: https://doi.org/10.1016/j.jallcom.2023.171794

IF: 6.2

2023-12-01

Journal of Alloys and Compounds

Abstract:The superlattice-like Sn15Sb85/Ti phase change films were fabricated by magnetron sputtering, and the effects of Ti layer on the phase change properties and crystal structure of the Sn15Sb85 films were systematically researched. With the addition of Ti layers, the crystallization temperature of the films increased, indicating their thermal stability and data retention were improved. X-ray diffraction results reflect that the presence of Ti layers restrains grain growth and refines grain size. X-ray photoelectron spectroscopy analysis reveals that the incorporation of Ti layers enhances the interatomic binding energy and improves the stability. X-ray reflectivity analysis and atomic force microscopy indicate that the Sn15Sb85/Ti films have smaller volume change and smoother surface than pure Sn15Sb85 films, implying the better interfacial property and reliability. The T-type phase change memory cell based on Sn15Sb85/Ti thin film has faster operation speed (100 ns) and lower power consumption (2.6 ×10−12 J) than the conventional Ge2Sb2Te5 material. The results show that the superlattice-like Sn15Sb85/Ti film will be a potential candidate with outstanding properties in thermostability and power consumption.

materials science, multidisciplinary,chemistry, physical,metallurgy & metallurgical engineering
Excellent thermal stability attributed to Cr dopant in Sb2Te phase change material

Cong Lin,Jing Hu,Tao Wei,Wanfei Li,Yun Ling,Qianqian Liu,Miao Cheng,Sannian Song,Zhitang Song,Yan Cheng,Yonghui Zheng,Bo Liu

DOI: https://doi.org/10.1016/j.matlet.2022.131977

IF: 3

2022-05-01

Materials Letters

Abstract:Herein, Cr was selected as the dopant to improve the performance of Sb2Te in phase change random access memory (PCRAM). The thermal properties, crystal structure and chemical bonding state of the as-prepared Cr0.39Sb2Te (CST) were investigated. The CST containing 11.5At% Cr-dopant exhibited excellent performances including high crystallization temperature (218.6℃), good data retention (10 years @136.5 ± 1.0℃) and high stability with low-density change rate (2.8%). The switching speed up to 10 ns and the endurance nearly 1 × 105 cycles were obtained for the CST based PCRAM cells. All these findings indicated that the CST material is a potential candidate for universal memory devices.

materials science, multidisciplinary,physics, applied
Characteristics of Si-doped Sb2Te3 thin films for phase-change random access memory

Y ZHANG,J FENG,Z ZHANG,B CAI,Y LIN,T TANG,B CHEN

DOI: https://doi.org/10.1016/j.apsusc.2008.03.006

IF: 6.7

2008-01-01

Applied Surface Science

Abstract:The characteristics of Si-doped Sb2Te3 thin films were investigated using differential scanning calorimetry (DSC), four-point probe technique, X-ray diffraction (XRD) analysis and high resolution transmission electron microscopy (HRTEM). It is found that the as-deposited Sb2Te3 film in our study is partly crystallized. Silicon doping increases the crystallization temperature and resistivity of Sb2Te3 film significantly. XRD and HRTEM analyses indicated that some of the doped Si atoms substitute for Sb or Te in the lattice, while others exists at the grain boundaries in the form of amorphous phase, which may be responsible for grain size reduction and high crystalline resistivity of Si-doped specimens. Compared with the conventional Ge2Sb2Te5 film, Si-doped Sb2Te3 films exhibit lower melting temperature and higher crystalline resistivity, which is beneficial to RESET current reduction of phase-change random access memory (PRAM). These results show the feasibility of Si-doped Sb2Te3 films in PRAM application.
One order of magnitude faster phase change at reduced power in Ti-Sb-Te

Min Zhu,Mengjiao Xia,Feng Rao,Xianbin Li,Liangcai Wu,Xinglong Ji,Shilong Lv,Zhitang Song,Songlin Feng,Hongbo Sun,Shengbai Zhang

DOI: https://doi.org/10.1038/ncomms5086

2014-07-08

Abstract:To date, slow Set operation speed and high Reset operation power remain to be important limitations for substituting dynamic random access memory by phase change memory. Here, we demonstrate phase change memory cell based on Ti0.4Sb2Te3 alloy, showing one order of magnitude faster Set operation speed and as low as one-fifth Reset operation power, compared with Ge2Sb2Te5-based phase change memory cell at the same size. The enhancements may be rooted in the common presence of titanium-centred octahedral motifs in both amorphous and crystalline Ti0.4Sb2Te3 phases. The essentially unchanged local structures around the titanium atoms may be responsible for the significantly improved performance, as these structures could act as nucleation centres to facilitate a swift, low-energy order-disorder transition for the rest of the Sb-centred octahedrons. Our study may provide an alternative to the development of high-speed, low-power dynamic random access memory-like phase change memory technology.
Atomic Scale Insight into the Effects of Aluminum Doped Sb2Te for Phase Change Memory Application

Yong Wang,Tianbo Wang,Yonghui Zheng,Guangyu Liu,Tao Li,Shilong Lv,Wenxiong Song,Sannian Song,Yan Cheng,Kun Ren,Zhitang Song

DOI: https://doi.org/10.1038/s41598-018-33421-y

IF: 4.6

2018-01-01

Scientific Reports

Abstract:To date, the unpleasant trade-off between crystallization speed and thermal stability for most phase change materials is detrimental to achieve phase change memory (PCM) with both features of high-speed and good-retention. However, it is proved that Al doping in Sb2Te, served as storage media in PCM, favors both a high writing speed (6 ns) and a good retention (103 °C), as well as a low power consumption. Judging by experimental and theoretical investigations, doped Al atoms prefer to replace Sb in Sb2Te lattice, strongly bonded with 6 Te atoms, to form a homogeneous phase. While in amorphous Al doped Sb2Te (AST), Al atoms are in tetrahedral environment, firmly bonded with four Sb/Te atoms. The strong bonding in Al centered tetrahedron in amorphous AST can obstruct the collective motion of Sb atoms near the matrix boundary, leading to the improvement in thermal stability and the confinement in grain size.
Co-doping: An effective strategy for developing stable and high-speed Sb2Te-based phase-change memory

Jing Hu,Cong Lin,Yan Cheng,Yonghui Zheng,Tao Wei,Wanfei Li,Yun Ling,Qianqian Liu,Miao Cheng,Ruirui Wang,Sannian Song,Zhitang Song,Yinghui Wei,Bo Liu

DOI: https://doi.org/10.1063/5.0146349

IF: 4

2023-05-29

Applied Physics Letters

Abstract:Balancing operation speed and thermal stability is a big challenge in phase change memory (PCM). In this work, a carbon (C) and chromium (Cr) co-doped Sb2Te strategy has been proposed for achieving high operation speed and high stability in PCM applications. In general, doping with the appropriate Cr element is beneficial to improve thermal stability, but it will sacrifice its operation speed. C-doping can enhance thermal stability and retain its fast phase transition properties due to the carbon elements tend to form agglomerates in the host that ameliorate disorder of the amorphous phase without loss of the phase transition rate. Intriguingly, the as-prepared C1.19Cr0.23Sb2Te material exhibits good data retention (T10-year @ 155.0 °C) and low-volume change rate (1.8%), as well as fast switching speed (4 ns) and good endurance (>1 × 105 cycles). This research indicates that C and Cr co-doping is an effective method to achieve excellent stability of phase-change materials without sacrificing the phase-transition rate of Sb2Te materials.

physics, applied
Nano-composite phase-change antimony thin film for fast and persistent memory operations

Yimin Chen,Bin Chen,Lei Sun,Wenhao Leng,Yingjie Meng,Chenjie Gu,Yuanlin Chen,Tao Song,Jiaen Huang,Junqiang Wang,Guoxiang Wang,Xiang Shen,Feng Rao

DOI: https://doi.org/10.1016/j.mtphys.2021.100584

IF: 11.021

2022-01-01

Materials Today Physics

Abstract:Elemental Sb phase-change material (PCM) has to be diminished to nanometer in thickness to guarantee non-volatile memory storage. Integrating ultrathin Sb films poses great challenges in manufacturing high-density phase-change random-access memory (PCRAM) chips. Here, we introduce another feasible approach of utilizing nano-composite Sb–SiO2 PCM, for which we demonstrate superior phase-change properties of faster crystallization speed and better data retention ability over the conventional Ge2Sb2Te5 compound. These two seemingly conflicting features of the Sb–SiO2 are reconciled by an obvious fragile-to-strong crossover in crystallization kinetics of the supercooled Sb liquids via nanosize confinements, enabling the more suffocated atomic diffusion near room temperature and the comparable crystal growth at elevated temperatures to the Ge2Sb2Te5. The nanosize confinements also catalyze heterogeneous nucleation remarkably, therefore speeding up the SET operation of the Sb–SiO2-based PCRAM device by over two orders of magnitude as compared to the Ge2Sb2Te5-based one. In addition, owning the potentials to accomplish low-drift and long-life memory programming, the nano-composite Sb–SiO2 PCMs hold great promise to be employed for working memory and neuromorphic computing applications.

materials science, multidisciplinary,physics, applied
Study of Si-Doped Sb2te3 Films for Phase Change Memory

Zhang Zu-Fa,Zhang Yin,Feng Jie,Cai Yan-Fei,Lin Yin-Yin,Cai Bing-Chu,Tang Ting-Ao,Bomy Chen

DOI: https://doi.org/10.7498/aps.56.4224

2007-01-01

Abstract:Silicon doped Sb2Te3 films were deposited by three target (Si, Sb and Te) co-sputtering. For comparison, Ge2Sb2Te5 and Sb2Te3 films were also prepared. Memory cells (pore size=10 μm×10 μm) were fabricated by micro-fabrication to further study their storage performance. Results indicate that silicon doping increases the crystallization temperature. Meanwhile, silicon doping drastically enhances the resistivity ratio (high resistance state/low resistance state) to 106 by increasing both amorphous resistivity and crystal resistivity so as to further increasing the ON/OFF ratio of memory cell. Compared with Ge2Sb2Te5 film, 16at%Si-Sb2Te3 film has a higher crystalline resistivity and lower melting temperature, which are helpful to the reduction of RESET current. Memory cell with silicon doped Sb2Te3 film poccesses memory storage characteristics, and it can be reversibly switched between the high resistance state (RESET status) and the low resistance state (SET status). The SET status can be triggered by electrical pulse of 3V, 500ns and it comes back to the RESET status when 4V, 20ns pulse is applied, while Ge2Sb2Te5 cells, with the same structure can't be switched back to RESET state.
Influence of samarium modification on the phase-change performance and phase structure of tin antimonide

Pei Zhang,Weihua Wu,Bowen Fu,Han Gu,Xiaochen Zhou,Xiaoqin Zhu,pei zhang

DOI: https://doi.org/10.1088/1361-6528/ad0485

IF: 3.5

2023-10-19

Nanotechnology

Abstract:This work presents the optimization of the crystallization behavior and reliability of Sn15Sb85 thin films by doping Sm element. The phase transition behaviors induced by thermal were investigated by in-situ resistance measurement. With the addition of Sm element, Sn15Sb85 film exhibits the superior crystallization temperature (232 °C) and data conservation (172.32 °C for 10 years), larger activation energy of crystallization (4.91 eV) and crystalline resistance (~103 Ω), which contributes to the increased thermal stability of the amorphous state and decrease in the programming energy. The Sm-doping can broaden the energy band gap from 0.55 to 1.07 eV. The amorphous Sm and Sn compositions could retard grain growth and refine grain size from 21.13 to 11.13 nm, combining with X-ray diffraction and X-ray photoelectron spectroscopy. The surface morphology of Sn15Sb85 film becomes smoother after Sm doping as determined by atomic force microscopy images, resulting in the improved interfacial reliability. Phase change memory devices based on Sm0.095(Sn15Sb85)0.905 films can successfully achieve the complete SET and RESET reversible operation process with high operating speed (200 ns) and low power consumption (1.6×10-10 J). The results suggest that doping the proper concentration of Sm element will be an effectual solution to adapt and optimize the crystallization properties of Sn15Sb85 phase change material.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
Graphite Carbon-Doped Sb 2 Te Nanostructures for Phase-Change Memory Applications

Peng Xu,Yun Meng,Zhen Li,Xiaolin Liu,Jian Zhou,Sannian Song,Zhitang Song,Zhimei Sun,Liangcai Wu

DOI: https://doi.org/10.1021/acsanm.3c01022

IF: 6.14

2023-05-12

ACS Applied Nano Materials

Abstract:High thermal stability, fast operation speed, low thickness variation, and low resistance drift of phase-change nanomaterials are the essential characteristics in phase-change memory (PCM) applications. In this work, we put forward a graphite carbon-doped Sb2Te (C-Sb2Te) chalcogenide with semiconductor process compatibility. Our results prove that the proposed C-Sb2Te has excellent thermal stability and high operation speed. More importantly, the thickness change and resistance drift are only 0.89% and 0.0149, respectively. The C-Sb2Te-based memory device exhibits a high switching speed to the instrument test limit (5 ns) with a large resistance ratio, low operation voltage (2 V), and low power consumption (6.9 pJ). The proposed C-Sb2Te nanostructure material exceeds both conventional Ge2Sb2Te5 and transition-metal-doped Sb2Te materials in terms of its performance. Ab initio molecular dynamics simulations reveal that C–C and C–Sb bonds as well as C–C chains are formed in C-Sb2Te, and C doping constrains phase transition in a small region and refines grains of C-Sb2Te, thus resulting in the high performance. Our study suggests that C-Sb2Te is a potential candidate for high-speed, high-thermal-stability, and high-reliability PCM applications.

materials science, multidisciplinary,nanoscience & nanotechnology
Nano-crystalline phase change memory with composite Si-Sb-Te film for better data retention and lower operation current

y y lin,hangbing lv,peng zhou,ming yin,f f liao,y f cai,t a tang,j feng,yu zhang,z f zhang,b w qiao,y f lai,b c cai,bing chen

DOI: https://doi.org/10.1109/NVSMW.2007.4290581

2007-01-01

Abstract:Si-Sb-Te (SST) system materials were investigated for non-volatile phase change memory application. By contrast to the conventional GST films, the SST films exhibit stronger thermal stability and smaller RESET current, which were resulted from the self-confine and self-heat mechanisms by the amorphous Si-rich regions surrounding the phase change crystalline in SST. It shows a good promise for non-volatile memory applications.
B21-P-09The Crystal Micro-Structure Evolution of In-Situ Annealed Phase Change Material TiSbTe Film

Yongjin Chen,Qingqing Ding,Bin Zhang,Xiaodong Han,Ze Zhang

DOI: https://doi.org/10.1093/jmicro/dfv253

2015-01-01

Microscopy

Abstract:The explosive growth in the market of smart mobile phones and other portable electronic devices has attracted the interest of the semiconductor industry in non-volatile memory (NVM) technologies. Phase change memory (PCM), which utilizes the large optical and electrical property contrast between crystalline and amorphous phases of phase change materials to store information, has been considered as a promising candidate for the future NVM device [1]. Recently, Min Zhu et al [2] found that the PCM cell which based on TiSbTe(TST) alloy shows much faster Set operation speed and lower Reset power, compared with Ge2Sb2Te5 with the same size. In the present work, the surface morphology, phase and simulated images of the TST film were obtained using AFM technique. The in-situ annealed TEM morphology analyses were used in combination with the electron-diffraction Radial distribution function (RDF) to investigate the structural evolution from amorphous to the polycrystalline phases [3]. The structural evolution characteristics of the TST films were studied as a function of the annealing temperature. Furthermore, the atomic arrangement and defects of the polycrystalline state were revealed through an advanced Cs-corrected scanning transmission electron microscope (STEM) attached with an energy dispersive X-ray (EDX) spectroscope. In conclusion, our results are valuable for understanding the fast, reversible phase-change process of TST materials and also for designing new memory devices. [1] Wuttig, M. & Yamada, N., Nature Mater. 6 (2007)824–832. [2] M. Zhu et al, Nat. Commun. 5 (2014), 4086. [3] L. Zhang et al, Journal of Alloys and Compounds. 537 (2012) 71–75. B21-P-08 doi:10.1093/jmicro/dfv252
Multilayer Ge8Sb92/Ge2Sb2Te5 thin films: Unveiling distinct resistance states and enhanced performance for phase change random access memory

Liu Liu,Anding Li,Yukun Chen,Ruirui Liu,Jiayue Xu,Jiwei Zhai,Zhitang Song,Sannian Song

DOI: https://doi.org/10.1088/1361-6463/ad6a25

2024-08-03

Journal of Physics D Applied Physics

Abstract:This study delves into the phase-change properties of the multilayer [Ge8Sb92(25 nm)-Ge2Sb2Te5(25 nm)]1, unveiling three distinct resistance states. These states arise from two structural transitions: initial Sb precipitation and Ge2Sb2Te5-FCC crystallization, succeeded by the transformation of Ge2Sb2Te5-FCC to Ge2Sb2Te5-HEX with additional Sb precipitation. The [Ge8Sb92(25 nm)-Ge2Sb2Te5(25 nm)]1-based PCRAM device showcases reversible switching characteristics and multi-level storage capabilities within a mere 20 ns, indicating enhanced phase-change speed and storage density. Furthermore, [Ge8Sb92(25 nm)-Ge2Sb2Te5(25 nm)]1 exhibits superior thermal stability and more steadfast data retention compared to conventional Ge2Sb2Te5. These findings offer crucial insights for advancing high-performance PCRAM devices.

physics, applied
Research on Improved Crystallization Properties and Underlying Mechanism of the Sb 2 Te 3 Phase-Change Thin Film by Inserting Sn 15 Sb 85 Layers

Pei Zhang,Weihua Wu,Bowen Fu,Xiaoqin Zhu,Jiwei Zhai

DOI: https://doi.org/10.1021/acsami.4c02905

IF: 9.5

2024-06-05

ACS Applied Materials & Interfaces

Abstract:As a non-volatile semiconductor memory technology, phase-change memory has a wide range of application prospects as a result of the excellent comprehensive performance. In this paper, multilayer thin films based on Sb(2)Te(3) material were designed and prepared by inserting the Sn(15)Sb(85) layer. The thermal and electrical properties of superlattice-like Sb(2)Te(3)/Sn(15)Sb(85) phase-change films can be adjusted by controlling the thickness ratio of Sb(2)Te(3)/Sn(15)Sb(85). In comparison to the...

materials science, multidisciplinary,nanoscience & nanotechnology
Nano Superlattice-like Materials As Thermal Insulators for Phase-Change Random Access Memory

Data Storage Institute,Shi L. P.,Wang W. J.,Zhao R.,Ng L. T.,Lim K. G.,Yang H. X.,Chong T. C.,Yeo Y. C.

DOI: https://doi.org/10.1557/opl.2012.482

2012-01-01

Abstract:Nanoscale superlattice-like (SLL) dielectric was employed to reduce the power consumption of the Phase-change random access memory (PCRAM) cells. In this study, we have simulated and found that the cells with the SLL dielectric have a higher peak temperature compared to that of the cells with the SiO2 dielectric after constant pulse activation, due to the interface scattering mechanism. Scaling of the SLL dielectric has resulted in higher peak temperatures, which can be even higher after material/structural modifications. Furthermore, the SLL dielectric has good material properties that enable the cells to have high endurance. This shows the effectiveness of the SLL dielectric for advanced memory applications.
Picosecond Operation of Optoelectronic Hybrid Phase Change Memory Based on Si‐Doped Sb Films

Qianchen Liu,Tao Wei,Yonghui Zheng,Chuantao Xuan,Lihao Sun,Jing Hu,Miao Cheng,Qianqian Liu,Ruirui Wang,Wanfei Li,Yan Cheng,Bo Liu

DOI: https://doi.org/10.1002/adfm.202417128

IF: 19

2024-11-18

Advanced Functional Materials

Abstract:Optoelectronic hybrid phase change memory has SET/RESET speeds of as fast as 26/13 ps when using Si‐doped Sb films. The absence of the Si─Sb bond results in simple cubic nuclei within the amorphous film, which is the structural basis for high operating speed. The optimal balance between SET speed (65 ps) and data retention (T10‐year = 152 °C) is obtained. Phase‐change random access memory is anticipated to break the bottleneck of the "storage wall" due to its advantages in simultaneous data storage and in‐memory computing. However, operation speed constrains its application scenarios. Antimony (Sb) thin film has ultrafast phase change speeds, low power consumption, and a straightforward chemical composition. In this study, silicon (Si) doping is employed to enhance the stability of pure Sb while achieving both ultrafast operational speeds and superior thermal stability concurrently. By utilizing optoelectronic hybrid phase change memory, the SET and RESET operation speeds can reach as fast as 26 and 13 ps, respectively, when using Si‐doped Sb films. The absence of the Si─Sb bond results in simple cubic nuclei within the amorphous film, which is posited as the structural basis for the high operational speed. These novel insights into ultrafast speed and phase mechanisms are poised to have valuable evidence for future high‐speed memory designs.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology

The Optimization Effect of Titanium on the Phase Change Properties of SnSb4 Thin Films for Phase Change Memory Applications

Impact of titanium modification on the performance improvement and phase change mechanism of ZnSb thin film

Physical Properties and Structure Characteristics of Titanium-Modified Antimony-Selenium Phase Change Thin Film

Cr-doped Sb2Te materials promising for high performance phase-change random access memory

Improvement of phase change behavior in titanium-doped Ge2Sb2Te5 films

Performance optimization of Sn15Sb85 phase change material via introducing multilayer structure

Excellent thermal stability attributed to Cr dopant in Sb2Te phase change material

Characteristics of Si-doped Sb2Te3 thin films for phase-change random access memory

One order of magnitude faster phase change at reduced power in Ti-Sb-Te

Atomic Scale Insight into the Effects of Aluminum Doped Sb2Te for Phase Change Memory Application

Co-doping: An effective strategy for developing stable and high-speed Sb2Te-based phase-change memory

Nano-composite phase-change antimony thin film for fast and persistent memory operations

Study of Si-Doped Sb2te3 Films for Phase Change Memory

Influence of samarium modification on the phase-change performance and phase structure of tin antimonide

Graphite Carbon-Doped Sb 2 Te Nanostructures for Phase-Change Memory Applications

Nano-crystalline phase change memory with composite Si-Sb-Te film for better data retention and lower operation current

B21-P-09The Crystal Micro-Structure Evolution of In-Situ Annealed Phase Change Material TiSbTe Film

Multilayer Ge8Sb92/Ge2Sb2Te5 thin films: Unveiling distinct resistance states and enhanced performance for phase change random access memory

Research on Improved Crystallization Properties and Underlying Mechanism of the Sb 2 Te 3 Phase-Change Thin Film by Inserting Sn 15 Sb 85 Layers

Nano Superlattice-like Materials As Thermal Insulators for Phase-Change Random Access Memory

Picosecond Operation of Optoelectronic Hybrid Phase Change Memory Based on Si‐Doped Sb Films