Abstract:In recent years, wide-bandgap devices (WBG) such as silicon carbide (SiC) and gallium nitride (GaN) transistors have drawn significant research attention in power conversion applications where higher efficiency, higher power density and lower cost are required, for example, in electric vehicle (EV) applications. Owing to its better figures of merit on on-resistance, switching speed and junction temperature, enhancement-mode GaN high electron mobility transistors (HEMTs) are able to be operated with switching frequency up to the megahertz range, through which the size of passive components in the power converters can be significantly reduced. Consequently, the power converter’s integration level and power density can be increased. In GaN-based power converters, the switching energy loss increases naturally along with the switching frequency, which is the dominant loss component. Consequently, it is always one of the top priority performances to be considered in research and development activities. For device manufacturers, with access to internal materials and dimensional parameters, physics-based device models are usually used. Although these models can reveal detailed characteristics of the devices, they are not accessible to the public and can be very time-consuming to develop. Analytical models, that can emulate the transistor’s dynamic behaviour and predict the switching energy loss without consuming too much computing resources, are always an essential tool to help provide guidelines to engineers for circuit design and performance optimization purposes. This thesis develops a computationally inexpensive and straightforward switching transient model which proves to be more accurate than conventional model through simulation and experiments. Currently, in the commercial market, there are only a few mature designs of GaN three-phase inverter products, and most of them are costly. This unavoidable phenomenon is led by the fact that the gate driver and power loop design for GaN is demanding. Some companies such as EPC, Navitas and Power Integrations are committed to monolithic-integrated gate drivers, but they are complex and expensive. Thus, this thesis also aims to design a GaN-based three-phase inverter with low cost and low complexity in the gate drive circuit. In addition, to achieve high performance GaN-based inverter, parasitic components in the power loop have to be minimized. In this thesis study, parasitic parameters of the power loop are extracted through Ansys Q3D simulation and then validated through experimental test results. With accurate parasitic parameters, the layout of the PCBs is improved to achieve better inverter performance.

GaN-Based MHz Single Phase Inverter with a High Efficiency Hybrid TCM Control Method

A GaN-based MHz Active Clamp Flyback Converter with Adaptive Dual Edge Dead Time Modulation for AC-DC Adapters.

Novel ZVS S-TCM Modulation of Three-Phase AC/DC Converters

Performance Analysis of a Single-phase GaN-based 3L-ANPC Inverter for Photovoltaic Applications

A High Frequency High Efficiency GaN Based Bi-Directional 48V/12V Converter with PCB Coupled Inductor for Mild Hybrid Vehicle

High Efficiency Single-phase T-type LCL-filtered Inverter with Multimode Control and Smooth Mode Transition

A High-Efficiency Single-Phase T-Type BCM Microinverter

A High Efficiency Model-Based Adaptive Dead-Time Control Method for GaN HEMTs Considering Nonlinear Junction Capacitors in Triangular Current Mode Operation

Adaptive Zero-Voltage-Switching Control and Hybrid Current Control for High Efficiency Gan-Based Mhz Totem-Pole Pfc Rectifier

A novel control method for dual mode time-sharing grid-connected inverter

Efficiency Improvement of Grid Inverters With Hybrid Devices

A Self-clamping Non-synchronous Duty Cycle Control Strategy for Hybrid Clamping Three-level Buck Converter with GaN Devices

High Efficiency Current Mode Control for Three-Phase Micro-Inverters

A 3kw GaN HEMT Based Three-phase Converter Achieving a Switching Frequency of 300khz and an Efficiency of 97.06%

A Hybrid Three-Phase Seven-Level CHB Inverter with a Novel Modulation Scheme

Smoothed TCM-DPWM and Input Current Ripple Reduction for Three-Phase DC-AC ZVS Inverters

FoM Based Optimal Frequency and Voltage Level Design for High Efficiency High Density Multilevel PFC with GaN Device

A Hybrid Active Neutral Point Clamped Inverter Utilizing Si and Ga2O3 Semiconductors: Modelling and Performance Analysis

Design and Improved Switching Transient Modeling for A GaN-based Three Phase Inverter

Threshold voltage modulation on a CTL-based monolithically integrated E/D-mode GaN inverters platform with improved voltage transfer performance

GaN-Based Interleaved Totem-Pole Single-Phase Inverter with Coupling Inductor Design