Abstract:In-plane heterostructure of hexagonal boron nitride and graphene (h-BN-G) has become a research focus of graphene due to its predicted fascinating properties such as bandgap opening and magnetism, which hence has ignited the attempt of experimentally growing such in-plane two-dimensional (2D) hybrid materials. Many previous researches demonstrated the synthesis of such heterostructures on Cu foils via chemical vapor deposition (CVD) process. The obtained 2D hybrid materials would offer a possibility for fabricating atomically thin electronic devices. However, many fundamental issues are still unclear, including the in-plane atomic continuity, the edge type, and the electronic properties at the boundary of hybridized h-BN and graphene domain. To clarify these issues, we report the syntheses of h-BN-G monolayer heterostructures on strongly coupled Rh(111) substrate and weakly coupled Ir(111) substrate via a two-step growth process in an ultrahigh vacuum (UHV) system, respectively. With the aid of scanning tunneling microscopy (STM), it is revealed that graphene and h-BN could be linked together seamlessly on an atomic scale at the linking boundaries. More importantly, we find that the atomically sharp zigzag-type boundaries dominate the patching interface between graphene and h-BN as demonstrated by atomic-scale STM images. To understand the physical origin of the atomic linking of the h-BN-G heterostructures, we also perform density functional theory (DFT) calculations, including geometry optimizations and binding energy calculations for different kinds of linking interfaces. The calculated results reconfirm that graphene prefers to grow on the h-BN domain edges and form zigzag linking boundaries. Besides the atomic structures on the linking interfaces, the electronic characteristics are also of particular importance. It is worth noting that the substrates coupled strongly with graphene by pi-d orbital hybridization (such as Rh(111) and Ru(0001)), lead to downward shift of graphene pi-bands away from the Fermi level, or decay of the intrinsic electronic structure of graphene. In this regard, the influence of h-BN on the electronic property of graphene is hard to identify on such h-BN-G heterostructures. The weakly coupled Ir(111) is chosen to be a perfect substrate to investigate the interface electronic properties of h-BN-G heterostructure due to the absence of substrate electronic doping effect. Scanning tunneling spectroscopy studies indicate that the graphene and h-BN tend to exhibit their own intrinsic electronic features near the linking boundaries on Ir(111). Therefore, the present work offers a deep insight into the h-BN-G boundary structures and the effect of adlayer-substrate coupling both geometrically and electronically.

Investigating Molecular Orbitals with Submolecular Precision on Pristine Sites and Single Atomic Vacancies of Monolayer H-Bn

Interplay Between Energy-Level Position and Charging Effect of Manganese Phthalocyanines on an Atomically Thin Insulator.

Atomic Layers of Hybridized Boron Nitride and Graphene Domains

Donors, Acceptors, and a Bit of Aromatics: Electronic Interactions of Molecular Adsorbates on hBN and MoS$_2$ Monolayers

An Atomistic Approach for the Structural and Electronic Properties of Twisted Bilayer Graphene-Boron Nitride Heterostructures

Two-Level Electronic Switching in Individual Manganese-Phthalocyanine Molecules with Jahn-Teller Distortion.

An accurate description of the structural and electronic properties of twisted bilayer graphene-boron nitride heterostructures

Atomistic Understanding of the Lateral Growth of Graphene from the Edge of an H-Bn Domain: Towards a Sharp In-Plane Junction.

Scanning tunneling microscopy study of in-plane graphene-hexagonal boron nitride heterostructures

Probing Electronic Properties of CVD Monolayer Hexagonal Boron Nitride by an Atomic Force Microscope

Theoretical Investigation on the Structures, Electronic and Magnetic Properties of New 2D/1D Composite Nanosystems by Adsorbing Superhalogen MnCl3 on the BN Monolayer/nanoribbons

Self-assembly of Manganese Phthalocyanine on Pb(111) Surface: A Scanning Tunneling Microscopy Study

Monatomic reactions with single vacancy monolayer h-BN: DFT studies

Mn Atomic Layers under Inert Covers of Graphene and Hexagonal Boron Nitride Prepared on Rh(111)

Dielectric screening at TMD:hBN interfaces: Monolayer-to-bulk transition, local-field effect, and spatial dependence

Van Der Waals Heterostructures Between Small Organic Molecules and Layered Substrates

Scanning Tunneling Microscopy for Molecules: Effects of Electron Propagation into Vacuum

High resolution scanning-tunneling-microscopy imaging of individual molecular orbitals by eliminating the effect of surface charge

Atomic Adsorption-Controlled Magnetic Properties of a Two-Dimensional (2D) Janus Monolayer

Characterization and manipulation of single molecule on surfaces

Photoelectron Spectroscopy Study of the Electronic Structures at Copc/Bi(111) Interface