Effect of Ag on IMC Growth and Shear Strength of Sn-3.5Ag/Cu Microbumps

Fayao Guo,Huiqin Ling,Yihao Yin,Ming Li,Wenqi Zhang,Liqiang Cao
DOI: https://doi.org/10.1109/icept47577.2019.245191
2019-01-01
Abstract:In three-dimensional interconnect packaging field, the size of copper pillar bumps (CPB) has dropped to 20 μm or even smaller, so exploring the growth mechanism and mechanical properties of small, high-density bumps becomes an important issue. In this research, uniform Sn-3.5Ag/Cu and Sn/Cu bumps were prepared by multilayer electroplating and the effect of Ag on Sn/Cu interfacial reaction during aging at 150 °C as well as shear strength of bumps were investigated. During the aging, Ag 3 Sn formed between Sn/Cu 6 Sn 5 interface in Sn-3.5Ag/Cu bump which inhibited the grain boundary diffusion of Cu and the growth of Cu 6 Sn 5 . The intermetallic compounds (IMC) growth rate of Sn-3.5Ag/Cu and Sn/Cu bumps were calculated as 1.19×10 -17 m 2 /s and 2.55×10 -17 m 2 /s. Meanwhile, Ag had adverse influence on Cu 6 Sn 5 shear strength in Sn-3.5Ag/Cu compared with that in Sn/Cu microbump before aging for 400h, which was ascribed to the balance between precipitation and pinning effect of Ag 3 Sn.
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