Leakage current estimation of CMOS circuit with stack effect

XuYong-Jun,LuoZu-Ying,LiXiao-Wei,LiLi-Jian,HongXian-Long

IF: 1.871

2004-01-01

Journal of Computer Science and Technology

Abstract:Leakage current of CMOS circuit increases dramatically with the technology scaling down and has become a critical issue of high performance system. Subthreshold, gate and reverse biased junction ba...

What problem does this paper attempt to address?

Gate Leakage Analysis of Nano-MOSFETs Using Ensemble Full Band Monte Carlo with Quantum Correction

R. S. Kajen,Ken K. F. Chang,Ping Bai,Erping Li

DOI: https://doi.org/10.1109/isicir.2007.4441815

2007-01-01

Abstract:Gate leakage current is becoming an important component of total leakage current in scaled metal oxide semiconductor field effect transistor (MOSFET) devices. The gate leakage current is mostly predicted by drift diffusion (DD) based simulators which do not accurately model non-linear effects such as velocity overshoot and non-equilibrium hot carrier transport in very short gate length transistors. We present a full-band Monte Carlo (MC) model that has been coupled to a Schrodinger equation solver to predict direct tunneling gate currents in a 50 nm gate length (31 nm channel length) n-type MOSFET in saturation mode, in logic on-state and logic off-state. In addition a dual-thickness gate oxide structure is proposed to reduce the gate tunneling leakage current.
Timing analysis of transistor stack for leakage power saving

Yong Liü,Zhiqiang Gao

DOI: https://doi.org/10.1109/ICECS.2002.1045328

2002-01-01

Abstract:In low-voltage and low-Vt CMOS circuits, transistor stack effect can be used to control the leakage power dissipation. But it may lead to performance loss and larger dynamic power. In this paper, we analyze the relation between performance loss and leakage power dissipation saving when transistor stack is inserted. The variations of all kinds of timing parameters versus the number of transistors in the stack are demonstrated. Two kinds of stack architecture: NMOS and P-NMOS stack architectures are respectively simulated. The optimized number applied to different stack architecture is presented. How to use stack effect in leakage saving is classified and the strategy is also discussed in this paper. Furthermore, the comparison between NMOS and P-NMOS stack architecture is shown, which is helpful for designers make a choice.
Some issues in advanced CMOS gate stack performance and reliability

Li Ming-Fu,Wang X. P.,Shen C.,Yang J. J.,Chen J. D.,Yu H. Y.,Zhu Chunxiang,Huang Daming

DOI: https://doi.org/10.1016/j.mee.2009.08.013

IF: 2.3

2011-01-01

Microelectronic Engineering

Abstract:This paper summarizes and analyzes some of our previous works on the advanced gate stacks for CMOS transistors focused on the following two topics: 1. Frequency dependence of Dynamic Bias Temperature Instability (DBTI) and the transistor degradation mechanism, 2. A novel way for metal gate Effective Work Function (EWF) modulation by incorporation of lanthanum elements in HfO"2 gate dielectric.
Study on leakage power estimation and reduction methodology of CMOS circuit

Zhi-qiang CHEN,Xiao-bo WU,Xiao-lang YAN

DOI: https://doi.org/10.3785/j.issn.1008-973X.2006.05.009

2006-01-01

Abstract:To reduce power leakage of deep sub-micron metal-oxide-semiconductor (CMOS) circuit in standby mode and search the minimum leakage vector (MLV) producing minimum leakage power, a linear programming (LP) model based on leakage power library was proposed. A modified genetic algorithm for MLV searching, which is based on the proposed LP model, was presented also. According to the leakage power value corresponding to individual state of each basic cell in the library, the total leakage power of the circuit was estimated on gate level. Using the LP model as evaluation function, this algorithm searched for MLV from the input vectors set by operations such as natural selection, crossover and mutation. Simulation results showed that the presented methodology could reduce the leakage power effectively. The modified genetic algorithm is convenient for implementation, and suitable for estimating and reducing the leakage power of Very Large Scale Integrated (VLSI) circuits.
VSF: A Leakage Power Evaluation Model for CMOS Combinational Circuits

Xiaoying Zhao,Dong Tong,Xu Cheng

DOI: https://doi.org/10.3969/j.issn.1674-4926.2007.05.032

2007-01-01

Abstract:Two parameters, one called the unified stacking factor (USF) and the other called the circuit virtual stacking factor (VSF), are defined based on the relationship between the transistor stacking effect and the leakage current of standard cells. A VSF-based leakage power evaluation model is then developed and used for evaluating and reducing the leakage power of CMOS combinational circuits. Experiments show that the VSF model is not needed for Hspice simulation when evaluating leakage power. For ISCAS85 benchmark circuits, satisfactory leakage power reduction can be achieved, and the optimization speed can be accelerated greatly.
A Leakage Power Estimation Method for Standard Cell Based Design

Xiaoying Zhao,Kui Wang,Xu Cheng,Dong Tong

DOI: https://doi.org/10.1109/edssc.2005.1635404

2005-01-01

Abstract:The leakage current grows dramatically as the feature size of CMOS circuit scaling down. The estimation of leakage power consumption of CMOS digital circuits can help to find the hot point of the design and evaluate different optimization schemes. This paper introduced a leakage power estimation method compatible with traditional dynamic power estimation flow for standard cell based CMOS design. This method uses node occurrence probability (NOP) information to indicate the state of standard cells. When leakage power look up table was pre-characterized for standard cells, the NOP based method can evaluate the leakage power of standard cell based circuit with the accuracy of HSpice, but the estimation speed will be 100 times faster than HSpice.
VLSI On-Chip Power/ground Network Optimization Considering Decap Leakage Currents

Jingjing Fu,Zuying Luo,Xianlong Hong,Yici Cai,Sheldon X. -D. Tan,Zhu Pan

DOI: https://doi.org/10.1109/aspdac.2005.1466446

2005-01-01

Abstract:In today's power/ground(P/G) network design, on-chip decoupling capacitors(decaps) are usually made of MOS transistors with source and drain connected together. The gate leakage current becomes worse as the gate oxide layer thickness continues to shrink below 20Å. As a result, decaps will become leaky due to the gate leakage from CMOS devices. In this paper, we take a first look at the leaky decaps in P/G network optimization. We propose a leakage current model for practical decaps and also present a new two-stage leakage-current-aware approach to efficiently optimize P/G networks in a more area efficient way.
Computation of Direct Tunneling gate leakage currents in nano-MOSFETs using ensemble Full Band Monte Carlo with quantum correction

Kajen, R.S.,Chang, K.K.F.,Ping Bai,Erping Li

DOI: https://doi.org/10.1109/NANO.2007.4601144

2007-01-01

Abstract:We present the analysis of direct tunneling (DT) gate leakage current in a 25 nm channel length n-channel metal oxide semiconductor field effect transistor MOSFET using an ensemble full band Monte Carlo (FBMC) simulation which incorporates quantum effects using Schrodinger solver. The DT current is simulated and compared with quantum drift diffusion (DD) results using DESSIS. The FBMC simulations yield DT currents one order higher than DD currents. In addition a dual thickness gate oxide structure is simulated using FBMC and DD and found to be effective in reducing the DT current.
Full-Chip Leakage Analysis for 65 Nm Cmos Technology and Beyond

Jiying Xue,Tao Li,Yangdong Deng,Zhiping Yu

DOI: https://doi.org/10.1016/j.vlsi.2010.05.002

IF: 1.345

2010-01-01

Integration

Abstract:This work proposes a full-chip leakage analysis framework for 65nm technology and beyond. Analytical models are first constructed to capture the impact of process parameters on leakage current. Then a methodology is introduced to characterize leakage-related process variations in a systematic manner. On such a basis, an efficient procedure is developed to analyze the state-dependent power dissipation due to leakage of a large circuit block by taking into account different leakage mechanisms. Unlike many traditional approaches that rely on log-normal approximations, the proposed algorithm applies a quadratic model of the logarithm for the full-chip leakage current. It is able to handle both Gaussian and non-Gaussian parameter distributions. The model is validated with test chips manufactured with a commercial 65nm CMOS process. Validation results prove that the proposed modeling methodology could achieve a higher accuracy than that from existing methods. Moreover, a full-chip leakage analysis using the developed model can be orders of magnitude faster than a Monte Carlo based approach.
Statistical analysis of full-chip leakage power for 65nm CMOS node and beyond

Li Tao,Yu Zhiping

IF: 1.019

2009-01-01

Chinese Journal of Electronics

Abstract:In this paper we address the growing issue of statistical full-chip leakage power analysis for 65nm CMOS node and beyond at the circuit level. Specifically, we first develop a fast approach to analyze the state-dependent total leakage power of a large circuit block, considering junction tunneling leakage (I <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">junc</inf> ), subthreshold leakage (I <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">sub</inf> ), and gate oxide leakage (I <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">gate</inf> ). We then propose our algorithm to estimate the full-chip leakage power with consideration of both Gaussian and non-Gaussian parameter distributions, capturing spatial correlations using a grid-based model. The proposed approach is implemented and compared with Monte Carlo simulations on ISCAS85 benchmark circuits and shows high accuracy. Comparison with measurement results of SRAMs is also listed to demonstrate the significance of our method. For a circuit with G gates, the complexity of our approach is O(G).
Accurate and Fast Table Look-Up Models for Leakage Current Analysis in 65 Nm CMOS Technology

Xue Jiying,Li Tao,Yu Zhiping

DOI: https://doi.org/10.1088/1674-4926/30/2/024004

2009-01-01

Abstract:Novel physical models for leakage current analysis in 65 nm technology are proposed. Taking into con-sideration the process variations and emerging effects in nano-scaled technology, the presented models are capable of accurately estimating the subthreshold leakage current and junction tunneling leakage current in 65 nm technol-ogy. Based on the physical models, new table look-up models are developed and first applied to leakage current analysis in pursuit of higher simulation speed. Simulation results show that the novel physical models are in ex-cellent agreement with the data measured from the foundry in the 65 nm process, and the proposed table look-up models can provide great computational efficiency by using suitable interpolation techniques. Compared with the traditional physical-based models, the table look-up models can achieve 2.5X speedup on average on a variety of industry circuits.
Full-Chip Leakage Analysis In Nano-Scale Technologies: Mechanisms, Variation Sources, And Verification

Tao Li,Wenjun Zhang,Zhiping Yu

DOI: https://doi.org/10.1145/1391469.1391622

2008-01-01

Abstract:In this paper, a methodology for full-chip leakage analysis based on accurate modeling of different leakage currents in nano-scaled MOSFETs has been developed. Novel process effects have been covered in our statistical model, and a systematic characterization method of leakage-related parameter variations has been proposed. With these two contributions, we present an effective algorithm to address the growing issue of full-chip leakage verification for actual-fabrication circuits. Unlike many traditional approaches that rely on log-Normal approximations, the proposed algorithm applies a quadratic model of the logarithm for the full-chip leakage current and is able to include both Gaussian and Non-Gaussian parameter distributions. Our simulation examples in a 65nm CMOS process demonstrate that the proposed methodology provides more accurate results compared with the previous methods, while achieving orders of magnitude more efficiency than a Monte Carlo analysis.
Thermal Crosstalk Characterization Using Temperature Dependent Leakage Current Through Gate Stacks

Wangyong Chen,Linlin Cai,Yongfeng Cao,Ming Tian,Xing Zhang,Xiaoyan Liu,Gang Du

DOI: https://doi.org/10.1109/led.2021.3075695

IF: 4.8157

2021-01-01

IEEE Electron Device Letters

Abstract:In this letter, a new method based on the temperature dependence of gate leakage current for accurately characterizing thermal crosstalk is proposed and performed on the advanced silicon-on-insulator (SOI) MOSFETs. The developed technique enables to capture the pure thermal crosstalk effect as it excludes the self-heating impact during the measurement. Moreover, it is proven robust over a large range of gate voltages regardless of the difference of device types, which is demonstrated on a pair of devices with a shared port. The accuracy of the thermal crosstalk measurement benefits in determining the overall thermal performance of the nano-scaled circuits under the mutual heating impacts. It offers a possible hardware solution to thermal monitor and management.
Investigation of Dynamic Leakage-Suppression Logic Techniques Crossing Different Technology Nodes from 180 Nm Bulk CMOS to 7 Nm FinFET Plus Process

Jieyu Li,Zihan Lim,Hao Zhangl,Weifeng He,Yanan Sun,Mingoo Seok

DOI: https://doi.org/10.1109/iscas51556.2021.9401171

2021-01-01

Abstract:Leakage power reduction techniques are crucial for energy-efficient circuits. This paper investigates the leakage suppression capability, performance, and reliability of dynamic leakage suppression logic (DLSL) and feedforward leakage self-suppression logic (FLSL) techniques, crossing different technology nodes from TSMC 180 nm bulk CMOS to 7 nm FinFET Plus process. Compared with CMOS benchmarks, experimental results show that DLSL-based benchmarks demonstrate a leakage power reduction for four orders of magnitude in 180 nm and 130 nm technologies, while only two orders of magnitude in other technologies. Moreover, FLSL offers a 4-28× performance improvement over DLSL at a cost of 2× leakage power.
Study of the Leakage Current Degradation Based on Stacking Faults Expansion in Irradiated SiC Junction Barrier Schottky Diodes

Maojiu Luo,Yourun Zhang,Yucheng Wang,Hang Chen,Rong Zhou,Zhi Wang,Chao Lu,Bo Zhang

DOI: https://doi.org/10.1088/1674-1056/ad6255

2024-07-13

Chinese Physics B

Abstract:A comprehensive investigation was conducted to explore the degradation mechanism of leakage current in SiC junction barrier Schottky (JBS) diodes under heavy ion irradiation. We propose and verify that the generation of stacking faults (SFs) induced by the recombination of massive electron-hole pairs during irradiation is the cause of reverse leakage current degradation based on experiments results. The irradiation experiment was carried out based on Ta ions with high linear energy transfer (LET) of 90.5 MeV/(mg/cm 2 ). It is observed that the leakage current of the diode undergoes the permanent increase during irradiation when biased at 20% of the rated reverse voltage. Micro-PL spectroscopy and PL micro-imaging were utilized to detect the presence of SFs in the irradiated SiC JBS diodes. We combined the degraded performance of irradiated samples with SFs introduced by heavy ion irradiation. Finally, 3D TCAD simulation was employed to evaluate the excessive electron-hole pairs (EHPs) concentration excited by heavy ion irradiation. It was observed that the excessive hole concentration under irradiation exceeded significantly the threshold hole concentration necessary for the expansion of SFs in the substrate. The proposed mechanism suggests that the process and material characteristics of the silicon carbide should be considered in order to reinforcing against the single event effect of SiC power devices.

physics, multidisciplinary
Study of Leakage Current Degradation Based on Stacking Faults Expansion in Irradiated SiC Junction Barrier Schottky Diodes

Maojiu Luo,Yourun Zhang,Yucheng Wang,Hang Chen,Rong Zhou,Zhi Wang,Chao Lu,Bo Zhang

DOI: https://doi.org/10.1088/1674-1056/ad6255

2024-01-01

Chinese Physics B

Abstract:A comprehensive investigation was conducted to explore the degradation mechanism of leakage current in SiC junction barrier Schottky (JBS) diodes under heavy ion irradiation. We propose and verify that the generation of stacking faults (SFs) induced by the recombination of massive electron--hole pairs during irradiation is the cause of reverse leakage current degradation based on experiments results. The irradiation experiment was carried out based on Ta ions with high linear energy transfer (LET) of 90.5 MeV/(mg/cm2). It is observed that the leakage current of the diode undergoes the permanent increase during irradiation when biased at 20% of the rated reverse voltage. Micro-PL spectroscopy and PL micro-imaging were utilized to detect the presence of SFs in the irradiated SiC JBS diodes. We combined the degraded performance of irradiated samples with SFs introduced by heavy ion irradiation. Finally, three-dimensional (3D) TCAD simulation was employed to evaluate the excessive electron-hole pairs (EHPs) concentration excited by heavy ion irradiation. It was observed that the excessive hole concentration under irradiation exceeded significantly the threshold hole concentration necessary for the expansion of SFs in the substrate. The proposed mechanism suggests that the process and material characteristics of the silicon carbide should be considered in order to reinforcing against the single event effect of SiC power devices.
Modeling of SiC MOSFET Behavior in Short-circuit Transient Considering Gate Leakage Current

Jingcun Liu,Guogang Zhang,Bixuan Wang,Wanping Li,Jianhua Wang

DOI: https://doi.org/10.1109/compumag45669.2019.9032761

2019-01-01

Abstract:In the reproduction of SiC MOSFET short-circuit behavior, one major issue that remains is the absence of a proper gate current model, which in tests strongly depends on device temperature. This paper discusses potential mechanisms and determines its origin as thermionic emission effect. By introducing the thermionic current to the classic semiconductor drift-diffusion framework that is coupled with lattice self-heating effect, dynamic gate leakage current development can be mirrored in simulation. Results also shed light on the possible failure physics by revealing the hotspot location, and practical concerns between two unmatched cells. In essence, this modeling method can also be applied to other similar high-temperature operations of SiC MOSFETs.
Gate Leakage Mechanisms in Normally off P-Gan/algan/gan High Electron Mobility Transistors

Ning Xu,Ronghui Hao,Fu Chen,Xiaodong Zhang,Hui Zhang,Peipei Zhang,Xiaoyu Ding,Liang Song,Guohao Yu,Kai Cheng,Yong Cai,Baoshun Zhang

DOI: https://doi.org/10.1063/1.5041343

IF: 4

2018-01-01

Applied Physics Letters

Abstract:In this letter, gate leakage mechanisms in different gate contact normally off p-GaN/AlGaN/GaN high electron mobility transistors (HEMTs) have been studied by the temperature-dependent current-voltage (IG-VG) measurement. It is found that two-dimensional variable range hopping is responsible for gate leakage current at the reverse gate bias and low forward gate bias in both high-leakage and low-leakage Schottky gate contact devices. At high forward gate bias, in the case of high-leakage Schottky contact, the dominant current conduction mechanism is found to be thermionic field emission while it is Poole–Frenkle emission (PFE) for the case of low-leakage Schottky contact and the activation energy of trap states for PFE current is derived as 0.6 eV. Besides, related models are also proposed to describe the gate leakage current in p-GaN gate HEMTs and they match well with the experimental gate leakage current within a wide range of temperatures and gate biases.
Electrical Stress on the CMOS Inverters Made by Junctionless Gate-All-Around Transistors

Wen-Teng Chang,Chia-Chang Yang,Yueh-Ting Ho,Ching-Lun Wang,Wei-I Shen

DOI: https://doi.org/10.1109/ted.2024.3376310

IF: 3.1

2024-01-01

IEEE Transactions on Electron Devices

Abstract:Junctionless gate-all-around (JLGAA) transistors hold promise for improved performance and scalability, thanks to their junctionless (JL) design. However, challenges such as high gate leakage persist. The interfacial gate oxide defects in JLGAA MOSFETs may differ from those in conventional MOSFETs due to their high doping and unique channel fabrication. This study investigates their reliability, finding that under medium reverse drain and gate bias, not only JLGAA pMOSFETs but also nMOSFETs may experience either a decrease in threshold voltage ( $\textit{V}_{\text{t}}\text{)}$ or a $\textit{V}_{\text{t}}$ turnaround effect over time. All devices exhibit a deteriorated subthreshold swing (S.S.) following normal or reverse bias stress. Device simulation suggests that positive bias induces medium electrical stress at the dielectric of pMOSFETs compared with negative bias, particularly at the interfacial SiO $_{\text{2}}$ .

engineering, electrical & electronic,physics, applied
Modeling and Analysis of Loading Effect in Leakage of Nano-Scaled Bulk-CMOS Logic Circuits

Saibal Mukhopadhyay,Swarup Bhunia,Kaushik Roy

DOI: https://doi.org/10.48550/arXiv.0710.4729

2007-10-25

Hardware Architecture

Abstract:In nanometer scaled CMOS devices significant increase in the subthreshold, the gate and the reverse biased junction band-to-band-tunneling (BTBT) leakage, results in the large increase of total leakage power in a logic circuit. Leakage components interact with each other in device level (through device geometry, doping profile) and also in the circuit level (through node voltages). Due to the circuit level interaction of the different leakage components, the leakage of a logic gate strongly depends on the circuit topology i.e. number and nature of the other logic gates connected to its input and output. In this paper, for the first time, we have analyzed loading effect on leakage and proposed a method to accurately estimate the total leakage in a logic circuit, from its logic level description considering the impact of loading and transistor stacking.

Leakage current estimation of CMOS circuit with stack effect

Gate Leakage Analysis of Nano-MOSFETs Using Ensemble Full Band Monte Carlo with Quantum Correction

Timing analysis of transistor stack for leakage power saving

Some issues in advanced CMOS gate stack performance and reliability

Study on leakage power estimation and reduction methodology of CMOS circuit

VSF: A Leakage Power Evaluation Model for CMOS Combinational Circuits

A Leakage Power Estimation Method for Standard Cell Based Design

VLSI On-Chip Power/ground Network Optimization Considering Decap Leakage Currents

Computation of Direct Tunneling gate leakage currents in nano-MOSFETs using ensemble Full Band Monte Carlo with quantum correction

Full-Chip Leakage Analysis for 65 Nm Cmos Technology and Beyond

Statistical analysis of full-chip leakage power for 65nm CMOS node and beyond

Accurate and Fast Table Look-Up Models for Leakage Current Analysis in 65 Nm CMOS Technology

Full-Chip Leakage Analysis In Nano-Scale Technologies: Mechanisms, Variation Sources, And Verification

Thermal Crosstalk Characterization Using Temperature Dependent Leakage Current Through Gate Stacks

Investigation of Dynamic Leakage-Suppression Logic Techniques Crossing Different Technology Nodes from 180 Nm Bulk CMOS to 7 Nm FinFET Plus Process

Study of the Leakage Current Degradation Based on Stacking Faults Expansion in Irradiated SiC Junction Barrier Schottky Diodes

Study of Leakage Current Degradation Based on Stacking Faults Expansion in Irradiated SiC Junction Barrier Schottky Diodes

Modeling of SiC MOSFET Behavior in Short-circuit Transient Considering Gate Leakage Current

Gate Leakage Mechanisms in Normally off P-Gan/algan/gan High Electron Mobility Transistors

Electrical Stress on the CMOS Inverters Made by Junctionless Gate-All-Around Transistors

Modeling and Analysis of Loading Effect in Leakage of Nano-Scaled Bulk-CMOS Logic Circuits