Abstract:High-density nitrogen plasma was produced using a high-power pulsed power modulator to sputter titanium targets for the preparation of titanium nitride film. The high-power pulsed sputtering discharge unit consisted of two targets facing each other with the same electrical potential. The titanium target plates were used as target materials with dimensions of 60 mm length, 20 mm height, and 5 mm thickness. The gap length was set to be 10 mm. The magnetic field was created with a permanent magnet array behind the targets. The magnetic field strength at the gap between the target plates was 70 mT. The electrons were trapped by the magnetic and electric fields to enhance the ionization in the gap. The nitrogen and argon gases were injected into the chamber with 4 Pa gas pressure. The applied voltage to the target plates had an amplitude from −600 V to −1000 V with 600 μs in pulse width. The target current was approximately 10 A with the consumed power of 13 kW. The discharge sustaining voltage was almost constant and independent of the applied voltage, in the same manner as the conventional normal glow discharge. The ion density and electron temperature at the surface of the ionization region were obtained as 1.7 × 1019 m−3 and 3.4 eV, respectively, by the double probe measurements. The vertical distribution of ion density and electron temperature ranged from 1.1 × 1017 m−3 (at 6 cm from the target edge) to 1.7 × 1019 m−3 and from 2.4 eV (at 6 cm from the target edge) to 3.4 eV, respectively. From the emission spectra, the intensities of titanium atoms (Ti I), titanium ions (Ti II), and nitrogen ions (N2+) increased with increasing input power. However, the intensities ratio of Ti II to Ti I was not affected by the intensities from N2+.

Igniters Realized Through Sputtered Tantalum Nitride(TaN) Film Bridge

Fabrication and Characteristics of Energetic Igniters Realized Through Sputtered Tantalum Nitride(TaN) Film Bridge

Characteristics of the Energetic Igniters Through Integrating B/Ti Nano-Multilayers on TaN Film Bridge

Reactive B/Ti Nano-Multilayers with Superior Performance in Plasma Generation.

Ignition Characteristics of Energetic Nichrome Bridge Initiator Based on Al/CuO Reactive Multilayer Films under Capacitor Discharge and Constant Current Conditions

Structural and electrical properties of tantalum nitride thin films fabricated by using reactive radio-frequency magnetron sputtering

Study on Electro Explosion Performance of Al/Ni Bridge Films

Characteristics of the Energetic Micro-initiator Through Integrating Al/Ni Nano-multilayers with Cu Film Bridge

Enhanced Energetic Performances Based on Integration with the Al/PTFE Nanolaminates

Effects of nitrogen composition on the resistivity of reactively sputtered TaN thin films

Design and fabrication of energetic Al/Ni exploding foil with enhanced energy efficiency and plasma density for direct ignition

Effects of Tantalum Alloying on Surface Morphology and Deuterium Retention in Tungsten Exposed to Deuterium Plasma

Growth Mechanisms of TaN Thin Films Produced by DC Magnetron Sputtering on 304 Steel Substrates and Their Influence on the Corrosion Resistance

Microstructure and Thermal Diffusivity Investigations of RF-Sputtered Tantalum Nitride Films

Barrier Metal Properties of Amorphous Tantalum Nitride Thin Films between Platinum and Silicon deposited using Remote Plasma Metal Organic Chemical Vapor Method

Effects of Tantalum Concentration on the Microstructures and Mechanical Properties of Tungsten-Tantalum Alloys

From nanoparticles to on-chip 3D nanothermite: electrospray deposition of reactive Al/CuO@NC onto semiconductor bridge and its application for rapid ignition

Influence of nitrogen concentration on electrical, mechanical, and structural properties of tantalum nitride thin films prepared via DC magnetron sputtering

From nanoparticles to on-chip 3D nanothermite: electrospray deposition of reactive Al/CuO@NC onto semiconductor bridge and its application for rapid ignition.

Effect of gas Pressure on the Mechanical Properties of Sputtered TaN Films

Production of High-Power Nitrogen Sputtering Plasma for TiN Film Preparation