Abstract:Transition metal (TM)-doped dilute magnetic semiconductors (DMS) have emerged as promising materials for spintronic applications such as spin-polarized transport and information storage. However, achieving robust room-temperature ferromagnetism in DMS remains a key challenge. This work undertakes a comprehensive investigation of the effects of Ti- and Cr-doping and (Ti,Cr)-codoping on the structural, electronic, and magnetic properties of wurtzite ZnS using first-principles pseudopotential plane-wave self-consistent field calculations and Monte Carlo simulations. The first-principles DFT calculations were performed using the spin-polarized GGA+U approach to account for strong electron–electron interactions. Structural relaxations revealed expanded lattice parameters and bond lengths for the doped systems compared to pure ZnS, attributed to the larger ionic radii of the dopants. Formation energy calculations confirmed the thermodynamic stability of doping. The band structure and density of states analysis demonstrated the half-metallic nature of the doped ZnS systems with 100% spin polarization induced by strong hybridization between the TM-3d and S-3p states. This mediates robust ferromagnetic coupling, with total magnetic moments around 4-8 μB /cell depending on dopant type and concentration. To complement the zero-temperature DFT results, temperature-dependent Monte Carlo simulations using the single-spin flip Heat Bath algorithm were implemented. The modeling of magnetization, susceptibility, specific heat, and hysteresis loops enabled extracting Curie temperatures up to 427.6 K for 12.5% Cr-doped ZnS. The synergistic combination of first-principles DFT and Monte Carlo computational techniques provides significant insights into tailoring the magnetic properties of TM-doped ZnS dilute magnetic semiconductors. The tunability of structural, electronic, and magnetic characteristics through control of dopant selection and concentration demonstrates the promising potential of transition metal-doped ZnS for spintronic devices operable at room-temperature.

Defect-induced Room Temperature Ferromagnetism in Cu-doped In2S3QDs

Magnetism in Molybdenum Disulphide Monolayer with Sulfur Substituted by 3d Transition Metals

Hybrid Chalcopyrite-Polymer Magnetoconducting Materials

Interface-induced enhanced room temperature ferromagnetism in hybrid transition metal dichalcogenides

Decisive Role of the Defect-Clustering Effect in the Variation of Magnetic Order in Diluted Magnetic Binary Metal Oxides

Ferromagnetism of Ni and I Co-Doped CdS: A First-Principles Study

Intrinsic room-temperature ferromagnetism in a two-dimensional semiconducting metal-organic framework

Defect-induced Room Temperature Ferromagnetism in Un-Doped InN Film

Cationic and Oxygen Defects Modulation for Tailoring Bandgap and Room Temperature Ferromagnetism of CuO via Multiple d-Block Cations

Realizing ferromagnetic coupling in diluted magnetic semiconductor quantum dots.

Atomic-Scale Magnetism of Cr-Doped Bi2Se3 Thin Film Topological Insulators.

Ferromagnetism induced by hybridization of Fe 3d orbitals with ligand InSb bands in n-type ferromagnetic semiconductor (In,Fe)Sb

Ferromagnetism in dilute magnetic semiconductors through defect engineering: Li-doped ZnO.

Appearance of room temperature ferromagnetism in Cu-doped TiO$_{2-δ}$ films

Cr-doped CdS and ZnS nano/micro structure with ferromagnetic properties

Tuning the magnetic properties of doped ZnS using transition metal doping: A multi-scale computational approach

Room-temperature Electric-Field Controlled Ferromagnetism in Mn0.05Ge0.95 Quantum Dots.

Te doping effects on the ferromagnetic performance of the MnGe/Si quantum dots grown by ion beam sputtering deposition

Non-stoichiometry induced 2H-1T phase interfaces and room-temperature ferromagnetism in defective molybdenum selenide

Modulation of Ferromagnetism Through Electron Doping in Pd-Doped Β-Ga2o3

Ultra-High-Temperature Ferromagnetism in Intrinsic Tetrahedral Semiconductors.