Abstract:Atomically thin indium selenide (InSe) is a representative two-dimensional (2D) family that have recently attracted extensive interest for their intriguing emerging physics and potential optoelectronic applications with high-performance. Here, by utilizing molecular beam epitaxy and scanning tunneling microscopy, we report a controlled synthesis of InSe thin films down to the monolayer limit and characterization of their electronic properties at atomic scale. Highly versatile growth conditions are developed to fabricate well crystalline InSe films, with a reversible and controllable phase transformation between InSe and In<sub>2</sub>Se<sub>3</sub>. The band gap size of InSe films, as enhanced by quantum confinement, increases with decreasing film thickness. Near various categories of lattice imperfections, the band gap becomes significantly enlarged, resulting in a type-I band alignments for lateral heterojunctions. Such band gap enhancement, as unveiled from our first-principles calculations, is ascribed to the local compressive strain imposed by the lattice imperfections. Moreover, InSe films host highly conductive 2D electron gas, manifesting prominent quasiparticle scattering signatures. The 2D electron gas is self-formed via substrate doping of electrons, which shift the Fermi level above the confinement-quantized conduction band. Our study identifies InSe ultrathin film as an appealing system for both fundamental research and potential applications in nanoelectrics and optoelectronics.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsnano.1c03724?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsnano.1c03724</a>.Figures of layer-dependent band structure for 1–4 TL InSe; figure of STS spectra in a linear scale for 1–5 TL InSe; figure of STS linecuts across various defects; figure of STS spectra with spatial homogeneity; figure of 2D plot of STS spectra across a strained defect; figure of STS spectra across various defects/step boundaries; figure of comparison for the QPI observations and the STS in determining the band gap size; figure of comparison for the onset and shoulder of band gap edge; figure of band bending across different layer steps (<a class="ext-link" href="/doi/suppl/10.1021/acsnano.1c03724/suppl_file/nn1c03724_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

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