Bias‐Stress‐Stable Low‐Voltage Organic Field‐Effect Transistors with Ultrathin Polymer Dielectric on C Nanoparticles

Jie Liu,Chen-Huan Wang,Chang-Hai Liu,Qin-Liang Li,Xu Gao,Sui-Dong Wang
DOI: https://doi.org/10.1002/aelm.201500349
IF: 6.2
2016-01-01
Advanced Electronic Materials
Abstract:Advanced Electronic MaterialsVolume 2, Issue 4 1500349 Communication Bias-Stress-Stable Low-Voltage Organic Field-Effect Transistors with Ultrathin Polymer Dielectric on C Nanoparticles Jie Liu, Jie Liu Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu, 215123 P. R. ChinaSearch for more papers by this authorChen-Huan Wang, Chen-Huan Wang Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu, 215123 P. R. ChinaSearch for more papers by this authorChang-Hai Liu, Chang-Hai Liu Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu, 215123 P. R. ChinaSearch for more papers by this authorQin-Liang Li, Qin-Liang Li Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu, 215123 P. R. ChinaSearch for more papers by this authorXu Gao, Xu Gao Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu, 215123 P. R. ChinaSearch for more papers by this authorSui-Dong Wang, Corresponding Author Sui-Dong Wang Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu, 215123 P. R. ChinaE-mail: [email protected]Search for more papers by this author Jie Liu, Jie Liu Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu, 215123 P. R. ChinaSearch for more papers by this authorChen-Huan Wang, Chen-Huan Wang Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu, 215123 P. R. ChinaSearch for more papers by this authorChang-Hai Liu, Chang-Hai Liu Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu, 215123 P. R. ChinaSearch for more papers by this authorQin-Liang Li, Qin-Liang Li Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu, 215123 P. R. ChinaSearch for more papers by this authorXu Gao, Xu Gao Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu, 215123 P. R. ChinaSearch for more papers by this authorSui-Dong Wang, Corresponding Author Sui-Dong Wang Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu, 215123 P. R. ChinaE-mail: [email protected]Search for more papers by this author First published: 04 February 2016 https://doi.org/10.1002/aelm.201500349Citations: 12Read the full textAboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Graphical Abstract Hybrid gate dielectrics, fabricated by depositing low-k polymers on sputtered C nanoparticles (NPs), show ultrathin, robust, and pinhole-free features. The C NPs play a key role in the formation of good dielectrics. Based on the dielectrics, high-performance low-voltage organic field-effect transistors (OFETs) with excellent bias stress stability and flexible compatibility are achieved. This is a general method for various low-k polymers and applicable to both p-type and n-type OFETs. Citing Literature Supporting Information As a service to our authors and readers, this journal provides supporting information supplied by the authors. Such materials are peer reviewed and may be re-organized for online delivery, but are not copy-edited or typeset. Technical support issues arising from supporting information (other than missing files) should be addressed to the authors. Filename Description aelm201500349-sup-0001-S1.pdf1,013.1 KB Supplementary Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article. 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