Low Cost Universal High‐k Dielectric for Solution Processing and Thermal Evaporation Organic Transistors
Zongrong Wang,Xiaochen Ren,Congcheng Fan,Ya-Huei Chang,Hanying Li,Hongzheng Chen,Shien-Ping Feng,Sanqiang Shi,Paddy K. L. Chan
DOI: https://doi.org/10.1002/admi.201300119
IF: 5.4
2014-01-01
Advanced Materials Interfaces
Abstract:Advanced Materials InterfacesVolume 1, Issue 3 1300119 Communication Low Cost Universal High-k Dielectric for Solution Processing and Thermal Evaporation Organic Transistors Zongrong Wang, Zongrong Wang Department of Mechanical Engineering, The University of Hong Kong, Hong Kong Department of Mechanical Engineering, The Hong Kong Polytechnic University, Hong KongSearch for more papers by this authorXiaochen Ren, Xiaochen Ren Department of Mechanical Engineering, The University of Hong Kong, Hong KongSearch for more papers by this authorCongcheng Fan, Congcheng Fan State Key Laboratory of Silicon Materials, MOE Key Laboratory of Macromolecule Synthesis and Functionalization, Department of Polymer, Science and Engineering, Zhejiang University, ChinaSearch for more papers by this authorYa-Huei Chang, Ya-Huei Chang Department of Mechanical Engineering, The University of Hong Kong, Hong KongSearch for more papers by this authorHanying Li, Hanying Li State Key Laboratory of Silicon Materials, MOE Key Laboratory of Macromolecule Synthesis and Functionalization, Department of Polymer, Science and Engineering, Zhejiang University, ChinaSearch for more papers by this authorHongzheng Chen, Hongzheng Chen State Key Laboratory of Silicon Materials, MOE Key Laboratory of Macromolecule Synthesis and Functionalization, Department of Polymer, Science and Engineering, Zhejiang University, ChinaSearch for more papers by this authorShien-Ping Feng, Shien-Ping Feng Department of Mechanical Engineering, The University of Hong Kong, Hong KongSearch for more papers by this authorSanqiang Shi, Sanqiang Shi Department of Mechanical Engineering, The Hong Kong Polytechnic University, Hong KongSearch for more papers by this authorPaddy K. L. Chan, Corresponding Author Paddy K. L. Chan Department of Mechanical Engineering, The University of Hong Kong, Hong KongE-mail: pklc@hku.hkSearch for more papers by this author Zongrong Wang, Zongrong Wang Department of Mechanical Engineering, The University of Hong Kong, Hong Kong Department of Mechanical Engineering, The Hong Kong Polytechnic University, Hong KongSearch for more papers by this authorXiaochen Ren, Xiaochen Ren Department of Mechanical Engineering, The University of Hong Kong, Hong KongSearch for more papers by this authorCongcheng Fan, Congcheng Fan State Key Laboratory of Silicon Materials, MOE Key Laboratory of Macromolecule Synthesis and Functionalization, Department of Polymer, Science and Engineering, Zhejiang University, ChinaSearch for more papers by this authorYa-Huei Chang, Ya-Huei Chang Department of Mechanical Engineering, The University of Hong Kong, Hong KongSearch for more papers by this authorHanying Li, Hanying Li State Key Laboratory of Silicon Materials, MOE Key Laboratory of Macromolecule Synthesis and Functionalization, Department of Polymer, Science and Engineering, Zhejiang University, ChinaSearch for more papers by this authorHongzheng Chen, Hongzheng Chen State Key Laboratory of Silicon Materials, MOE Key Laboratory of Macromolecule Synthesis and Functionalization, Department of Polymer, Science and Engineering, Zhejiang University, ChinaSearch for more papers by this authorShien-Ping Feng, Shien-Ping Feng Department of Mechanical Engineering, The University of Hong Kong, Hong KongSearch for more papers by this authorSanqiang Shi, Sanqiang Shi Department of Mechanical Engineering, The Hong Kong Polytechnic University, Hong KongSearch for more papers by this authorPaddy K. L. Chan, Corresponding Author Paddy K. L. Chan Department of Mechanical Engineering, The University of Hong Kong, Hong KongE-mail: pklc@hku.hkSearch for more papers by this author First published: 27 February 2014 https://doi.org/10.1002/admi.201300119Citations: 12Read the full textAboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Share a linkShare onFacebookTwitterLinked InRedditWechat Abstract The surface energy of UV-ozone treated BST dielectric is modulated by the storage duration and environment. By carefully controlling the surface energy, this low temperature, solution processed thin film is employed as the insulator for both thermal evaporated and solution processed OFETs. Both OFETs and saturated load inverters show high mobility and gain with an operating voltage less than 3 V. Citing Literature Supporting Information As a service to our authors and readers, this journal provides supporting information supplied by the authors. Such materials are peer reviewed and may be re-organized for online delivery, but are not copy-edited or typeset. Technical support issues arising from supporting information (other than missing files) should be addressed to the authors. Filename Description admi201300119-sup-0001-S1.pdf1,005.7 KB Supplementary Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article. 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