Abstract:Abstract Electro-optic modulators have been identified as the key drivers for optical communication and signal processing. With an ongoing miniaturization of photonic circuitries, an outstanding aim is to demonstrate an on-chip, ultra-compact, electro-optic modulator without sacrificing bandwidth and modulation strength. While silicon-based electro-optic modulators have been demonstrated, they require large device footprints of the order of millimeters as a result of weak non-linear electro-optical properties. The modulation strength can be increased by deploying a high-Q resonator, however with the trade-off of significantly sacrificing bandwidth. Furthermore, design challenges and temperature tuning limit the deployment of such resonance-based modulators. Recently, novel materials like graphene have been investigated for electro-optic modulation applications with a 0.1 dB per micrometer modulation strength, while showing an improvement over pure silicon devices, this design still requires device lengths of tens of micrometers due to the inefficient overlap between the thin graphene layer, and the optical mode of the silicon waveguide. Here we experimentally demonstrate an ultra-compact, silicon-based, electro-optic modulator with a record-high 1 dB per micrometer extinction ratio over a wide bandwidth range of 1 μm in ambient conditions. The device is based on a plasmonic metal-oxide-semiconductor (MOS) waveguide, which efficiently concentrates the optical modes’ electric field into a nanometer thin region comprised of an absorption coefficient-tuneable indium-tin-oxide (ITO) layer. The modulation mechanism originates from electrically changing the free carrier concentration of the ITO layer which dramatically increases the loss of this MOS mode. The seamless integration of such a strong optical beam modulation into an existing silicon-on-insulator platform bears significant potential towards broadband, compact and efficient communication links and circuits.

All optical micro ring modulator with phosphorene film

Ultrafast All-Optical Graphene Modulator.

Fast Thermo-Optical Modulators with Doped-Silicon Heaters Operating at 2 Μm.

A High-Speed Silicon Ring Modulator with a Large Working Wavelength Range

Ultra-High Dynamic Extinction Ratio Electro-Optical Modulator with Coupled Microring on SOI Platform

Optical Ring-Resonator Modulator Based on 0.8 Μm CMOS Technology

High-speed silicon modulator based on cascaded microring resonators.

Optoelectronic Oscillator Based on a Silicon Microring Modulator

High-speed Silicon Modulators for the 2 Μm Wavelength Band

Silicon Photonic Micro-Ring Modulator-based 4 x 112 Gb/s O-band WDM Transmitter with Ring Photocurrent-based Thermal Control in 28nm CMOS

All-Optical Modulator Using MXene Inkjet-Printed Microring Resonator

Miniaturized Low-power Electro-optic Modulator Based on Silicon Integrated Nanophotonics and Organic Polymers

Tunability Analysis of a Graphene-Embedded Ring Modulator

Low-power infrared-tunable all-optical intensity modulator based on micro-nano fiber integrated with 3C-SiC nanowires

Ultrahigh thermal-efficient all-optical silicon photonic crystal nanobeam cavity modulator with TPA-induced thermo-optic effect

Ultra-sensitive All-Optical Phase Modulation Based on a Fiber Optic Interferometer Combined with Ti3C2Tx MXene-incorporated PDMS

Ultra-fast Perovskite Electro-Optic Modulator and Multi-Band Transmission Up to 300 Gbit S−1

Ultra-sensitive all-optical phase modulation based on a fiber optic interferometer combined with Ti<sub>3</sub>C<sub>2</sub>T<sub>x</sub> MXene-incorporated PDMS

Fano Resonance Thermo-Optic Modulator Based on Double T-Bus Waveguides-Coupled Micro-Ring Resonator

Efficient and Fast All-Optical Modulator with in Situ Grown MoTe2 Nanosheets on Silicon

Ultra-compact Silicon Nanophotonic Modulator with Broadband Response