Abstract:Abstract Electro-optic modulators have been identified as the key drivers for optical communication and signal processing. With an ongoing miniaturization of photonic circuitries, an outstanding aim is to demonstrate an on-chip, ultra-compact, electro-optic modulator without sacrificing bandwidth and modulation strength. While silicon-based electro-optic modulators have been demonstrated, they require large device footprints of the order of millimeters as a result of weak non-linear electro-optical properties. The modulation strength can be increased by deploying a high-Q resonator, however with the trade-off of significantly sacrificing bandwidth. Furthermore, design challenges and temperature tuning limit the deployment of such resonance-based modulators. Recently, novel materials like graphene have been investigated for electro-optic modulation applications with a 0.1 dB per micrometer modulation strength, while showing an improvement over pure silicon devices, this design still requires device lengths of tens of micrometers due to the inefficient overlap between the thin graphene layer, and the optical mode of the silicon waveguide. Here we experimentally demonstrate an ultra-compact, silicon-based, electro-optic modulator with a record-high 1 dB per micrometer extinction ratio over a wide bandwidth range of 1 μm in ambient conditions. The device is based on a plasmonic metal-oxide-semiconductor (MOS) waveguide, which efficiently concentrates the optical modes’ electric field into a nanometer thin region comprised of an absorption coefficient-tuneable indium-tin-oxide (ITO) layer. The modulation mechanism originates from electrically changing the free carrier concentration of the ITO layer which dramatically increases the loss of this MOS mode. The seamless integration of such a strong optical beam modulation into an existing silicon-on-insulator platform bears significant potential towards broadband, compact and efficient communication links and circuits.

Efficient and Fast All-Optical Modulator with in Situ Grown MoTe2 Nanosheets on Silicon

Efficient and Fast All-Optical Modulator with In Situ Grown MoTe 2 Nanosheets on Silicon

All-optical modulation based on MoS 2 -Plasmonic nanoslit hybrid structures

Fast Thermo-Optical Modulators with Doped-Silicon Heaters Operating at 2 Μm.

Efficient and Compact Sol-Gel TiO2 Thermo-Optic Microring Resonator Modulator

Single-Nanowire Thermo-Optic Modulator Based on a Varshni Shift

Ultra-compact Silicon Nanophotonic Modulator with Broadband Response

Optical Ring-Resonator Modulator Based on 0.8 Μm CMOS Technology

High-speed Silicon Modulators for the 2 Μm Wavelength Band

All-Optical Modulator Using MXene Inkjet-Printed Microring Resonator

Highly Efficient Silicon Michelson Interferometer Modulators

High-speed silicon modulator based on cascaded microring resonators.

High‐Efficiency All‐Optical Modulator Based on Ultra‐Thin Silicon/Graphene Hybrid Waveguides

Development of Silicon Photonic Devices for Optical Interconnects

Low-power infrared-tunable all-optical intensity modulator based on micro-nano fiber integrated with 3C-SiC nanowires

High-modulation-efficiency InGaAsP/Si hybrid MOS optical modulator with Mach-Zehnder interferometer

All-optical modulator based on MoS2-PVA thin film

SnSe-Coated Microfiber Resonator for All-Optical Modulation

Design and Simulation of a Fast All-Optical Modulator Based on Photonic Crystal Using Ring Resonators

Robust, Efficient, Micrometre-Scale Phase Modulators at Visible Wavelengths

Single-Nanoparticle Plasmonic Electro-Optic Modulator Based on Mos2 Monolayers