The Study of Bending Properties of Monolayer MoS2 in Non-Collinear Electrodes Using First Principles Theory

Gengshu Wu,Haijun Lou,Kai Liu,Xinnan Lin

DOI: https://doi.org/10.1039/d0cp02714f

2020-01-01

Abstract:Theoretical maximum bending angle of non-collinear electrodes MoS2 devices in both the equilibrium state and non-equilibrium state.

What problem does this paper attempt to address?

On the Electronic Structure of 2H-MoS2: Correlating DFT Calculations and In-Situ Mechanical Bending on TEM

Manuel Ramos,Oscar A. López-Galán,Javier Polanco,Miguel José-Yacamán

DOI: https://doi.org/10.3390/ma15196732

IF: 3.4

2022-09-30

Materials

Abstract:We present a systematic density functional theory study to determine the electronic structure of bending 2H-MoS2 layers up to 75° using information from in-situ nanoindentation TEM observations. The results from HOMO/LUMO and density of states plots indicate a metallic transition from the typical semiconducting phase, near Fermi energy level (EF) as a function of bending, which can mainly occur due to bending curvatures inducing a stretching and contracting of sulfur-sulfur chemical bonds located mostly over basal (001)-plane; furthermore, molybdenum ions play a major role in such transitions due to reallocation of their metallic d-character orbitals and the creation of "free electrons", possibly having an overlap between Mo-dx2-y2 and Modz2 orbitals. This research on the metallic transition of 2H-MoS2 allows us to understand the high catalytic activity for MoS2 nanostructures as extensively reported in the literature.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,metallurgy & metallurgical engineering
First-Principles Study of Electronic and Elastic Properties of Hexagonal Layered Crystal MoS2 Under Pressure

Jiaonan Yuan,Yan Cheng,Xiu-Qing Zhang,Xiang-Rong Chen,Ling-Cang Cai

DOI: https://doi.org/10.1515/zna-2015-0102

2015-01-01

Abstract:The structural, electronic, and elastic properties of hexagonal layered crystal MoS2 under pressure are investigated using first-principles calculations within the local density approximation (LDA). The calculated lattice parameters a(0), c(0), and cell volume V-0 of MoS2 are in good agreement with the available experimental data. Our calculations show that MoS2 is an indirect band gap semiconductor and there is a vanishing anisotropy in the rate of structural change at around 25 GPa, which is consistent with the experimental result. We also analyse the partial density of states (PDOS) of MoS2 at 0 and 14 GPa, which indicate that the whole valence bands of MoS2 are mainly composed by the Mo-4d and S-3s states at 0 GPa, while they are mainly composed by the Mo-4p, Mo-4d, and S-3p states at 14 GPa. The electronic charge density difference maps show the covalent characteristic of Mo-S, and the bonding properties of MoS2 are investigated by using the Mulliken overlap population. In addition, the elastic constants C-ij, bulk modulus B, shear modulus G, Young's modulus Y, the Debye temperature Theta(D), and hardness H of MoS2 are also obtained successfully. It is found that they all increase monotonically with the increasing pressure.
Edge Reconstruction-Dependent Growth Kinetics of MoS2

Jichen Dong,Degong Ding,Chuanhong Jin,Yunqi Liu,Feng Ding

DOI: https://doi.org/10.1021/acsnano.2c05397

IF: 17.1

2022-01-01

ACS Nano

Abstract:Understanding the growth mechanisms of multielement two-dimensional (2D) crystals is challenging because of the unbalanced stoichiometry and possible reconstruction of their edges. Here, we present a systematic theoretical study on the chemical vapor deposition (CVD) growth mechanism of MoS2. We found that the growth kinetics of MoS2 highly depends on its edge reconstruction determined by concentrations of Mo and S in the growth environment. Based on the calculated energies of nucleation and propagation of various MoS2 edges, we predicted the transition of a MoS2 island growth from a regime of a triangle enclosed by Mo-terminated zigzag edges that are passivated by 50% S (Mo-II edges), to a regime of continuous evolution within a triangle, hexagon, and inverted triangle with 75%-S-terminated edges (S-III edges) and Mo-II edges, and finally to a regime of triangles with Mo-terminated zigzag edges that are passivated by 100% S (Mo-III edges) by tuning the growth condition from Mo-rich to S-rich, which provides a reasonable explanation to many experimental observations. This study provides a general guideline on theoretical studies of 2D crystals' growth mechanisms, deepens our understanding on the growth mechanism of multielement 2D crystals, and is beneficial for the controllable synthesis of various 2D crystals.
Doping MoS2 Monolayer with Nonmetal Atoms to Tune Its Electronic and Magnetic Properties, and Chemical Activity: a Computational Study

Xin Wen,Shansheng Yu,Yongcheng Wang,Yuejie Liu,Hongxia Wang,Jingxiang Zhao

DOI: https://doi.org/10.1039/c9nj00466a

IF: 3.3

2019-01-01

New Journal of Chemistry

Abstract:The introduction of heteroatom into MoS2 nanosheet can effectively tune the electronic properties and enhance its chemical reactivity towards small molecules, thus greatly widening their applications.
On the bending of rectangular atomic monolayers along different directions: an ab initio study

Shashikant Kumar,Phanish Suryanarayana

DOI: https://doi.org/10.1088/1361-6528/aca4d6

IF: 3.5

2022-12-07

Nanotechnology

Abstract:We study the bending of rectangular atomic monolayers along different directions from first principles. Specifically, choosing the phosphorene, GeS, TiS3, and As2S3monolayers as representative examples, we perform Kohn-Sham density functional theory calculations to determine the variation in transverse flexoelectric coefficient and bending modulus with the direction of bending. We find that while the flexoelectric coefficient is nearly isotropic, there is significant and complex anisotropy in bending modulus that also differs between the monolayers, with extremal values not necessarily occurring along the principal directions. In particular, the commonly adopted orthotropic continuum plate model with uniform thickness fails to describe the observed variations in bending modulus for GeS, TiS3, and As2S3. We determine the direction-dependent effective thickness for use in such continuum models. We also show that the anisotropy in bending modulus is not associated with the rehybridization of atomic orbitals.
Mechanical Behaviors of MoS Nanowires under Tension from Molecular Dynamics Simulations

Penghua Ying,Jin Zhang,Jianli Zhou,Qixin Liang,Zheng Zhong

DOI: https://doi.org/10.1016/j.commatsci.2020.109691

IF: 3.572

2020-01-01

Computational Materials Science

Abstract:As a new class of one-dimensional (1D) transition-metal monochalcogenides (TMMs) nanowires (NWs), the recently synthesized MoS NWs exhibit potential applications in two-dimensional integrated circuit. However, their mechanical behaviors remain almost unexplored. In this paper, the mechanical behaviors of MoS NWs under tensile loading are studied by classical molecular dynamics simulations together with first-principles calculations. A novel phase transformation is observed in the MoS NWs when the strain applied to them is larger than a critical value, which results in tension-induced hardening in their tensile modulus. Due to the existence of phase transformation, a complicated mechanical response is observed in MoS NWs during the entire loading process, which successively experiences the linear, plateau, stress hardening and fracture stages. The influence of various factors including the strain rate and temperature on the mechanical properties of MoS NWs such as phase transformation, Young's modulus, fracture strength and fracture strain are also examined. The mechanical properties of MoS NWs obtained in this paper will be beneficial to their future applications in the semiconducting field. It is also expected that the results of the tension-induced phase transformation and its influence on the material properties observed in the present MoS NWs can be further extended to other 1D TMMs such as MoTe and SnSe NWs, since these 1D TMMs are found to possess the similar structure.
Nonlinear Static Bending and Forced Vibrations of Single-Layer MoS2 with Thermal Stress

Xiaolin Chen,Kun Huang,Yunbo Zhang

DOI: https://doi.org/10.3390/ma17081735

2024-04-10

Abstract:Single-layer molybdenum disulfide (MoS2) has been a research focus in recent years owing to its extensive potential applications. However, how to model the mechanical properties of MoS2 is an open question. In this study, we investigate the nonlinear static bending and forced vibrations of MoS2, subjected to boundary axial and thermal stresses using modified plate theory with independent in-plane and out-of-plane stiffnesses. First, two nonlinear ordinary differential equations are obtained using the Galerkin method to represent the nonlinear vibrations of the first two symmetrical modes. Second, we analyze nonlinear static bending by neglecting the inertial and damping terms of the two equations. Finally, we explore nonlinear forced vibrations using the method of multiple scales for the first- and third-order modes, and their 1:3 internal resonance. The main results are as follows: (1) The thermal stress and the axial compressive stress reduce the MoS2 stiffness significantly. (2) The bifurcation points of the load at the low-frequency primary resonance are much smaller than those at high frequency under single-mode vibrations. (3) Temperature has a more remarkable influence on the higher-order mode than the lower-order mode under the 1:3 internal resonance.
Theoretical Study on Electronic Properties of MoS2 Antidot Lattices

Li Shao,Guangde Chen,Honggang Ye,Yelong Wu,Haibo Niu,Youzhang Zhu

DOI: https://doi.org/10.1063/1.4896064

IF: 2.877

2014-01-01

Journal of Applied Physics

Abstract:Motivated by the state of the art method for etching hexagonal array holes in molybdenum disulfide (MoS2), the electronic properties of MoS2 antidot lattices (MoS2ALs) with zigzag edge were studied with first-principles calculations. Monolayer MoS2ALs are semiconducting and the band gaps converge to constant values as the supercell area increases, which can be attributed to the edge effect. Multilayer MoS2ALs and chemical adsorbed MoS2ALs by F atoms show metallic behavior, while the structure adsorbed with H atoms remains to be semiconducting with a tiny bandgap. Our results show that forming periodically repeating structures in MoS2 can develop a promising technique for engineering nano materials and offer new opportunities for designing MoS2-based nanoscale electronic devices and chemical sensors.
Robustness of transport properties to bending angles from edge-state contributions in flexible MoS2 nanoribbon

Haitao Yin,Xiaojie Liu,Bo Zhang,Yin Wang,Han Xu,Bairui Tao

DOI: https://doi.org/10.1088/1402-4896/acff4a

2023-10-02

Physica Scripta

Abstract:Monolayer molybdenum disulfide (MoS2) is considered a promising candidate for high-performance flexible nanoelectronics in the future. The robustness of conductivity against bending is critical for the stability of flexible electronic devices. We proposed an all-MoS2 nanoribbon-based junction consisting of a 2H semiconducting phase MoS2 nanoribbon sandwiched between two 1 T metallic phase MoS2 electrodes. The junction exhibits better conducting behavior due to the contribution of the nanoribbon’s edge states and is insensitive to the bending angle of the semiconducting region when the bending angle is close up to 30°. These results suggest that this system is very promising for flexible nanoelectronics.

Materials Science,Physics,Engineering
Electrical Properties of MoS2-Au Contact Based on the First Principle Study

Gengshu Wu,Haijun Lou,Xinnan Lin

DOI: https://doi.org/10.1109/edssc.2019.8754142

2019-01-01

Abstract:In this paper, the characteristics of top and edge contact of MoS 2 -Au interface are studied and compared in both equilibrium and non-equilibrium states based on the densityfunctional theory (DFT) and non-equilibrium Green's function transport theory (NEGF). Van der waals(vdW) interaction is considered in top contact. It is found that the current of edge contact is an order of magnitude larger than top contact at the same width. The density of states(DOS) of atoms in top contact have little relationship with position while it is closely related in edge contact due to more orbital overlaps. In the non-equilibrium state, the tunneling probability of the top contact increases after 0.5V while a peak of conductance at 0.22V is observed in edge contact because of sharpen Schottky barrier width. The results will provide a useful guide to design the novel MoS 2 semiconductor devices.
A Theoretical Investigation of Orientation-Dependent Transport in Monolayer MoS 2 Transistors at the Ballistic Limit

Fei Liu,Yijiao Wang,Xiaoyan Liu,Jian Wang,Hong Guo

DOI: https://doi.org/10.1109/led.2015.2472297

IF: 4.8157

2015-01-01

IEEE Electron Device Letters

Abstract:Device performance of monolayer MoS2 transistors is investigated by atomistic simulations within the non-equilibrium Green's function formalism. A strong dependence of quantum transport on MoS2 orientation is predicted. To a large extent, the orientation dependence is due to sub-band transport properties and the atomistic structure along the transport direction. A bandgap is found in the conduction band along armchair direction (AD), which plays a major role for the orientation-dependent transport. At the same time, different atomic arrangements along AD and zigzag direction have different depletion region lengths, which also contribute to the orientation-dependent transport. Orientation dependence of drain current exists in MoS2 FETs having different gate lengths.
Self-Bending Behavior and Varying Bending Stiffness of Black Phosphorus/Molybdenum Disulfide (BP/MoS2) Heterostructure

Dong Li,Yonggang Zheng,Hongwu Zhang,Hongfei Ye

DOI: https://doi.org/10.3390/nano12203635

IF: 5.3

2022-10-17

Nanomaterials

Abstract:Vertically-stacked black phosphorus/molybdenum disulfide (BP/MoS2) heterostructures have broad prospects in flexible electronics. Bending is a common and highly concerned deformation for these flexible devices. However, the discrepancy in structures and properties among the components of 2D heterostructures often induces complex bending deformations. Here, the bending behaviors of BP, MoS2 and BP/MoS2 are investigated based on a molecular dynamics simulation. Compared with the constant bending stiffness of individual BP and MoS2, that of BP/MoS2 varies with the bending angle. Notably, a self-bending configuration induced by the lattice mismatch and size difference is found in BP/MoS2. The corresponding self-bending amplitude depends on the degree of size difference of each component and the “soft/hard” competition between them. Moreover, the size difference leads to a weakened bending stiffness, which is ascribed to the reduction in interlayer interaction. A prediction formula is proposed to evaluate the bending stiffness of BP/MoS2 with the size difference. This finding reveals novel ways for regulating the bending properties of 2D heterostructures, including the bending angle, characteristic size and stacking order. It offers an effective strategy for designing flexible devices with tunable bending performance.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology,chemistry
Magnetic Properties of Mn-doped Monolayer MoS2

Bei Gao,Can Huang,Feng Zhu,Chun-Lan Ma,Yan Zhu

DOI: https://doi.org/10.1016/j.physleta.2021.127636

IF: 2.707

2021-01-01

Physics Letters A

Abstract:We use first-principles method to investigate the crystal structure, electronic structure and magnetic properties of Mn-doped MoS2 monolayer (Mo0.75Mn0.25S2). The spin-up electron states exhibit metallic properties, while the spin-down electron states exhibit insulating properties, which indicates the half-metallic properties of Mo0.75Mn0.25S2 monolayer. The doping of Mn atoms leads to the strong ferromagnetism of the system with the coupling between dopant Mn 3d orbitals via Mo 4d and S 3p states. Under the generalized Bloch condition, we explore the dispersion relation of Mo0.75Mn0.25S2 between the spin-spiral energy E((q) over right arrow) and the wave vector ((q) over right arrow) . The exchange coupling coefficient J(i)(i = 1, 2, 3, 4) is obtained through the Heisenberg interaction (HBI) model. It is found that although the first nearest-neighbor J(1) plays an important role, the second-nearest-neighbor interaction exchange coupling coefficient J(2) is non-negligible. (C) 2021 Elsevier B.V. All rights reserved.
Nonlinear Elastic Behavior of Two-Dimensional Molybdenum Disulfide

Ryan C. Cooper,Changgu Lee,Chris A. Marianetti,Xiaoding Wei,James Hone,Jeffrey W. Kysar

DOI: https://doi.org/10.1103/physrevb.87.035423

IF: 3.7

2013-01-01

Physical Review B

Abstract:This research explores the nonlinear elastic properties of two-dimensional molybdenum disulfide. We derive a thermodynamically rigorous nonlinear elastic constitutive equation and then calculate the nonlinear elastic response of two-dimensional MoS2 with first-principles density functional theory (DFT) calculations. The nonlinear elastic properties are used to predict the behavior of suspended monolayer MoS2 subjected to a spherical indenter load at finite strains in a multiple-length-scale finite element analysis model. The model is validated experimentally by indenting suspended circular MoS2 membranes with an atomic force microscope. We find that the two-dimensional Young's modulus and intrinsic strength of monolayer MoS2 are 130 and 16.5 N/m, respectively. The results approach Griffith's predicted intrinsic strength limit of sigma(int) similar to E/9, where E is the Young's modulus. This study reveals the predictive power of first-principles density functional theory in the derivation of nonlinear elastic properties of two-dimensional MoS2. Furthermore, the study bridges three main gaps that hinder understanding of material properties: DFT to finite element analysis, experimental results to DFT, and the nanoscale to the microscale. In bridging these three gaps, the experimental results validate the DFT calculations and the multiscale constitutive model. DOI: 10.1103/PhysRevB.87.035423
Crystal orientation-dependent mechanical property and structural phase transition of monolayer molybdenum disulfide

Qi-lin Xiong,Takayuki Kitamura,Zhen-huan Li

DOI: https://doi.org/10.1063/1.4996941

IF: 2.877

2017-10-07

Journal of Applied Physics

Abstract:By performing molecular dynamics simulations, we investigate the mechanical property and structural phase transition in monolayer molybdenum disulfide (MoS2) with different crystal orientations under uniaxial tensions systematically. The results show that both the mechanical property and structural phase transition are strongly dependent on the crystal orientation, specifically, for some crystal orientation angles lower than about 20°, the structural phase transition takes place with the plastic deformation; for other crystal orientation angles, plastic deformation cannot occur. Further studies have found that plastic deformation results from irreversible changes of the angles between the bonds, rather than the variation of bond length. Young's modulus increases while ultimate strength and fracture strain decrease with the increase of the crystal orientation angle. The critical strain at which the first structural phase transition occurs increases with the increase of the crystal orientation angle. The plastic deformation and the irreversible structural transition almost linearly increase with the decrease of the crystal orientation angle.

physics, applied
Junction-configuration-dependent interfacial electronic states of a monolayer MoS2/metal contact

Qinglong Fang,Xumei Zhao,Yu Hong Huang,Kewei Xu,Tai Min,Fei Ma

DOI: https://doi.org/10.1039/C8TC04341H

IF: 6.4

2019-01-01

Journal of Materials Chemistry C

Abstract:Electrical contacts are crucial to the high performances of electronic devices, and they become more prominent for the popular two-dimensional (2D) semiconductors because they commonly have high contact resistances and are sensitive to the interfacial states. In this paper, taking monolayer MoS2 as an example, first-principles calculations are done to study and predict the influences of the contact mode on the interfacial electronic states of monolayer MoS2/metal (metal = Mg, Al, In, Cu, Ag, Au, Pd, Sc, and Ti). It is found that the interfacial properties are determined by the matching degree between the electronic states of the monolayer MoS2 and metal electrodes. The top contact configuration is preferred for the monolayer MoS2/Sc system as a result of an extremely low Schottky barrier (0.086 eV) as compared to that (0.439 eV) in the edge contact configuration, however, the edge contact configuration is preferred for Ag, Cu, Au, and Pd electrodes. Furthermore, metal electrodes in the top contact configuration might usually result in n-type doping of monolayer MoS2, but lead to p-type doping in the edge contact configuration. The pinning factor S (0.257, −0.009, −0.132, and −0.172) of monolayer MoS2 in both contact modes is close to zero, suggesting a strong electronic pinning effect. The findings provide theoretical guidance for the selection of electrodes for high-performance 2D material based devices.
Mechanical Bending Induced Catalytic Activity Enhancement of Monolayer 1 T’-MoS2 for Hydrogen Evolution Reaction

Wenwu Shi,Zhiguo Wang,Yong Qing Fu

DOI: https://doi.org/10.1007/s11051-017-3996-2

IF: 2.533

2017-01-01

Journal of Nanoparticle Research

Abstract:In this paper, mechanisms behind enhancement of catalytic activity of MoS 2 mono-layer (three atomic layers) for hydrogen evolution reaction (HER) by mechanically applying bending strain were investigated using density functional theory. Results showed that with the increase of bending strains, the Gibbs free energy for hydrogen adsorption on the MoS 2 mono-layer was decreased from 0.18 to −0.04 eV and to 0.13 eV for the bend strains applied along the zigzag and armchair directions, respectively. The mechanism for the enhanced catalytic activity comes from the changes of density of electronic states near the Fermi energy level, which are induced by the changes of the Mo-S and Mo-Mo bonds upon bending. This report provides a new design methodology to improve the catalytic activity of catalysts based on two-dimensional transition metal dichalcogenides through a simple mechanical bending.
Structure and Dynamics of the Electronic Hetero-Interfaces in MoS2 by First-Principles Simulations.

Xiaolong Zou,Zhuhua Zhang,Xiaobin Chen,Boris I. Yakobson

DOI: https://doi.org/10.1021/acs.jpclett.0c00147

IF: 6.888

2020-01-01

The Journal of Physical Chemistry Letters

Abstract:The transformation of 2H-MoS2 from semiconducting 2H to metallic 1T phases is critical for its electrochemical and device applications, where the formation and dynamics of electronic heterostructures play a key role. Using first-principles calculations, we explore detailed atomic structures and migration processes of such interfaces. While armchair interfacial bonding is severely weakened by the distortion in 1T phase, stable structures form for either Mo- or S-orientated zigzag interfaces with low contact resistance. Different zigzag interfaces have distinct local bonding, which renders interface migration behaviors strongly anisotropic. For Mo-oriented interfaces, both a low formation energy and the migration barrier of the kinks make them prone to fast migration. In contrast, the S-oriented interfaces are more immobile due to the high formation energies of kinks and thus dominate the physical properties of the whole heterostructures. Our findings not only explain various experimental observations but also provide insights into phase transition behaviors in 2D MoS2.
PT-symmetry-protected Dirac States in Strain-Induced Hidden MoS2 Monolayer

Meiling Xu,Guohui Zhan,Siyu Liu,Dongqin Zhang,Xin Zhong,Ziyang Qu,Yinwei Li,Aijun Du,Haijun Zhang,Yanchao Wang

DOI: https://doi.org/10.1103/physrevb.100.235435

IF: 3.7

2019-01-01

Physical Review B

Abstract:Two-dimensional (2D) materials have recently attracted significant interest in condensed-matter physics and materials science due to rich intriguing physics and potential applications. Here, by first-principles calculations, we discover a phase of transition-metal dichalcogenides (MoS2 and its family) named the 1H' phase. We demonstrate that 1H' MoS2 monolayer has multiple topological phase transitions from a topologically trivial insulator state to a 2D type-II Dirac semimetal state, and then to a 2D ideal type-I semimetal state under a moderate tensile strain. The Dirac points are protected by the coexistence of space-inversion (P) and time-reversal (7) symmetry. Our results highlight a family of nonhoneycomb 2D Dirac semimetals with potential application in nanoelectronics.
Structures and phase transition of a MoS2 monolayer

Min Kan,Jinying Wang,X. W. Li,Shunhong Zhang,Yawei Li,Yushiyuki Kawazoe,Qiang Sun,Puru Jena

DOI: https://doi.org/10.1021/jp4076355

2014-01-01

Abstract:As an inorganic cousin of graphene, MoS2 monolayer has attracted considerable attention. However, a full understanding of its structure and stability is still lacking due to its dependence on experimental synthesis conditions. Using first-principle calculations combined with Boltzmann transport equation, we have extensively studied the geometry, energetics, electronic structure, optical absorption, and carrier mobility of various phases of MoS2. We have not only identified the stable phases of a MoS2 monolayer, but also clarified the specific conditions under which different phases are formed. The possible pathways for transitions among different phases are also discussed.

The Study of Bending Properties of Monolayer MoS2 in Non-Collinear Electrodes Using First Principles Theory

On the Electronic Structure of 2H-MoS2: Correlating DFT Calculations and In-Situ Mechanical Bending on TEM

First-Principles Study of Electronic and Elastic Properties of Hexagonal Layered Crystal MoS2 Under Pressure

Edge Reconstruction-Dependent Growth Kinetics of MoS2

Doping MoS2 Monolayer with Nonmetal Atoms to Tune Its Electronic and Magnetic Properties, and Chemical Activity: a Computational Study

On the bending of rectangular atomic monolayers along different directions: an ab initio study

Mechanical Behaviors of MoS Nanowires under Tension from Molecular Dynamics Simulations

Nonlinear Static Bending and Forced Vibrations of Single-Layer MoS2 with Thermal Stress

Theoretical Study on Electronic Properties of MoS2 Antidot Lattices

Robustness of transport properties to bending angles from edge-state contributions in flexible MoS2 nanoribbon

Electrical Properties of MoS2-Au Contact Based on the First Principle Study

A Theoretical Investigation of Orientation-Dependent Transport in Monolayer MoS 2 Transistors at the Ballistic Limit

Self-Bending Behavior and Varying Bending Stiffness of Black Phosphorus/Molybdenum Disulfide (BP/MoS2) Heterostructure

Magnetic Properties of Mn-doped Monolayer MoS2

Nonlinear Elastic Behavior of Two-Dimensional Molybdenum Disulfide

Crystal orientation-dependent mechanical property and structural phase transition of monolayer molybdenum disulfide

Junction-configuration-dependent interfacial electronic states of a monolayer MoS2/metal contact

Mechanical Bending Induced Catalytic Activity Enhancement of Monolayer 1 T’-MoS2 for Hydrogen Evolution Reaction

Structure and Dynamics of the Electronic Hetero-Interfaces in MoS2 by First-Principles Simulations.

PT-symmetry-protected Dirac States in Strain-Induced Hidden MoS2 Monolayer

Structures and phase transition of a MoS2 monolayer