Abstract:Due to the separate memory and computation units in traditional von Neumann architecture, massive data transfer dominates the overall computing system's power and latency, known as the "Memory-Wall" issue. Especially with ever-increasing deep learning-based AI model size and computing complexity, it becomes the bottleneck for state-of-the-art AI computing systems. To address this challenge, in-memory computing (IMC)-based Neural Network accelerators have been widely investigated to support AI computing within memory. However, most of those works focus only on inference. The on-device training and continual learning have not been well explored yet. In this work, for the first time, we introduce on-device continual learning with STT-assisted-SOT (SAS) magnetoresistive random-access memory (MRAM)-based IMC system. On the hardware side, we have fabricated a STT-assisted-SOT MRAM (SAS-MRAM) device prototype with 4 magnetic tunnel junctions (MTJs, each at 100 nm x50 nm) sharing a common heavy metal layer, achieving significantly improved memory writing and area efficiency compared to traditional SOT-MRAM. Next, we designed fully digital IMC circuits with our SAS-MRAM to support both neural network inference and on-device learning. To enable efficient on-device continual learning for new task data, we present an 8-bit integer (INT8)-based continual learning algorithm that utilizes our SAS-MRAM IMC-supported bit-serial digital in-memory convolution operations to train a small parallel reprogramming network (Rep-Net) while freezing the major backbone model. Extensive studies have been presented based on our fabricated SAS-MRAM device prototype, cross-layer device-circuit benchmarking and simulation, as well as the on-device continual learning system evaluation.

MRAM Acceleration Core for Vector Matrix Multiplication and XNOR-Binarized Neural Network Inference

Accelerating Low Bit-Width Deep Convolution Neural Network in MRAM.

MRIMA: an MRAM-Based In-Memory Accelerator

A Universal RRAM-Based DNN Accelerator with Programmable Crossbars Beyond MVM Operator

An In-Memory Computing Multiply-and-accumulate Circuit Based on Ternary STT-MRAMs for Convolutional Neural Networks.

APIM: An Antiferromagnetic MRAM-Based Processing-In-Memory System for Efficient Bit-level Operations of Quantized Convolutional Neural Networks

A Multilevel Cell STT-MRAM-Based Computing In-Memory Accelerator for Binary Convolutional Neural Network

Hardware Implementation Of Rram Based Binarized Neural Networks

A 3d Multi-Layer Cmos-Rram Accelerator for Neural Network

High-Throughput In-Memory Computing for Binary Deep Neural Networks with Monolithically Integrated RRAM and 90nm CMOS

Proposal of Analog In-Memory Computing with Magnified Tunnel Magnetoresistance Ratio and Universal STT-MRAM Cell

An Energy Efficient Computing-in-Memory Accelerator With 1T2R Cell and Fully Analog Processing for Edge AI Applications

Toward Energy Efficient STT-MRAM-based Near Memory Computing Architecture for Embedded Systems

On-Device Continual Learning with STT-Assisted-SOT MRAM Based In-Memory Computing

NAND-SPIN-based processing-in-MRAM architecture for convolutional neural network acceleration

SOT-MRAM-Based Design for Energy-Efficient and Reliable Binary Neural Network Acceleration

Area-Aware Optimization of MRAM Crossbar Array Bit-Cell for In-Memory Computing

Bit-Transformer: Transforming Bit-level Sparsity into Higher Preformance in ReRAM-based Accelerator

Technological Exploration of Rram Crossbar Array for Matrix-Vector Multiplication

Enabling Resistive-RAM-based Activation Functions for Deep Neural Network Acceleration

An Improved Hardware Accelaration Architecture of Binary Neural Network With 1T1R Array Based Forward/Backward Propagation Module