Study on Time Domain Characteristics of Memristive RLC Series Circuits
XiaoYuan Wang,Herbert H. C. Iu,GuangYi Wang,Wei Liu
DOI: https://doi.org/10.1007/s00034-016-0250-6
IF: 2.311
2016-01-01
Circuits Systems and Signal Processing
Abstract:The notion of memristive system was first proposed in 2009. This concept of memory element has been extended from memristors \((\hbox {R}_{\mathrm{M}})\) to memcapacitors \((\hbox {C}_{\mathrm{M}})\) and meminductors \((\hbox {L}_{\mathrm{M}})\). Currently, the above elements are not available as off-the-shelf components. Therefore, based on the realization of a light-dependent resistor (LDR), memristor analog model, memcapacitor and meminductor analog circuit models based on \(\hbox {R}_{\mathrm{M}}-\hbox {C}_{\mathrm{M}}\) and \(\hbox {R}_{\mathrm{M}}-\hbox {L}_{\mathrm{M}}\) converters are first introduced. Then, instead of the traditional resistor, capacitor, and inductor, memristor-, memcapacitor-, and meminductor-equivalent circuits are used to determine the time domain characteristics of the RLC-mode circuits with mem-elements. These circuits are discussed in detail, and in particular, the phenomena caused by the memory characteristics of the mem-elements are studied. This research provides an important reference for further research into mem-element applications in circuit theory.