Abstract:The low Seebeck coefficient and the high thermal conductivity deteriorate the thermoelectric properties of GeTe. Herein, the Seebeck coefficient is enhanced by promoting band convergency induced by the strongly correlated d, f electrons of rare earth elements. The doping of Pb and Bi causes avoided crossing and hierarchical structure, strengthening the full‐spectrum scattering of phonons and decelerating the sound velocity. As a highly promising thermoelectric material in the mid‐temperature region, pristine GeTe shows deteriorated thermoelectric properties due to the low Seebeck coefficient and the intrinsic high thermal conductivity. Herein, it is discovered that the introduction of strongly correlated d, f electrons by alloying rare‐earth atoms at Ge sites will increase the band effective mass and promote band convergency, which can largely improve the electric transport property. Moreover, the heavy atoms (Pb, Bi) doping induces optical phonon softening and the avoided crossing between acoustic and optical phonon branches, decelerating both optical and acoustic phonon velocities. The modulated composition wave from the fluctuated multi‐component distribution introduces a complicated hierarchical structure including point defects and nanoprecipitates, which provides all‐scale scattering sources for heat‐carrying phonons and results in low lattice thermal conductivity. Consequently, a high zT of 2.4 at 800 K can be obtained in the Ge0.86Pb0.09Bi0.03Ce0.005Te sample due to the combination of strong correlation for d, f electrons and the full‐spectrum scattering for phonons. This work provides an effective strategy to increase the thermoelectric performance of IV–VI compounds by combining the modulated band structure and the softening phonon dispersion.

Realizing High Thermoelectric Performance in GeTe Through Optimizing Ge Vacancies and Manipulating Ge Precipitates

Achieving High Carrier Mobility And Thermal Stability in Plainified Rhombohedral GeTe Thermoelectric Materials with zT > 2

Medium-temperature thermoelectric GeTe: vacancy suppression and band structure engineering leading to high performance

Enhancing thermoelectric performance in GeTe through Ge enrichment regulation and AgCuTe alloying

Tailoring band structure and Ge precipitates through Er and Sb/Bi co-doping to realize high thermoelectric performance in GeTe

Realizing High Thermoelectric Performance in GeTe‐Based Supersaturated Solid Solutions

Electrical and Thermal Transport Properties of Ge1–xPbxCuySbyTeSe2y

Achieving high thermoelectric quality factor toward high figure of merit in GeTe

Boosting the thermoelectric performance of GeTe via vacancy control and engineering sintering parameters

Decoupling Carrier-Phonon Scattering Boosts the Thermoelectric Performance of N-Type GeTe-Based Materials.

Valence Band Modification and Enhanced Phonon‐Phonon Interactions for High Thermoelectric Performance in GeTe

Functionally Separated Electronic Band Engineering Via Multi-Element Doping Plus High-Density Defects Advances Board-Temperature-range Thermoelectric Performance in GeTe

Vacancy Suppression Induced Synergetic Optimization of Thermoelectric Performance in Sb-Doped GeTe Evidenced by Positron Annihilation Spectroscopy

High Performance GeTe Thermoelectrics Enabled by Lattice Strain Construction

Simultaneous Suppression of Phonon Transport and Carrier Concentration for Efficient Rhombohedral GeTe Thermoelectric

Intrinsic vacancy suppression and band convergence to enhance thermoelectric performance of (Ge, Bi, Sb)Te crystals

Achieving Ultralow Lattice Thermal Conductivity and High Thermoelectric Performance in GeTe Alloys Via Introducing Cu2Te Nanocrystals and Resonant Level Doping.

High Thermoelectric Performance Achieved in Sb-Doped GeTe by Manipulating Carrier Concentration and Nanoscale Twin Grains

Simultaneous Optimization of Carrier Concentration and Alloy Scattering for Ultrahigh Performance GeTe Thermoelectrics

Modifying Roles of CuSbSe2 in Realizing High Thermoelectric Performance of GeTe

Enhanced near-room-temperature thermoelectric performance in GeTe