Abstract:This work constructs transition metal sulfides with different sulfur vacancy concentrations through DFT model prediction and experimental validation, further confirming the effect of vacancy defect engineering on the electrochemical performance of electrode materials. Therefore, this modulation of sulfur vacancy concentration by vacancy defects contributes to the construction of electrode materials with excellent performance for energy applications. Transition bimetallic sulfides show significant promise for energy‐related applications because of their plentiful active sites and synergistic redox activity. However, limited pore size and low‐conductivity issues hinder their application. The structure of NiCo–S with rich sulfur vacancies is first predicted by density functional theory (DFT) calculations. Different sulfur vacancy concentrations are modeled by DFT calculations, and the results confirm that sulfur vacancies enhance the conductivity of the electrode material and are more beneficial for the adsorption of OH* species. It is verified by the differential charge density that the electric field formed on the surface of the electrode can lead to strong interfacial interactions by electron aggregation, which promotes electron/ion transfer kinetics. Furthermore, NiCo–S nanosheets are prepared on carbon cloth enriched with different concentrations of sulfur vacancies (denoted as NiCo‐Sv‐x, with x representing the concentration of sulfur vacancies) by sulfide etching NiCo‐MOF and annealing under H2/Ar atmosphere. The NiCo‐Sv‐x electrodes obtained are applied to the cathode of supercapacitors and the anode of the oxygen evolution reaction. Through combining experimental and theoretical analysis, the effect of vacancy defect engineering on the electrochemical performance of the electrode materials is further confirmed.

Performance Improvement of Multilayered SnS2 Field Effect Transistors Through Synergistic Effect of Vacancy Repairing and Electron Doping Introduced by EDTA

Influence of Solid-State Electrolyte on 2D SnS2 Field Effect Transistors

Performance Enhancement of 2D Tin-Halide Perovskite Transistors via Molecule-Assisted Grain Boundary Passivation and Hole Doping

A Facile and Effective Method for Patching Sulfur Vacancies of WS2 Via Nitrogen Plasma Treatment

S or N-monodoping and S,N-codoping effect on electronic structure and electrochemical performance of tin dioxide: Simulation calculation and experiment validation

Enhancing the Contact Performance of Two-Dimensional Metals/In2S3 Junctions by the Self-Repair of Sulfur Vacancies in Air

Enhancing the Contact Performance of Two-Dimensional Metals/In 2 S 3 Junctions by the Self-Repair of Sulfur Vacancies in Air

Bimetallic Sulfides with Vacancy Modulation Exhibit Enhanced Electrochemical Performance

Enhanced Performance of P-Type SnO X Thin Film Transistors Through Defect Compensation

Two-dimensional Plumbum-Doped Tin Diselenide Monolayer Transistor with High On/off Ratio

Amelioration of interfacial combination and suppression of oxygen vacancies for high performance environmentally friendly electrospun SnYO nanofiber field-effect transistors

Optimizing 2D-metal contact in layered Tin-selenide via native oxide modulation

Controllable Defect Engineering Enhanced Bond Strength for Stable Electrochemical Energy Storage

Modeling and Simulation Investigation of Ferroelectric-Based Electrostatic Doping for Tunnelling Field-Effect Transistor.

Boosting Supercapacitive Performance of SnS2 Via Trace Pb Doping

Se-Vacancy Healing with Substitutional Oxygen in WSe2 for High-Mobility p-Type Field-Effect Transistors

Electrical Transport Properties of Few-Layer SnS2 Field-effect Transistors

Spatially controlled doping of two-dimensional SnS 2 through intercalation for electronics

Enhancing the Performance of MoS2 Field-Effect Transistors Using Self-Assembled Monolayers: A Promising Strategy to Alleviate Dielectric Layer Scattering and Improve Device Performance

Anchoring SnS2 on TiC/C Backbone to Promote Sodium Ion Storage by Phosphate Ion Doping.

Optimization of Defects in Large-Area Synthetic MoS2 Thin Films by CS2 Treatment for Switching and Sensing Devices