Observation of Gap Phenomena and Development Processing Technology for ECDM of Sapphire

Chun-Hao Yang,Shao-Hua Yu,Hai-Ping Tsui

DOI: https://doi.org/10.3390/pr12061149

IF: 3.5

2024-06-03

Processes

Abstract:The main purpose of this study was to develop observation techniques and processing technology for the electrochemical discharge machining (ECDM) of sapphire wafers. To measure the effect of gas-film thickness, discharge-spark conditions, and droplet sliding frequency on machining quality and efficiency in ECDM, this research utilized high-speed cameras to observe the gas film thickness and formation of the gas film during ECDM. Additionally, this study observed the machining-gap phenomena during ECDM. The formation mechanism and machining characteristics of the gas film were understood through experiments. The machining parameters included the liquid level, working voltage, rotation speed, and duty factor. This study analyzed and discussed the effect of each machining parameter on the gas-film thickness, current, electrode consumption, and droplet sliding frequency. Moreover, this study aimed to obtain optimized machining parameters to overcome the difficulty of machining sapphire. The experimental results indicated that utilizing a high-speed camera to capture the phenomena between electrodes during electrochemical discharge could effectively observe the gas-film thickness and the coverage of the gas film. A higher bubble coalescence rate enhanced the machining capability and reduced the lateral discharge. Therefore, this study could obtain better machining-hole depths through observation and analysis to improve gas-film stability and machining capability. This study demonstrated that a liquid level of 700 μm, a working voltage of 48 V, a duty factor of 50%, and a tool electrode rotational speed of 200 rpm could achieve a hole depth of 86.7 μm and a hole diameter of 129.5 μm.

engineering, chemical

What problem does this paper attempt to address?

This paper aims to solve the processing problems of sapphire materials in electrochemical discharge machining (ECDM). Specifically, the main purpose of the research is to develop observation techniques and processing techniques to improve the ECDM processing quality and efficiency of sapphire wafers. Through high - speed cameras, the research observes the gas film thickness, the gas film formation process and the machining gap phenomenon, and analyzes the influence of processing parameters such as liquid level, working voltage, rotation speed and duty cycle on gas film thickness, current, electrode loss and droplet - slide frequency. The ultimate goal is to optimize these processing parameters, overcome the difficulties in sapphire processing, and achieve deeper hole processing.

### Main research contents:
1. **Development of observation techniques**:
- Use high - speed cameras to observe the gas film thickness and the gas film formation process.
- Observe the machining gap phenomenon to understand the formation mechanism and machining characteristics of the gas film.

2. **Development of processing techniques**:
- Analyze the influence of processing parameters such as liquid level, working voltage, rotation speed and duty cycle on gas film thickness, current, electrode loss and droplet - slide frequency.
- Optimize processing parameters to improve processing quality and efficiency.

### Experimental methods:
- **Experimental materials**:
- Sapphire wafers: 2 - inch in diameter, 200 µm in thickness, with the main chemical composition of Al₂O₃ and the crystal orientation of C - plane (0001).
- Tool electrode material: tungsten carbide, with the tool electrode diameter of 0.05 mm and the length of 0.9 mm.

- **Experimental devices**:
- High - speed cameras are used to capture the phenomena of bubble generation, gas film formation and between electrodes.
- CNC micro - electro - discharge machining tools are installed with tool electrodes, connected to power supplies and signal generators to generate bias pulse voltages.
- Use N - type metal - oxide - semiconductor field - effect transistors (MOSFETs) to generate 10 V bias pulse voltages.

- **Experimental parameters**:
- Single - factor experimental method is used to study the influence of liquid level, working voltage, rotation speed and duty cycle on machining characteristics respectively.
- The initial gap between the workpiece and the tool electrode is set to 5 µm, and the total machining stroke is 125 µm.
- Data measurement is carried out when the machining depth reaches 5 µm, 45 µm, 85 µm and 125 µm.

### Experimental results:
- High - speed cameras can effectively observe the gas film thickness and the gas film coverage.
- A higher bubble coalescence rate enhances the machining ability and reduces lateral discharges.
- The optimized processing parameters (liquid level of 700 µm, working voltage of 48 V, duty cycle of 50%, tool electrode rotation speed of 200 rpm) can achieve the machining effect of a hole depth of 86.7 µm and a hole diameter of 129.5 µm.

### Conclusions:
Through high - speed camera observation and analysis, this research reveals the influence of factors such as gas film thickness and bubble coalescence rate on the ECDM processing quality of sapphire, and proposes optimized processing parameters, which significantly improve the machining depth and stability. This provides important references and technical support for the efficient and precise processing of sapphire materials.