Growth of Monolayer MoS2 Films in a Quasi-Closed Crucible Encapsulated Substrates by Chemical Vapor Deposition

Yong Yang,Hongbin Pu,Tao Lin,Lianbi Li,Shan Zhang,Gaopeng Sun
DOI: https://doi.org/10.1016/j.cplett.2017.05.015
IF: 2.719
2017-01-01
Chemical Physics Letters
Abstract:Monolayer molybdenum disulfide (m-MoS2) has attracted significant interest due to its unique electronic and optical properties. Herein, we report the successful fabrication of high quality and continuous m-MoS2 films in a quasi-closed crucible encapsulated substrates via a three-zone chemical vapor deposition (CVD) system. Quasi-closed crucible lowers the concentration of precursors around substrates and makes the sulfurization rate gentle, which is beneficial for invariable m-MoS2 growth. Characterization results indicate that as-grown m-MoS2 films are of high crystallinity and high quality comparable to the exfoliated MoS2. This approach is also adapted to the growth of other transition metal dichalcogenides.
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