Abstract:Topological quantum materials exhibit fascinating properties1–3, with important applications for dissipationless electronics and fault-tolerant quantum computers4,5. Manipulating the topological invariants in these materials would allow the development of topological switching applications analogous to switching of transistors6. Lattice strain provides the most natural means of tuning these topological invariants because it directly modifies the electron–ion interactions and potentially alters the underlying crystalline symmetry on which the topological properties depend7–9. However, conventional means of applying strain through heteroepitaxial lattice mismatch10 and dislocations11 are not extendable to controllable time-varying protocols, which are required in transistors. Integration into a functional device requires the ability to go beyond the robust, topologically protected properties of materials and to manipulate the topology at high speeds. Here we use crystallographic measurements by relativistic electron diffraction to demonstrate that terahertz light pulses can be used to induce terahertz-frequency interlayer shear strain with large strain amplitude in the Weyl semimetal WTe2, leading to a topologically distinct metastable phase. Separate nonlinear optical measurements indicate that this transition is associated with a symmetry change to a centrosymmetric, topologically trivial phase. We further show that such shear strain provides an ultrafast, energy-efficient way of inducing robust, well separated Weyl points or of annihilating all Weyl points of opposite chirality. This work demonstrates possibilities for ultrafast manipulation of the topological properties of solids and for the development of a topological switch operating at terahertz frequencies.

Anisotropic ultrafast spin/valley dynamics in WTe2 films

Observation of an anisotropic ultrafast spin relaxation process in large-area WTe<sub>2</sub> films

Room-temperature nanoseconds spin relaxation in WTe2 and MoTe2 thin films

Magnetically-Sensitive Valley Polarization Reversal and Revival of Defect-Localized Excitons in WSe2-WS2

Ultrafast Investigation of Room Temperature Valley Polarization in “optical Bilayer” WS 2

Long valley lifetime of free carriers in monolayer WSe2

Observation of the out-of-plane polarized spin current from CVD grown WTe2

An ultrafast symmetry switch in a Weyl semimetal

Intravalley Spin-Flip Relaxation Dynamics in Single-Layer WS2

Direct observation of intravalley spin relaxation in single-layer WS$_2$

Observation of Ultralong Valley Lifetime in WSe2/MoS2 Heterostructures

Gate controlled spin-valley locking of resident carriers in WSe2 monolayers

Spin manipulation by giant valley-Zeeman spin-orbit field in atom-thick WSe2

Valley-spin polarization at zero magnetic field induced by strong hole-hole interactions in monolayer WSe$_2$

Ultrafast Generation of Pseudo-magnetic Field for Valley Excitons in WSe2 Monolayers

Unconventional charge-spin conversion in Weyl-semimetal WTe2

Spin Relaxation and Diffusion in Monolayer 1T'-WTe$_2$ from First-Principles

Ultrafast dynamics of spin relaxation in monolayer WSe2 and WSe2/graphene heterojunction

Electrically Tunable Valley Dynamics in Twisted WSe_{2}/WSe_{2} Bilayers

Long-Lived Nanosecond Spin Relaxation And Spin Coherence Of Electrons In Monolayer Mos2 And Ws2

Generation and evolution of spin-, valley- and layer-polarized excited carriers in inversion-symmetric WSe2