Buried interface modified by guanidinium iodide for enhanced efficiency and stability of perovskite solar cells

Zisheng Su,Yue Hu,Dasheng Su,Guangping Yao,Yaoming Xiao,Lidan Wang
DOI: https://doi.org/10.2139/ssrn.4401790
IF: 3.754
2023-10-01
Optical Materials
Abstract:A guanidinium iodide layer is deposited on SnO 2 to modify the buried interface of SnO 2 /CH 3 NH 3 PbI 3 in perovskite solar cells . It is found that hydrogen bonds are formed between GAI and SnO 2 , which not only reduce the defects of SnO 2 but also anchor the GAI molecules on the surface of SnO 2 and then functioned as nucleation sites to form a 2D perovskite layer at the SnO 2 /CH 3 NH 3 PbI 3 interface. Moreover, GAI molecules are demonstrated to distribute at the grain boundaries in the whole perovskite film, and hydrogen bonds are formed between GAI and perovskite. These hydrogen bonds effectively suppress the charge trapping and recombination regions induced by the under-coordinated iodine species. A CH 3 NH 3 Cl additive is found to be essential in the perovskite precursor, which manipulates the crystal growth dynamic and the vertical crystallization and hence the improved morphology of the perovskite films. Dramatically increased efficiency and stability are demonstrated in the perovskite solar cells. The optimized device shows a more than 20% higher PCE than the reference device. Besides, the device also remains 80% of its initial efficiency after storage for 60 days, suggesting the robust of this device.
materials science, multidisciplinary,optics
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