Abstract:With the rapid development of key industries such as new energy vehicles, smart homes, smart phones and consumer grade drones, the demand for high performance miniature micro- pressure sensors is also growing promptly. At prssent, most of the pressure sensors of this type adopt a C-type structure, and the thickness of the sensitive diaphragm needs to be continuously thinned in order to improve the sensitivity of this type sensor, which leads to its sensitivity to etching errors and makes it difficult to ensure the linearity of the pressure sensor. Based on this, we designed a miniature micro-pressure half active Wheatstone bridge piezoresistive pressure sensor with C-type square diaphragm structure, whose area is reduced by shortening the number of leads and pads, through ion impantation on the surface of the diaphragm to create a piezoresistors, using deep reactive ion etching (DRIE) technology to release the pressure sensitive diaphragm with length of 460 μm × 460 μm, thinkness of 7.5 μm. The buried oxygen layer in the SOI(silicon on insulator) can play a role of stopping the etching, which assures the uniformity of the released sensitive diaphragm and the non-linear errors of the sensor while maintains its sensitivity. In this paper, the influence of piezoresistor position offset on the performance of the pressure sensor is analyzed by means of simulation, which improves the accuracy of the designed model and guarantees its performance parameters can meet the design indicators. Finally, the static characteristics of the sensor is calibrated. The experimental results show that the sensitivity of the sensor is up to 0.538 mV kPa-1/3.5 V in the range of 40 kPa at room temperature, and the non-linear error is only 0.386 % FS. This study provides some new ideas and references for the design work of high performance micro-pressure sensors.

Characterization and Analysis of a Novel Structural SOI Piezoresistive Pressure Sensor with High Sensitivity and Linearity

A Soft Piezoresistive Pressure Sensor Based on Porous Conductive CB/PDMS Composite

An SOI-Structured Piezoresistive Differential Pressure Sensor with High Performance

A novel pressure sensor design for low pressure ranges

A Single-Side Micromachined MPa-Scale High-Temperature Pressure Sensor

A novel 0-5 kpa piezoresistive pressure sensor based on peninsula structure diaphragm

A piezoresistive pressure sensor with centralized piezoresistors and a diamond-shape composite diaphragm

A Novel Pressure Microsensor with 30- $\mu \Hbox{m}$-Thick Diaphragm and Meander-Shaped Piezoresistors Partially Distributed on High-Stress Bulk Silicon Region

Design and fabrication of a tiny micro-pressure sensor with improved linearity and sensitivity

A Novel 0-3 Kpa Piezoresistive Pressure Sensor Based On A Shuriken-Structured Diapragm

Liquid-free, piezoresistive, SOI-based pressure sensor for high temperature measurements up to 400 °C

Design and Analysis of High-Performance and Small-Size Piezoresistive Pressure Sensors

A novel SOI pressure sensor for high temperature application

The Design and Analysis of Piezoresistive Shuriken-Structured Diaphragm Micro-Pressure Sensors

High-temperature piezoresistive pressure sensor based on implantation of oxygen into silicon wafer

High Sensitive and Linear Pressure Sensor for Ultra-low Pressure Measurement

A High-Temperature Piezoresistive Pressure Sensor with an Integrated Signal-Conditioning Circuit

A high-temperature silicon-on-insulator stress sensor

Design, Fabrication, and Calibration of a Piezoresistive Stress Sensor on SOI Wafers for Electronic Packaging Applications

A Novel Structure of Pressure Sensors

A high pressure sensor with circular diaphragm based on MEMS technology