A Novel Structure of Pressure Sensors

YL WANG,XY ZHENG,LT LIU,ZJ LI
DOI: https://doi.org/10.1109/16.119017
IF: 3.1
1991-01-01
IEEE Transactions on Electron Devices
Abstract:A novel structure for discrete and integrated pressure sensors is proposed and realized. A piezoresistive bridge pressure sensor and a pressure-sensitive MOS oscillator on this structure were fabricated and tested. The fully MOS-compatible technology, high-grade performance, intrinsically low-temperature coefficient, and feasibility of fabrication are described to show the advantages of the new structure for production of discrete and, in particular, integrated pressure sensors as well as large-area sensor arrays.
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