Abstract:Transparent electronic materials are increasingly in demand for a variety of optoelectronic applications. BaSnO3 is a semiconducting oxide with a large band gap of more than 3.1 eV. Recently, we discovered that La doped BaSnO3 exhibits unusually high electrical mobility of 320 cm^2(Vs)^-1 at room temperature and superior thermal stability at high temperatures [H. J. Kim et al. Appl. Phys. Express. 5, 061102 (2012)]. Following that work, we report various physical properties of (Ba,La)SnO3 single crystals and films including temperature-dependent transport and phonon properties, optical properties and first-principles calculations. We find that almost doping-independent mobility of 200-300 cm^2(Vs)^-1 is realized in the single crystals in a broad doping range from 1.0x10^19 to 4.0x10^20 cm^-3. Moreover, the conductivity of ~10^4 ohm^-1cm^-1 reached at the latter carrier density is comparable to the highest value. We attribute the high mobility to several physical properties of (Ba,La)SnO3: a small effective mass coming from the ideal Sn-O-Sn bonding, small disorder effects due to the doping away from the SnO2 conduction channel, and reduced carrier scattering due to the high dielectric constant. The observation of a reduced mobility of ~70 cm^2(Vs)^-1 in the film is mainly attributed to additional carrier-scatterings which are presumably created by the lattice mismatch between the substrate SrTiO3 and (Ba,La)SnO3. The main optical gap of (Ba,La)SnO3 single crystals remained at about 3.33 eV and the in-gap states only slightly increased, thus maintaining optical transparency in the visible region. Based on these, we suggest that the doped BaSnO3 system holds great potential for realizing all perovskite-based, transparent high-frequency high-power functional devices as well as highly mobile two-dimensional electron gas via interface control of heterostructured films.

Electron mobility of SnO2 from first principles

Electron mobility of SnO2 from first principles

Electron and Hole Mobility of SnO2 from Full-Band Electron-Phonon and Ionized Impurity Scattering Computations

First-principles analysis of electron transport in BaSnO$_3$

Combined experimental-theoretical study of electron mobility-limiting mechanisms in SrSnO3

Plasma-assisted molecular beam epitaxy of SnO(001) films: Metastability, hole transport properties, Seebeck coefficient, and effective hole mass

Physical properties of transparent perovskite oxides (Ba,La)SnO3 with high electrical mobility at room temperature

Electronic and optical properties of W-doped SnO2 from first-principles calculations

The origin of the n-type conductivity for Ta-doped SnO 2 : Density functional theory study

Resolving Different Scattering Effects on the Thermal and Electrical Transport in Doped SnSe

Study of electronic structure and optical properties of Sn0.9375TM0.0625O2 (TM=Mo, Ru, Rh, Pd, Ag) based on the first-principles

Structural and Electronic Properties of SnO2 Doped with Non-Metal Elements

Drude's model calculation rule on electrical transport in Sb-doped SnO2 thin films, deposited via sol–gel

Understanding the role of Niobium, Molybdenum and Tungsten in realizing of the transparent n-type SnO2

Resonant Ta Doping for Enhanced Mobility in Transparent Conducting SnO2

Structural and electronic properties of SnO 2 doped with non-metal elements

First-principles Study of the Drift and Hall Mobilities of Perovskite BaSnO3

Electronic conduction properties of indium tin oxide: single-particle and many-body transport

Insight into the High Mobility and Stability of In2 O3 :H Film

Electronic structure and optical properties of Sb-doped SnO2

The lattice and electronic thermal conductivity of doped SnSe: a first-principles study