Fully Transparent Organic Transistors with Junction-Free Metallic Network Electrodes

Ke Pei,Zongrong Wang,Xiaochen Ren,Zhichao Zhang,Boyu Peng,Paddy K. L. Chan
DOI: https://doi.org/10.1063/1.4927445
IF: 4
2015-01-01
Applied Physics Letters
Abstract:We utilize highly transparent, junction-free metal network electrodes to fabricate fully transparent organic field effect transistors (OFETs). The patterned transparent Ag networks are developed by polymer crack template with adjustable line width and density. Sheet resistance of the network is 6.8 Ω/sq and optical transparency in the whole visible range is higher than 80%. The bottom contact OFETs with DNTT active layer and parylene-C dielectric insulator show a maximum field-effect mobility of 0.13 cm2/V s (average mobility is 0.12 cm2/V s) and on/off ratio is higher than 107. The current OFETs show great potential for applications in the next generation of transparent and flexible electronics.
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