Structural and Photoluminescence Study of Zinc Oxide Thin Films Grown by Laser Induced Plasma

Usman Ilyas,R. S. Rawat,G. Roshan,T. L. Tan,P. Lee,S. V. Springham,R. Chen,H. D. Sun,Li Fengji,Sam Zhang
2012-01-01
Abstract:The structural, compositional and optical properties of thin films grown by laser-induced plasma (LIP) were studied as a function of post-deposition annealing. Nanocrystalline powder of ZnO was prepared through a wet chemical method using zinc acetate dihydrate (Zn(CH3COO)2.2H2O) and potassium hydroxide (KOH) as precursors. The X-ray diffraction (XRD) spectra showed the improved crystalline quality at elevated temperatures with a temperature-dependent variation in lattice parameters, pointing the activation of zinc and oxygen related point defects at various annealing temperatures. X-ray photoelectron spectroscopy (XPS) of Auger Zn L3M4,5M4,5 and O 1s peaks revealed the reversion of zinc interstitials to crystal lattice as zinc lattice sites at different annealing temperatures leading to strong Zn-O bonding. The origins of near band edge (NBE) and deep level emission (DLE) in room temperature photoluminescence (PL) spectra, pointing out the activation of temperature-dependent intrinsic defects states are briefly discussed. Among all the thin films under investigation, ZnO thin films annealed at 700 °C were found to have strong Zn-O bonding with maximum contribution of oxygen interstitials that is favorable to form un-doped p-type ZnO essential for optoelectronic and spintronic devices.
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