Impact of Double Al0.1Ga0.9As Barrier on n-i-n InAs/GaAs Quantum Dot Infrared Photodetectors

Baoning Lai,Yunjiang Jin,Lin Liu,Ying Yu,Siyuan Yu

2019-01-01

Abstract:AlGaAs Barrier is helpful to decrease the thermal motion of carriers. In this work, we compare the performance of the single barrier QDIP with double barrier QDIP.

What problem does this paper attempt to address?

Impact of Double Al<inf>0.1</inf>Ga<inf>0.9</inf>As Barrier on n-i-n InAs/GaAs Quantum Dot Infrared Photodetectors

Baoning Lai,Yunjiang Jin,Lin Liu,Ying Yu,Siyuan Yu

2019-01-01

Abstract:AlGaAs Barrier is helpful to decrease the thermal motion of carriers. In this work, we compare the performance of the single barrier QDIP with double barrier QDIP.
Impact Of Double Alo.Igao.9as Barrier On N-I-N Inas/Gaas Quantum Dot Infrared Photodetectors

Baoning Lai,Yunjiang Jin,Lin Liu,Ying Yu,Siyuan Yu

2019-01-01

Abstract:AlGaAs Barrier is helpful to decrease the thermal motion of carriers. In this work, we compare the performance of the single barrier QDIP with double barrier QDIP.
GaAs/AlGaAs Quantum-Well Infrared Photodetectors on GaAs-on-Si Substrates

DK Sengupta,W Fang,JI Malin,J Li,T Horton,AP Curtis,KC Hsieh,SL Chuang,H Chen,M Feng,GE Stillman,L Li,HC Liu,KMSV Bandara,SD Gunapala,WI Wang

DOI: https://doi.org/10.1063/1.119473

IF: 4

1997-01-01

Applied Physics Letters

Abstract:In this letter, we describe the characteristics of molecular beam epitaxy GaAs/AlGaAs quantum-well infrared photodetectors (QWIP’s) grown on a GaAs substrate, and on a GaAs-on-Si substrate produced by metalorganic chemical-vapor deposition. Important issues for QWIP applications such as dark current, spectral response, and absolute responsivity are studied. We find that compared to a similar detector structure grown on a GaAs substrate, the detector grown on a GaAs-on-Si substrate exhibits similar dark current and absolute responsivity while displaying a small blueshift in the spectral response.
Growth of Ingan and Double Heterojunction Structure with Ingan Back Barrier

Shi Linyu,Zhang Jincheng,Wang Hao,Xue Junshuai,Ou Xinxiu,Fu Xiaofan,Chen Ke,Hao Yue

DOI: https://doi.org/10.1088/1674-4926/31/12/123001

2010-01-01

Journal of Semiconductors

Abstract:>We study the growth of an InGaN and AlGaN/GaN/InGaN/GaN double heterojunction structure by metal organic chemical vapor deposition(MOCVD).It is found that the crystal quality of the InGaN back barrier layer significantly affects the electronic property of the AlGaN/GaN/InGaN/GaN double heterojunction.A high crystal quality InGaN layer is obtained by optimizing the growth pressure and temperature.Due to the InGaN layer polarization field opposite to that in the AlGaN layer,an additional potential barrier is formed between the GaN and the InGaN layer, which enhances carrier confinement of the 2DEG and reduces the buffer leakage current of devices.The double heterojunction high-electron-mobility transistors with an InGaN back barrier yield a drain induced barrier lowering of 1.5 mV/V and the off-sate source-drain leakage current is as low as 2.6μA/mm at V DS = 10 V.
High-Performance InAs1-xSbx Detector Based on AlAs1-ySby/AlSb Quantum Tunneling Barrier

Keming Cheng,Chuang Li,Yinlin Zhang,Hao Zhong,Kai Shen,Jiang Wu

DOI: https://doi.org/10.1109/ted.2022.3225131

IF: 3.1

2023-01-01

IEEE Transactions on Electron Devices

Abstract:Barrier infrared photodetectors have been proposed to improve the device performance, such as the operating temperature. In this article, a quantum tunneling barrier with alternating AlAs0.08Sb0.92 and AlSb layers is adopted to enhance carrier extraction from an InAs0.91Sb0.09 (InAsSb) absorber layer (AL). Due to the small valence band offset between the AlSb and InAsSb layers, the photogenerated holes can be efficiently extracted by tunneling, despite the hole barrier between AlAs0.08Sb0.92 and InAsSb layers. The applied voltage of the detector with a tunneling barrier structure is reduced by about 31%, compared with that of a reference detector with an AlAs0.08Sb0.92 barrier, to fully extract the photogenerated holes. At 150 K, the quantum tunneling barrier detector exhibits a dark current density of ~ $4.35\times 10^{{-{5}}}$ A/cm2 and a quantum efficiency (QE) of 50.57% under 3.3- $\mu \text{m}$ radiation corresponding to a responsivity of 1.34 A/W at a low bias voltage of −0.18 V. Due to the tunneling barrier, a peak specific detectivity as high as $3.60\times 10^{{11}}$ cm $\cdot $ Hz $^{\text {1/2}}$ /W is achieved at a relatively low bias voltage of −0.14 V.
Effects of Diffusion Barrier Layers on the Performance of Lattice-Mismatched Metamorphic In0.83Ga0.17As Photodetectors

Zhejing Jiao,Tianyu Guo,Gaoyu Zhou,Yi Gu,Bowen Liu,Yizhen Yu,Chunlei Yu,Yingjie Ma,Tao Li,Xue Li

DOI: https://doi.org/10.3390/electronics13071339

IF: 2.9

2024-04-03

Electronics

Abstract:In the planar-type InGaAs photodetector (PD) structure, a diffusion barrier has the effect of modifying the zinc diffusion profile in the interface between the cap and the absorption layer to improve device performance. In this work, an n-type In0.83Ga0.17As diffusion barrier layer (DBL) is employed between the In0.83Al0.17As cap layer and the low-doped In0.83Ga0.17As absorption layer of a lattice-mismatched metamorphic In0.83Ga0.17As PD. The device performance of the In0.83Ga0.17As PDs in terms of dark current, quantum efficiency, and capacitance were simulated and compared to experimental results. The effects of the thickness and doping concentration of the DBL on PD performance were analyzed and shown to be optimized at both 300 K and 200 K. Based on the simulation results, the electron concentration of the DBL is recommended to be 3×1016–5×1016 cm−3 and a thickness of 0.1 μm is suggested.

engineering, electrical & electronic,computer science, information systems,physics, applied
Effects of InGaN Barriers with Low Indium Content on Internal Quantum Efficiency of Blue InGaN Multiple Quantum Wells

Wang Lai,Wang Jia-Xing,Zhao Wei,Zou Xiang,Luo Yi

DOI: https://doi.org/10.1088/1674-1056/19/7/076803

2010-01-01

Abstract:Blue In0.2 Ga0.8N multiple quantum wells （MQWs） with Inx Ga1xN （x=0.01 0.04） barriers are grown by metal organic vapour phase epitaxy.The internal quantum efficiencies （IQEs） of these MQWs are studied in a way of temperature-dependent photoluminescence spectra.Furthermore,a 2-channel Arrhenius model is used to analyse the nonradiative recombination centres （NRCs）.It is found that by adopting the InGaN barrier beneath the lowest well,it is possible to reduce the strain hence the NRCs in InGaN MQWs.By optimizing the thickness and the indium content of the InGaN barriers,the IQEs of InGaN/InGaN MQWs can be increased by about 2.5 times compared with conventional InGaN/GaN MQWs.On the other hand,the incorporation of indium atoms into the intermediate barriers between adjacent wells does not improve IQE obviously.In addition,the indium content of the intermediate barriers should match with that of the lowest barrier to avoid relaxation.
Asymmetric Dark Current in Double Barrier Quantum Well Infrared Photodetectors

QD Zhuang,JM Li,LY Lin

DOI: https://doi.org/10.1117/12.331318

1998-01-01

Abstract:Asymmetric dark current and photocurrent versus voltage characteristic in the Double Barrier Quantum Wells (DBQWs) photovoltaic infrared photodetector has been studied. A model based on asymmetric potential barriers was proposed. The asymmetric potential thick barrier, which due to the Si dopant segregation during growth makes a major contribution to the asymmetrical I-V characteristic, calculations based on our model agree well with experimental results. This work also confirms the potential use of this DBQWs for infrared photodetector with large responsivity and little dark current under negative bias.
InAs/AlxGa1−xAs Quantum Dot Infrared Photodetectors with Undoped Active Region

Zh Chen,O Baklenov,Et Kim,I Mukhametzhanov,J Tie,A Madhukar,Z Ye,Jc Campbell

DOI: https://doi.org/10.1016/s1350-4495(01)00109-8

IF: 2.877

2001-01-01

Journal of Applied Physics

Abstract:We have performed a comprehensive investigation of n-type quantum dot infrared photodetectors (QDIPs) based on InAs/GaAs epitaxical island quantum dots (QDs) grown via the innovative punctuated island growth technique. The structural properties of the QDs were investigated with cross-sectional transmission electron microscopy and atomic force microscopy. The electronic properties of the QDs inserted in QDIP devices were investigated with photoluminescence (PL), PL excitation, and intra- and inter-band photocurrent spectroscopy. The influence of AlGaAs layers inserted into the QDIP active regions on the performance of dark current and inter- and intra-band photocurrent was examined. Initial results on intra-band responsivity and detectivity of these QDIPs at 77 K with undoped active region show promise for application.
Long wavelength InAs/InAsSb superlattice barrier infrared detectors with p-type absorber quantum efficiency enhancement

David Z. Ting,Alexander Soibel,Arezou Khoshakhlagh,Sam A. Keo,Anita M. Fisher,Sir B. Rafol,Linda Höglund,Cory J. Hill,Brian J. Pepper,Sarath D. Gunapala

DOI: https://doi.org/10.1063/5.0047937

IF: 4

2021-03-29

Applied Physics Letters

Abstract:We studied long and very long wavelength InAs/InAsSb superlattice barrier infrared detectors that contain p-type absorber layers in order to take advantage of the longer electron diffusion length for quantum efficiency (QE) enhancement. While they can achieve higher QE than devices that use only n-type absorbers, their dark current characteristics are affected by the presence of metallurgical and surface p–n junctions, and are best operated under lower biasing conditions where the tunneling dark currents are less pronounced. Rather than using a p-type absorber only, a barrier infrared detector structure with a combination of p- and n-type absorber sections can benefit from a shallower mesa etch that reduces fabrication demands and also decreases the p-type absorber exposed surface area. We compare four complementary barrier infrared detector structures that use an n-type absorber, a combination of p- and n-type absorbers, or a p-type absorber and briefly report results from a 13.3 μm cutoff focal plane array.

physics, applied
Theoretical Simulation of Extended Mid-Wave Infrared High Operating Temperature InSb Pbn Photodetectors

Yinlin Zhang,Chuang Li,Daqian Guo,Keming Cheng,Kai Shen,Jiang Wu

DOI: https://doi.org/10.1109/jqe.2023.3325233

IF: 2.5

2023-01-01

IEEE Journal of Quantum Electronics

Abstract:The application of the barrier architecture exhibits the potential in reducing the noise current and improving the performance of photodetectors. However, the development of mid-infrared InSb barrier detector is lagging far behind its III-V counterparts due to the problem of lattice mismatch. In this paper, we proposed two InSb barrier detectors that have reduced dark current and raised operating temperatures with the help of commercial software APSYS platform. The incorporation of a In0.72 Al0.28Sb barrier architecture to the InSb absorber offers a significant dark current reduction over the conventional InSb photodiode, regardless the presence of strain-induced defects within the barrier layers. At 150 K, the InSb bulk barrier detector has a cutoff wavelength at $5.65 \mu \text{m}$ . With a barrier design, the dark current, $9.96\times 10^{-3}\text{A}$ /cm2 at −220 mV, is about 77 times lower than the InSb photodiode and the specific detectivity is about $2.07\times 10 ^{11}$ cm Hz $^{1/2}$ /W with a–220 mV bias voltage, which brings approximately an order of magnitude of performance improvement.
Two-colour In0.5Ga0.5As Quantum Dot Infrared Photodetectors on Silicon

Daqian Guo,Qi Jiang,Mingchu Tang,Siming Chen,Yuriy I. Mazur,Y. Maidaniuk,Mourad Benamara,Mykhaylo P. Semtsiv,William T. Masselink,Gregory J. Salamo,Huiyun Liu,Jiang Wu

DOI: https://doi.org/10.1088/1361-6641/aad83c

IF: 2.048

2018-01-01

Semiconductor Science and Technology

Abstract:An InGaAs quantum dot (QD) photodetector is directly grown on a silicon substrate. GaAs-on-Si virtual substrates with a defect density in the order of 106 cm−2 are fabricated by using strained-layer superlattice as dislocation filters. As a result of the high quality virtual substrate, fabrication of QD layer with good structural properties has been achieved, as evidenced by transmission electron microscopy and x-ray diffraction measurements. The InGaAs QD infrared photodetector is then fabricated on the GaAs-on-Si wafer substrate. Dual-band photoresponse is observed at 80 K with two response peaks around 6 and 15 μm.
Incorporation of random alloy GaBi$_{x}$As$_{1-x}$ barriers in InAs quantum dot molecules: alloy strain and orbital effects towards enhanced tunneling

Arthur Lin,Matthew F. Doty,Garnett W. Bryant

DOI: https://doi.org/10.1103/PhysRevB.109.165303

2024-04-09

Abstract:Self-assembled InAs quantum dots (QDs), which have long hole-spin coherence times and are amenable to optical control schemes, have long been explored as building blocks for qubit architectures. One such design consists of vertically stacking two QDs to create a quantum dot molecule (QDM). The two dots can be resonantly tuned to form "molecule-like" coupled hole states from the hybridization of hole states otherwise localized in each respective dot. Furthermore, spin-mixing of the hybridized states in dots offset along their stacking direction enables qubit rotation to be driven optically, allowing for an all-optical qubit control scheme. Increasing the magnitude of this spin mixing is important for optical quantum control protocols. To enhance the tunnel coupling and spin-mixing across the dots, we introduce Bi in the GaAs inter-dot barrier. Previously, we showed how to model InAs/GaBiAs in an atomistic tight-binding formalism, and how the dot energy levels are affected by the alloy. In this paper, we discuss the lowering of the tunnel barrier, which results in a three fold increase of hole tunnel coupling strength in the presence of a 7% alloy. Additionally, we show how an asymmetric strain between the two dots caused by the alloy shifts the resonance. Finally, we discuss device geometries for which the introduction of Bi is most advantageous.

Mesoscale and Nanoscale Physics,Quantum Physics
High performance InAs0.91Sb0.09 MWIR detectors with an AlAs1-ySby graded barrier

Hao Zhong,Chuang Li,Daqian Guo,Keming Cheng,Xingyu Tang,Kai Shen,Jiang Wu

DOI: https://doi.org/10.1016/j.infrared.2023.104584

IF: 2.997

2023-01-01

Infrared Physics & Technology

Abstract:InAs0.91Sb0.09 barrier detectors are an important candidate in realizing high operating temperature middle wavelength infrared (MWIR) photodetectors. Here, an AlAs1-ySby graded barrier layer with linear Sb composition varying from y = 1 to 0.92 is utilized to improve the extraction of photo-generated minority carriers from an InAs0.91Sb0.09 absorber layer. With the modification of valance band misalignment between the absorber and barrier layers, although a hole barrier between AlAs0.08Sb0.92 and InAs0.91Sb0.09 layers exists, the photo-generated holes can be effectively extracted. At 150 K and under zero bias voltage, the maximum quantum efficiency of the devices with a graded barrier reaches similar to 56 %, which is much higher than that of the device with a uniform AlAs0.08Sb0.92 barrier. Benefiting from the low dark current density at small reverse bias voltages, a maximum specific detectivity (D*) similar to 6.19 x 10(11) cm center dot Hz(1/2)/W is realized at zero bias voltage, which is 50 % higher than the maximum D* similar to 4.26 x 10(11) cm center dot Hz(1/2)/W of the uniform barrier device operated at-150 mV bias voltage.
Effect Of An Indium-Doped Barrier On Enhanced Near-Ultraviolet Emission From Ingan/Algan: In Multiple Quantum Wells Grown On Si(111)

Jiejun Wu,Guoyi Zhang,Xianglin Liu,Qinsheng Zhu,Zhanguo Wang,Quanjie Jia,Liping Guo

DOI: https://doi.org/10.1088/0957-4484/18/1/015402

IF: 3.5

2007-01-01

Nanotechnology

Abstract:Low indium content InGaN/AlGaN multiple quantum wells (MQWs) have been grown on Si(111) substrate by metal-organic chemical vapour deposition (MOCVD). A new method of using an isoelectronic indium-doped AlGaN barrier has been found to be very effective in improving the crystalline quality and interfacial abruptness of InGaN quantum well layers. We grew five periods of In0.06Ga0.94N/Al0.20Ga0.80N:In MQWs with In-doped barrier layers and obtained strong near-ultraviolet (UV) emission (similar to 400 nm) at room temperature. An In-doped AlGaN barrier improves the room-temperature PL intensity of InGaN/AlGaN MQWs, making it a candidate barrier for a near-UV source on Si substrate.
Influence of structure and doping concentration of AlxGa1-xN/GaN double quantum wells on wavelength and absorption coefficient of intersubband transitions

Lei Shuang-Ying,Bo Shen,Zhang Guo-Yi

DOI: https://doi.org/10.7498/aps.57.2386

2008-01-01

Abstract:By solving the Schrdinger and Poisson equations self-consistently, the central barrier height, central barrier width, well width, and doping concentration in the barriers of symmetric Al_ 0.75 Ga_ 0.25 N/GaN double quantum wells (DQWs) have been studied to investigate their influences on the wavelength and absorption coefficient of intersubband transitions (ISBTs). A smaller wavelength of the ISBT between the first odd and the second even order subbands (S_ 1odd -S_ 2even ISBT) in Al_ 0.75 Ga_ 0.25 N/GaN DQWs and a larger absorption coefficient of the S_ 1odd -S_ 2even ISBT were obtained with decreased central barrier height, when the central barrier height was larger than 0.62 eV. The wavelength of the S_ 1odd -S_ 2even ISBT decreases, and the absorption coefficient of the S_ 1odd -S_ 2even ISBT increases, when the width of the central barrier is reduced. On the other hand, decreasing the width of the well will result in smaller wavelength of the S_ 1odd -S_ 2even ISBT and larger absorption coefficient of the S_ 1odd -S_ 2even ISBT when the width of the well is narrower than 1.9 nm. When doping concentration in the barriers is smaller than 10~ 18 /cm~3, the wavelength of the S_ 1odd -S_ 2even ISBT is unchanged, while the absorption coefficient of the S_ 1odd -S_ 2even ISBT increases with the doping concentration. These results provide useful guidance for realization of ultrafast two-color optoelectronic devices operating in the optical communication wavelength range.
Effect of high bandgap AlAs quantum barrier on electronic and optical properties of In0.70Ga0.30As/Al0.60In0.40As superlattice under applied electric field for laser and detector applications

B. O. Alaydin

DOI: https://doi.org/10.1142/s0217979221500272

2020-12-18

International Journal of Modern Physics B

Abstract:Effect of high bandgap [Formula: see text] nm AlAs on the electronic and optical properties of the [Formula: see text]/[Formula: see text] superlattice is investigated by using effective mass approximation under the electric field. Electronic transitions are obtained as 0.403 eV and 0.023 eV for [Formula: see text] and [Formula: see text] in the gain region. Thin AlAs increases electron confinement in the superlattice and prevents electron leakage in the gain region which mostly results in higher absorption/emission in the superlattice. AlAs has no major effects on transitions energies in the gain region but it is effectively decreasing the total absorption in the injector region and preventing the internal absorption. AlAs also makes the superlattice optically more stable by decreasing the high refractive index change in the injector region by factor 5.

physics, condensed matter, applied, mathematical
Studies On Abrupt And Gradual Band Gap Hole Barriers In Inas/Gasb Superlattice Long Wavelength Photodetectors

yi zhou,jianxin chen,fangfang wang,zhicheng xu,zhizhong bai,chuan jin,li he

DOI: https://doi.org/10.1117/12.2179742

2015-01-01

Abstract:The barrier enhanced InAs/GaSb long wavelength photodetectors were proved to have better performance. Our previous work showed a PBIN detector with an electron barrier inserted show significantly improved electrical performances compared to a PIN structure. To improve the quantum efficiency, Be-doping was employed to convert the conductivity of the long wavelength SL structure, the PN junction moves away from the B-I hetrostructure to the p-N interface which loses the barrier effect. Therefore, the hole barrier was needed to form a PBpBN structure. In this paper, both the abrupt and gradual hole barrier was designed without Al element to form a PBpBN structure. The gradual hole barrier was optimized to avoid the blocking of photo generated current, maximized the quantum efficiency. The R(max)A product of the PBpBN detector was measured to be 77 Omega cm(2) and the dark current density under -0.05V bias was measured to be 8.8x10(-4)A/cm(2) at 80K. The quantum efficiency of gradual hole barrier detector was measured to be 27.2% at 10.6 mu m and the quantum efficiency was slowly decreased under reverse bias. The result shows the gradual hole barrier efficiently eliminate the peak barrier in the electron band. The peak detectivity of this graded detector is calculated to be 9.46x10(10)cm.Hz(1/2).W-1 at 10.6 mu m.
Effectiveness of AlGaAs barrier layers as a redistribution channel of photoexcited carriers on anomalous temperature dependence of photoluminescence properties of GaAs quantum dots

Yudai Miyauchi,Tetsuo Ikari,Takaaki Mano,Takeshi Noda,Atsuhiko Fukuyama

DOI: https://doi.org/10.1063/5.0011571

IF: 2.877

2020-08-07

Journal of Applied Physics

Abstract:Photoluminescence (PL) measurements at a wide temperature range, up to room temperature, for high-quality and high-density GaAs/AlGaAs quantum dots (QDs) fabricated by droplet epitaxy were carried out to investigate the anomalous temperature dependence of the PL peak energy from the QD ensemble. In addition to a reported redshift that deviated from the so-called Varshni's curve of the PL peak energy in the low temperature region, a new blueshift was observed above 200 K. We analyzed the experimental results using a steady-state rate equation model and observed a good agreement. The distribution of the QD sizes and the presence of the AlGaAs barrier layer as a carrier coupling channel were considered in this model. This means that the wetting layer proposed thus far is not a necessary condition for explaining the anomalous temperature behavior of the PL properties. In addition, it was found that the anomalous temperature behavior was smeared out by the insertion of a GaAs height adjustment layer in order to homogenize the apparent QD size. We found that sufficient control of the QD size is a necessary factor for high temperature stability of QD devices.

physics, applied
Observation of Barrier-Induced Strain Relaxation in InGaAs/GaAs Single Quantum Wells

WZ SHEN,XC SHEN,WG TANG,T ANDERSSON

DOI: https://doi.org/10.1088/0256-307x/11/11/010

1994-01-01

Abstract:Reasonably good agreement among the photoluminescence, absorption, in-plane photocurrent and theoretical calculation demonstrates the effect of GaAs barrier width on the strain in In0.20Ga0.80As/GaAs single quantum wells. The strain of each sample has been deduced.

Impact of Double Al0.1Ga0.9As Barrier on n-i-n InAs/GaAs Quantum Dot Infrared Photodetectors

Impact of Double Al<inf>0.1</inf>Ga<inf>0.9</inf>As Barrier on n-i-n InAs/GaAs Quantum Dot Infrared Photodetectors

Impact Of Double Alo.Igao.9as Barrier On N-I-N Inas/Gaas Quantum Dot Infrared Photodetectors

GaAs/AlGaAs Quantum-Well Infrared Photodetectors on GaAs-on-Si Substrates

Growth of Ingan and Double Heterojunction Structure with Ingan Back Barrier

High-Performance InAs1-xSbx Detector Based on AlAs1-ySby/AlSb Quantum Tunneling Barrier

Effects of Diffusion Barrier Layers on the Performance of Lattice-Mismatched Metamorphic In0.83Ga0.17As Photodetectors

Effects of InGaN Barriers with Low Indium Content on Internal Quantum Efficiency of Blue InGaN Multiple Quantum Wells

Asymmetric Dark Current in Double Barrier Quantum Well Infrared Photodetectors

InAs/AlxGa1−xAs Quantum Dot Infrared Photodetectors with Undoped Active Region

Long wavelength InAs/InAsSb superlattice barrier infrared detectors with p-type absorber quantum efficiency enhancement

Theoretical Simulation of Extended Mid-Wave Infrared High Operating Temperature InSb Pbn Photodetectors

Two-colour In0.5Ga0.5As Quantum Dot Infrared Photodetectors on Silicon

Incorporation of random alloy GaBi$_{x}$As$_{1-x}$ barriers in InAs quantum dot molecules: alloy strain and orbital effects towards enhanced tunneling

High performance InAs0.91Sb0.09 MWIR detectors with an AlAs1-ySby graded barrier

Effect Of An Indium-Doped Barrier On Enhanced Near-Ultraviolet Emission From Ingan/Algan: In Multiple Quantum Wells Grown On Si(111)

Influence of structure and doping concentration of AlxGa1-xN/GaN double quantum wells on wavelength and absorption coefficient of intersubband transitions

Effect of high bandgap AlAs quantum barrier on electronic and optical properties of In0.70Ga0.30As/Al0.60In0.40As superlattice under applied electric field for laser and detector applications

Studies On Abrupt And Gradual Band Gap Hole Barriers In Inas/Gasb Superlattice Long Wavelength Photodetectors

Effectiveness of AlGaAs barrier layers as a redistribution channel of photoexcited carriers on anomalous temperature dependence of photoluminescence properties of GaAs quantum dots

Observation of Barrier-Induced Strain Relaxation in InGaAs/GaAs Single Quantum Wells