Abstract:Two-dimensional layered ReX2 (X = Se, S) has attracted researcher's great interest due to its unusual in-plane anisotropic optical and electrical properties and great potential in polarization-sensitive optoelectronic devices, while the clean, energy-saving, and ecological synthesis of highly-crystalline ReSe2 with controlled domains remains challenging yet promising. Here, we develop a novel space-confined solid-phase approach for the growth of high-quality two-domain 1T'-ReSe2 with tunable optoelectronic properties by using pure Re powder film as Re precursor. The results show that ReSe2 can be grown at a temperature as low as 550 oC in a small-tube-assisted space-confined reactor, with its size and shape well-tailored via temperature control. A solid-phase two-domain ReSe2 growth mechanism is proposed, as evidenced by combining in-situ optical monitoring, ex-situ electron microscope and elemental mapping, and polarized optical imaging. Moreover, we have fabricated two-domain ReSe2 transistors, which exhibit switchable transport behavior between n-type and ambipolar character via grain boundary orientation control. This modulation phenomenon is attributed to the different doping levels between the grain boundary and the single domain. Furthermore, the as-fabricated two-domain ReSe2 photodetectors exhibit a highly gate-tunable current on-off ratio (with a maximum value of ~8.2x10^3), a polarization-sensitive photo-response, and a high-speed response time (~300 us), exceeding most of the previously reported ReX2 photodetectors. Our work thus provides a new, low-consumption, energy-saving growth strategy toward high-quality, domain-controlled ReX2 for highly tunable and high-performance optoelectronics.

itaxy of large-area continuous ReS 2 fi lms on mica substrate †

van der Waals epitaxy of large-area continuous ReS2 films on mica substrate

Controlled growth of large-area anisotropic ReS 2 atomic layer and its photodetector application.

Controllable Growth of Large-Scale Continuous ReS2 Atomic Layers

Anisotropic Spectroscopy and Electrical Properties of 2D ReS2(1–x)Se2x Alloys with Distorted 1T Structure

Epitaxial Growth of Large-Area and Highly Crystalline Anisotropic ReSe2 Atomic Layer

Controllable growth of substrate-scale 2D ReSe 2 thin films and their application for molecular detection via the SERS technique

Facile Growth of Large-Area and High-Quality Few-Layer ReS2 by Physical Vapour Deposition

ReS2‐Based Field‐Effect Transistors and Photodetectors

Salt-assisted growth and ultrafast photocarrier dynamics of large-sized monolayer ReSe 2

Salt-assisted growth and ultrafast photocarrier dynamics of large-sized monolayer ReSe<sub>2</sub>

Electronic and Optoelectronic Applications Based on ReS2

Controllable growth of 2D ReS 2 flakes and their surface Raman enhancement effects

Deeply Exploring Anisotropic Evolution Toward Large-Scale Growth of Monolayer ReS2.

Large-area ReS2 monolayer films on flexible substrate for SERS based molecular sensing with strong fluorescence quenching

Two-dimensional ReS2: Solution to the Unresolved Queries on Its Structure and Inter-layer Coupling Leading to Potential Optical Applications

Tellurium‐Assisted Epitaxial Growth of Large‐Area, Highly Crystalline ReS2 Atomic Layers on Mica Substrate

Epitaxial Growth of 1D Atomic Chain Based Se Nanoplates on Monolayer ReS2 for High‐Performance Photodetectors

Space-confined solid-phase growth of two-domain 1T'-ReSe2 for tunable optoelectronics

Atomic Layers: Tellurium-Assisted Epitaxial Growth of Large-Area, Highly Crystalline ReS2 Atomic Layers on Mica Substrate (adv. Mater. 25/2016).

Space-confined solid-phase growth of two-domain 1T′-ReSe2 for tunable optoelectronics