Abstract:Precisely vertically aligned nanorod arrays are grown over an epitaxial substrate such as boron doped ZnO (110). The 1D morphology allows for the transport of charge carriers along the longitudinal direction of nanorods. Then the naturally formed ZnO:B/Sb2Se3 heterostructure leads to the fabrication of heterojunction‐based photodetector, which shows exceeding performances. Device simulation predicts the theoretical limit of such a heterostructure for future investigation. Antimony selenide (Sb2Se3) has garnered significant attention with its extraordinary optical and optoelectronic properties for optical and optoelectronic devices such as broadband photodetectors. The trends emerge in the synthesis of Sb2Se3 over a semiconducting substrate for the direct formation of heterostructures, which facilitate a pn junction for self‐powered photodetector. 1D Sb2Se3 nanorods are preferred to boost the charge carrier transport along the longitudinal direction as well as the optical absorption by light trapping. Great challenges remain for the vertical growth of nanorods. In this work, the precisely vertical alignment of Sb2Se3 nanorod arrays has been achieved in an epitaxial growth manner by selecting a lattice‐matching substrate, namely, boron‐doped ZnO (110) surface. The directly grown boron‐doped ZnO/Sb2Se3 nanorod arrays heterostructure leads to a high‐performance broadband photodetector. Eventually, the device demonstrates extraordinary figure‐of‐merit parameters, i.e., responsivity, on/off ratio, and specific detectivity. Furthermore, device simulation predicts the theoretical limit of the photodetector performances on the condition of suppressed defect density of the Sb2Se3. These results may shed light on the investigation of controlled growth of low‐dimensional materials, self‐powered photodetectors, and related optic and optoelectronic devices.

Epitaxial Growth of 1D Atomic Chain Based Se Nanoplates on Monolayer ReS2 for High‐Performance Photodetectors

Anisotropic Spectroscopy and Electrical Properties of 2D ReS2(1–x)Se2x Alloys with Distorted 1T Structure

Tunable Ambipolar Polarization-Sensitive Photodetectors Based on High-Anisotropy ReSe2 Nanosheets.

Hybrid Dual-Channel Phototransistor Based on 1D T-Se and 2D ReS2 Mixed-Dimensional Heterostructures

Van der Waals epitaxial growth of two-dimensional PbSe and its high-performance heterostructure devices

Salt-assisted growth and ultrafast photocarrier dynamics of large-sized monolayer ReSe 2

Controlled growth of large-area anisotropic ReS 2 atomic layer and its photodetector application.

Epitaxial Growth of Large-Area and Highly Crystalline Anisotropic ReSe2 Atomic Layer

Epitaxial Growth of Large-Grain NiSe Films by Solid-State Reaction for High-Responsivity Photodetector Arrays.

Edge-Epitaxial Growth of InSe Nanowires toward High-Performance Photodetectors

Photoresponse Enhancement in Monolayer ReS2 Phototransistor Decorated with CdSe-CdS-ZnS Quantum Dots.

Epitaxial Growth of Vertically Aligned Antimony Selenide Nanorod Arrays for Heterostructure Based Self‐Powered Photodetector

Salt-assisted growth and ultrafast photocarrier dynamics of large-sized monolayer ReSe<sub>2</sub>

van der Waals epitaxy of large-area continuous ReS2 films on mica substrate

Fabrication of 1D Te/2D ReS2 Mixed-Dimensional Van Der Waals P-N Heterojunction for High-Performance Phototransistor.

Near-direct bandgap $WSe_2$/$ReS_2$ type-II pn heterojunction for enhanced ultrafast photodetection and high-performance photovoltaics

Space-confined solid-phase growth of two-domain 1T'-ReSe2 for tunable optoelectronics

Space-confined solid-phase growth of two-domain 1T′-ReSe2 for tunable optoelectronics

itaxy of large-area continuous ReS 2 fi lms on mica substrate †

High-performance few-layer Mo-doped ReSe₂ nanosheet photodetectors

ReS2‐Based Field‐Effect Transistors and Photodetectors