Abstract:Photoconductors based on semiconducting thin films, nanowires, and two-dimensional atomic layers have been extensively investigated in the past decades. However, there is no explicit photogain equation that allows for fitting and designing photoresponses of these devices. In this work, we managed to derive explicit photogain equations for silicon nanowire photoconductors based on experimental observations. The silicon nanowires were fabricated by patterning the device layer of silicon-on-insulator wafers by standard lithography that were doped with boron at a concentration of similar to 8.6 X 10(17) cm(-3). It was found that the as-fabricated silicon nanowires have a surface depletion region similar to 32 nm wide. This depletion region protects charge carriers in the channel from surface scatterings, resulting in the independence of charge carrier mobilities on nanowire size. Under light illumination, the depletion region logarithmically narrows down, and the nanowire channel widens accordingly. Photo Hall effect measurements show that the nanowire photoconductance is not contributed by the increase of carrier concentrations but by the widening of the nanowire channel. As a result, a nanowire photoconductor can be modeled as a resistor in connection with floating Schottky junctions near the nanowire surfaces. Based on the photoresponses of a Schottky junction, we derived explicit photogain equations for nanowire photoconductors that are a function of light intensity and device physical parameters. The gain equations fit well with the experimental data, from which we extracted the minority carrier lifetimes as tens of nanoseconds, consistent with the minority carrier lifetime in nanowires reported in literature.

Understanding Transient Responses of Silicon Nanowire Photoconductors

Analytical photoresponses of gated nanowire photoconductors

Probing Physical Parameters of Low-Dimensional Semiconductor Devices by Analytical Photoresponse Theory

Current-voltage Characteristics and Parameter Retrieval of Semiconducting Nanowires

Explicit Gain Equations for Single Crystalline Photoconductors

Validation of minority carrier recombination lifetimes in low-dimensional semiconductors found by analytical photoresponses

Uncovering the Density of Nanowire Surface Trap States Hidden in the Transient Photoconductance

Dynamics of Charge Carriers in Silicon Nanowire Photoconductors Revealed by Photo Hall Effect Measurements.

Transient Rayleigh scattering from single semiconductor nanowires

Ultrafast Exciton Dynamics in Silicon Nanowires

Silicon Nanowire Core-Shell PN Junction Phototransistors by Self-Assembled Monolayer Doping

Unveiling the detection dynamics of semiconductor nanowire photodetectors by terahertz near-field nanoscopy

Transient photoconductance and photoluminescence from thick silicon wafers and bricks: Analytical solutions

Explicit Photogain Theory for Nanowire Photoconductors Validated by TCAD Software Simulations

Transient Rayleigh Scattering: A New Probe of Picosecond Carrier Dynamics in a Single Semiconductor Nanowire

Ultrafast optical nanoscopy of carrier dynamics in silicon nanowires

Analytical Transient Responses and Gain-Bandwidth Products of Low-Dimensional High-Gain Photodetectors.

Photoresponsive properties of ultrathin silicon nanowires

High-Sensitivity Silicon Nanowire Phototransistors

Cryogenically Probing The Surface Trap States Of Single Nanowires Passivated With Self-Assembled Molecular Monolayers

High Performance Core-shell Junction Field Effect Phototransistor by Molecular Monolayer Doping