Abstract:Heterostructures based on new advanced materials offer a cornerstone for future optoelectronic devices with improved photoelectric performance. Band alignment is crucial for understanding the mechanism of charge carrier transportation and interface dynamics in heterostructures. Herein, we grew SnS2/Bi2X3 (X = Se, Te) van der Waals heterostructures by combining physical vapor deposition with chemical vapor deposition. The band alignment, measured by high-resolution X-ray photoelectron spectroscopy, suggested the successful design of type-I SnS2/Bi2Se3 and type-II SnS2/Bi2Te3 heterostructures. The SnS2/Bi2X3 heterostructure greatly improved the photoelectric response of a photoelectrochemical-type photodetector. The photocurrent densities in the type-I SnS2/Bi2Se3 and type-II SnS2/Bi2Te3 heterostructure-based devices were more than one order of magnitude higher than those of SnS2, Bi2Se3, and Bi2Te3. The improved photoelectric properties of the SnS2/Bi2X3 heterostructures can be explained as follows: (i) the photoexcited electrons and holes are effectively separated in the heterostructures; (ii) the charge-transfer efficiency and carrier density at the interface between the SnS2/Bi2X3 heterostructures and the electrolyte are greatly improved; (iii) the formed heterostructures expand the light absorption range. The photoelectric performance was further enhanced by efficient light trapping in the upright SnS2. The photoelectric response is higher in the type-I SnS2/Bi2Se3 heterostructure than in the type-II SnS2/Bi2Te3 heterostructure due to more efficient charge transportation at the type-I SnS2/Bi2Se3 heterostructure/electrolyte interface. These results suggest that suitable type-I and type-II heterostructures can be developed for high-performance photodetectors and other optoelectronic devices.

Type-II Interface Band Alignment in the Vdw PbI2-MoSe2 Heterostructure.

Multifarious Interfaces, Band Alignments, and Formation Asymmetry of WSe2-MoSe2 Heterojunction Grown by Molecular-Beam Epitaxy.

Interlayer couplings, Moiré patterns, and 2D electronic superlattices in MoS2/WSe2 hetero-bilayers.

PbI2-MoS2 Heterojunction: Van Der Waals Epitaxial Growth and Energy Band Alignment.

Band Structure Engineering of Interfacial Semiconductors Based on Atomically Thin Lead Iodide Crystals

Effects of Components Modulation on the Type of Band Alignments for PbI2/WS2 Van Der Waals Heterostructure

Band Alignment Determination of Zno/Pbse Heterostructure Interfaces by Synchrotron Radiation Photoelectron Spectroscopy

Efficient Energy Transfer in In2Se3–MoSe2 Van Der Waals Heterostructures

Effect of Vertical Strain and In-Plane Biaxial Strain on Type-Ii MoSi2N4/Cs3Bi2I9 Van Der Waals Heterostructure

Tunable Excitonic Properties in Two-Dimensional Heterostructures Based on Solution-Processed PbI2 Flakes

Investigation of the Band Alignment at MoS2/PtSe2 Heterojunctions

Direct Synthesis and Enhanced Rectification of Alloy‐to‐Alloy 2D Type‐II MoS 2(1‐ x ) Se 2 x /SnS 2(1‐ y ) Se 2 y Heterostructures

Band alignments, conduction band edges and intralayer bandgap renormalisation in MoSe2/WSe2 heterobilayers

Programmable Interfacial Band Configuration in WS2/Bi2O2Se Heterojunctions

Composition Modulation-Mediated Band Alignment Engineering from Type I to Type III in 2D vdW Heterostructures

A Type-I Van Der Waals Heterobilayer of WSe2/MoTe2

Changes in the photoluminescence of ultra-weak interlayer coupled MoSe2/PbI2 van der Waals heterostructures

Engineering the band structure of type-II MoSe2/WSe2 van der Waals heterostructure by electric field and twist angle: A firstprinciples perspective

Band alignment of type-I SnS2/Bi2Se3 and type-II SnS2/Bi2Te3 van der Waals heterostructures for highly enhanced photoelectric responses

Direct Vapor Growth of 2D Vertical Heterostructures with Tunable Band Alignments and Interfacial Charge Transfer Behaviors

The structure and electronic properties of the MoSe<sub>2</sub>/PtS<sub>2</sub> van der Waals heterostructure