Planar Graphene/h-Bn/graphene Heterostructures for Protein Stretching and Confinement

Zhi He,Ruhong Zhou

DOI: https://doi.org/10.1039/d0nr02271c

IF: 6.7

2020-01-01

Nanoscale

Abstract:Spontaneous protein stretching was realized by a two-dimensional heterostructure composed of a hexagonal boron nitride (h-BN) nanoribbon stitched with two graphene sheets.

What problem does this paper attempt to address?

Planar Boronic Graphene and Nitrogenized Graphene Heterostructure for Protein Stretch and Confinement

Xuchang Su,Zhi He,Lijun Meng,Hong Liang,Ruhong Zhou

DOI: https://doi.org/10.3390/biom11121756

IF: 6.064

2021-01-01

Biomolecules

Abstract:Single-molecule techniques such as electron tunneling and atomic force microscopy have attracted growing interests in protein sequencing. For these methods, it is critical to refine and stabilize the protein sample to a "suitable mode" before applying a high-fidelity measurement. Here, we show that a planar heterostructure comprising boronic graphene (BC3) and nitrogenized graphene (C3N) sandwiched stripe (BC3/C3N/BC3) is capable of the effective stretching and confinement of three types of intrinsically disordered proteins (IDPs), including amyloid-beta (1-42), polyglutamine (Q42), and alpha-Synuclein (61-95). Our molecular dynamics simulations demonstrate that the protein molecules interact more strongly with the C3N stripe than the BC3 one, which leads to their capture, elongation, and confinement along the center C3N stripe of the heterostructure. The conformational fluctuations of IDPs are substantially reduced after being stretched. This design may serve as a platform for single-molecule protein analysis with reduced thermal noise.
Direct growth of large-area graphene and boron nitride heterostructures by a co-segregation method

Chaohua Zhang,Shuli Zhao,Chuanhong Jin,Ai Leen Koh,Yu Zhou,Weigao Xu,Qiucheng Li,Qihua Xiong,Hailin Peng,Zhongfan Liu

DOI: https://doi.org/10.1038/ncomms7519

IF: 16.6

2015-01-01

Nature Communications

Abstract:Graphene/hexagonal boron nitride (h-BN) vertical heterostructures have recently revealed unusual physical properties and new phenomena, such as commensurate–incommensurate transition and fractional quantum hall states featured with Hofstadter’s butterfly. Graphene-based devices on h-BN substrate also exhibit high performance owing to the atomically flat surface of h-BN and its lack of charged impurities. To have a clean interface between the graphene and h-BN for better device performance, direct growth of large-area graphene/h-BN heterostructures is of great importance. Here we report the direct growth of large-area graphene/h-BN vertical heterostructures by a co-segregation method. By one-step annealing sandwiched growth substrates (Ni(C)/(B, N)-source/Ni) in vacuum, wafer-scale graphene/h-BN films can be directly formed on the metal surface. The as-grown vertically stacked graphene/h-BN structures are demonstrated by various morphology and spectroscopic characterizations. This co-segregation approach opens up a new pathway for large-batch production of graphene/h-BN heterostructures and would also be extended to the synthesis of other van der Waals heterostructures.
An Atomistic Approach for the Structural and Electronic Properties of Twisted Bilayer Graphene-Boron Nitride Heterostructures

Min Long,Pierre A. Pantaleón,Zhen Zhan,Francisco Guinea,Jose Ángel Silva-Guillén,Shengjun Yuan

DOI: https://doi.org/10.1038/s41524-022-00763-1

IF: 12.256

2022-01-01

npj Computational Materials

Abstract:Twisted bilayer graphene (TBG) has taken the spotlight in the condensed matter community since the discovery of correlated phases. In this work, we study heterostructures of TBG and hexagonal boron nitride (hBN) using an atomistic tight-binding model together with semi-classical molecular dynamics to consider relaxation effects. The hBN substrate has significant effects on the band structure of TBG even in the case where TBG and hBN are not aligned. Specifically, the substrate induces a large mass gap and strong pseudo-magnetic fields that break the layer degeneracy. Interestingly, such degeneracy can be recovered with a second hBN layer. Finally, we develop a continuum model that describes the tight-binding band structure. Our results show that a real-space tight-binding model in combination with semi-classical molecular dynamics is a powerful tool to study the electronic properties of moiré heterostructures, and to explain experimental results in which the effect of the substrate plays an important role.
Programmable Extreme Pseudomagnetic Fields in Graphene by a Uniaxial Stretch

Shuze Zhu,Joseph A. Stroscio,Teng Li

DOI: https://doi.org/10.1103/physrevlett.115.245501

IF: 8.6

2015-01-01

Physical Review Letters

Abstract:Many of the properties of graphene are tied to its lattice structure, allowing for tuning of charge carrier dynamics through mechanical strain. The graphene electro-mechanical coupling yields very large pseudomagnetic fields for small strain fields, up to hundreds of Tesla, which offer new scientific opportunities unattainable with ordinary laboratory magnets. Significant challenges exist in investigation of pseudomagnetic fields, limited by the non-planar graphene geometries in existing demonstrations and the lack of a viable approach to controlling the distribution and intensity of the pseudomagnetic field. Here we reveal a facile and effective mechanism to achieve programmable extreme pseudomagnetic fields with uniform distributions in a planar graphene sheet over a large area by a simple uniaxial stretch. We achieve this by patterning the planar graphene geometry and graphene-based hetero-structures with a shape function to engineer a desired strain gradient. Our method is geometrical, opening up new fertile opportunities of strain engineering of electronic properties of 2D materials in general.
Periodic buckling patterns of graphene/hexagonal boron nitride heterostructure.

Chenxi Zhang,Jizhou Song,Qingda Yang

DOI: https://doi.org/10.1088/0957-4484/25/44/445401

IF: 3.5

2014-01-01

Nanotechnology

Abstract:Graphene/hexagonal boron nitride (h-BN) heterostructure has showed great potential to improve the performance of a graphene device. A graphene on an h-BN substrate may buckle due to the thermal expansion mismatch between the graphene and h-BN. We used an energy method to investigate the periodic buckling patterns including one-dimensional, square checkerboard, hexagonal, equilateral triangular and herringbone mode in a graphene/h-BN heterostructure under equi-biaxial compression. The total energy, consisting of cohesive energy, graphene membrane energy and graphene bending energy, for each buckling pattern is obtained analytically. At a compression slightly larger than the critical strain, all buckling patterns have the same total energies, which suggests that any buckling pattern may occur. At a compression much larger than the critical strain, the herringbone mode has the lowest total energy by significantly reducing the membrane energy of graphene at the expense of a slight increase of the bending energy of graphene and cohesive energy. These results may serve as guidelines for strain engineering in graphene/h-BN heterostructures.
Theoretical study of protein adsorption on graphene/h-BN heterostructures

Jun Lan,Yiran Peng,Lijun Liang,Xing Duan,Zhe Kong,Li Zhang,Jia-Wei Shen,Jiawei Shen

DOI: https://doi.org/10.1039/d3cp03303a

IF: 3.3

2023-11-04

Physical Chemistry Chemical Physics

Abstract:The biological characteristics of planar heterojunction nanomaterials and their interaction with biomolecules are very important for the application of heterojunction nanomaterials in biomedical field. In this work, molecular dynamics (MD) was used to explore the interaction between three kinds of protein with different secondary structures (single α-helix (minimal oligomeric domain protein), single β-sheet (WW structural domain of Yap65 protein) and mixed α/β structure (BBA protein)) and planar two-dimensional heterojunction (GRA/h-BN heterojunction composed of a graphene nanoplate (GRA) and a hexagonal boron nitride nanoplate (h-BN)). The results show that all three kinds of protein can be quickly and stably adsorbed on the GRA/h-BN heterojunction due to the strong van der Waals interaction. The α-helix structure of the minimal oligomeric domain protein is completely destroyed after its absorption on the surface of GRA/h-BN heterojunction. On the contrary, although the secondary structure of the WW domain and BBA protein changed slightly, its main α-helix and β-sheet structures can be completely maintained after their adsorption on the GRA/h-BN heterojunction. Compared with the α-helix structure, the β-sheet structure is more easily adsorbed to the GRA/h-BN heterojunction due to its planar structure. More importantly, with the existence of β-sheet structure, the α-helix of protein can be protected to some extent on the surface of heterojunction. In summary, GRA/h-BN heterojunction has better biocompatibility with protein including β-sheet and mixed α/β structures comparing with protein of only including α-helix. Our research clarified the biological characteristics of GRA/h-BN heterojunction nanomaterials and their interaction with protein with different secondary structures. It provided a theoretical basis for heterojunction nanomaterials to be a promising materials for the application in biomedical field.

chemistry, physical,physics, atomic, molecular & chemical
Heterostrain and Temperature-Tuned Twist Between Graphene/h-Bn Bilayers

Xing Yang,Bin Zhang

DOI: https://doi.org/10.1038/s41598-023-31233-3

IF: 4.6

2023-01-01

Scientific Reports

Abstract:Two-dimensional materials stacked atomically at small twist angles enable the modification of electronic states, motivating twistronics. Here, we demonstrate that heterostrain can rotate the graphene flake on monolayer h -BN within a few degrees (− 4° to 4°), and the twist angle stabilizes at specific values with applied constant strains, while the temperature effect is negligible in 100–900 K. The band gaps of bilayers can be modulated from ~ 0 to 37 meV at proper heterostrain and twist angles. Further analysis shows that the heterostrain modulates the interlayer energy landscape by regulating Moiré pattern evolution. The energy variation is correlated with the dynamic instability of different stacking modes of bilayers, and arises from the fluctuation of interlayer repulsive interaction associated with p -orbit electrons. Our results provide a mechanical strategy to manipulate twist angles of graphene/ h -BN bilayers, and may facilitate the design of rotatable electronic nanodevices.
Large Scale Graphene/Hexagonal Boron Nitride Heterostructure for Tunable Plasmonics

Kai Zhang,Fung Ling Yap,Kun Li,Chang Tai Ng,Lin Jun Li,Kian Ping Loh

DOI: https://doi.org/10.1002/adfm.201302009

IF: 19

2013-01-01

Advanced Functional Materials

Abstract:Vertical integration of hexagonal boron nitride (h‐BN) and graphene for the fabrication of vertical field‐effect transistors or tunneling diodes has stimulated intense interest recently due to the enhanced performance offered by combining an ultrathin dielectric with a semi‐metallic system. Wafer scale fabrication and processing of these heterostructures is needed to make large scale integrated circuitry. In this work, by using remote discharged, radio‐frequency plasma chemical vapor deposition, wafer scale, high quality few layer h‐BN films are successfully grown. By using few layer h‐BN films as top gate dielectric material, the plasmon energy of graphene can be tuned by electrostatic doping. An array of graphene/h‐BN vertically stacked micrometer‐sized disks is fabricated by lithography and transfer techniques, and infrared spectroscopy is used to observe the modes of tunable graphene plasmonic absorption as a function of the repeating (G/h‐BN)n units in the vertical stack. Interestingly, the plasmonic resonances can be tuned to higher frequencies with increasing layer thickness of the disks, showing that such vertical stacking provides a viable strategy to provide wide window tuning of the plasmons beyond the limitation of the monolayer.
AA-Stacked Borophene-Graphene Bilayer With Covalent Bonding: Ab Initio Investigation of Structural, Electronic and Elastic Properties.

M. Maslov,A. Kochaev,K. Katin,R. Meftakhutdinov

DOI: https://doi.org/10.1021/acs.jpclett.0c01443

2020-06-25

Abstract:In this Letter, we study the structural, electronic and elastic properties of single-layer striped borophene stacked on top of single-layer graphene. Through DFT calculation, we show that both the properties of striped borophene and graphene are not fully preserved in the novel heterostructure which obviously depend on the nature of the chemical bond between the layers. The obtained phonon spectrum confirms the stability of this compound. The divergence of branches in the band structure appears below the Fermi level in the K point in the first Brillouin zone. Moreover, this heterostructure possesses excellent elastic properties and can be considered for use in the field of 2D acousto- and optoelectronics.

Medicine,Materials Science,Physics
Strain induced tunable band gap and optical properties of graphene on hexagonal boron nitride

Priyanka Sinha,Prasanta K. Panigrahi,Bheemalingam Chittari

2024-07-16

Abstract:In this study, we highlight the potential of strain engineering in graphene/hBN (hexagonal Boron nitride) 2D heterostructures, enabling their use as wide-range light absorbers with significant implications for optoelectronic applications. We systematically investigate the electronic and optical properties of graphene/hBN under the application of strain, considering various stacking geometries within the framework of density-functional theory. The semimetallic graphene layer upon aligning on the insulating hexagonal boron nitride sheet opens a few tens of meV band gap at the Dirac point due to the induced on-site energy differences on the two sublattices of graphene. Here, we demonstrate that by simultaneously tuning the interlayer distance and lattice constant, this band gap can be significantly increased to 1 eV. Interestingly, in both scenarios (small and large band gaps), the material undergoes a transition from a semiconductor to a semimetallic state. Importantly, the tunability of this band gap is strongly influenced by the specific stacking configuration. We further explored the optical properties across a broad spectrum, revealing that the presence of a strain-induced band gap fundamentally alters how light interacts with the system.

Mesoscale and Nanoscale Physics
Scalable Synthesis of Monolayer Hexagonal Boron Nitride on Graphene with Giant Bandgap Renormalization

Ping Wang,Woncheol Lee,Joseph P. Corbett,William H. Koll,Nguyen M. Vu,David Arto Laleyan,Qiannan Wen,Yuanpeng Wu,Ayush Pandey,Jiseok Gim,Ding Wang,Diana Y. Qiu,Robert Hovden,Mackillo Kira,John T. Heron,Jay A. Gupta,Emmanouil Kioupakis,Zetian Mi

DOI: https://doi.org/10.1002/adma.202201387

IF: 29.4

2022-04-21

Advanced Materials

Abstract:Monolayer hexagonal boron nitride (hBN) has been widely considered a fundamental building block for 2D heterostructures and devices. However, the controlled and scalable synthesis of hBN and its 2D heterostructures has remained a daunting challenge. Here, an hBN/graphene (hBN/G) interface-mediated growth process for the controlled synthesis of high-quality monolayer hBN is proposed and further demonstrated. It is discovered that the in-plane hBN/G interface can be precisely controlled, enabling the scalable epitaxy of unidirectional monolayer hBN on graphene, which exhibits a uniform moiré superlattice consistent with single-domain hBN, aligned to the underlying graphene lattice. Furthermore, it is identified that the deep-ultraviolet emission at 6.12 eV stems from the 1s-exciton state of monolayer hBN with a giant renormalized direct bandgap on graphene. This work provides a viable path for the controlled synthesis of ultraclean, wafer-scale, atomically ordered 2D quantum materials, as well as the fabrication of 2D quantum electronic and optoelectronic devices.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Unraveling the 3D atomic structure of a suspended graphene/hBN van der Waals heterostructure

G. Argentero,A. Mittelberger,M. R. A. Monazam,Y. Cao,T. J. Pennycook,C. Mangler,C. Kramberger,J. Kotakoski,A. K. Geim,J. C. Meyer

DOI: https://doi.org/10.1021/acs.nanolett.6b04360

2017-02-09

Abstract:In this work we demonstrate that a free-standing van der Waals heterostructure, usually regarded as a flat object, can exhibit an intrinsic buckled atomic structure resulting from the interaction between two layers with a small lattice mismatch. We studied a freely suspended membrane of well aligned graphene on a hexagonal boron nitride (hBN) monolayer by transmission electron microscopy (TEM) and scanning TEM (STEM). We developed a detection method in the STEM that is capable of recording the direction of the scattered electron beam and that is extremely sensitive to the local stacking of atoms. Comparison between experimental data and simulated models shows that the heterostructure effectively bends in the out-of-plane direction, producing an undulated structure having a periodicity that matches the moiré wavelength. We attribute this rippling to the interlayer interaction and also show how this affects the intralayer strain in each layer.

Materials Science
Strain-tunable band gap in graphene/h-BN hetero-bilayer

Harihar Behera,Gautam Mukhopadhyay

DOI: https://doi.org/10.1016/j.jpcs.2012.02.010

IF: 4.383

2012-07-01

Journal of Physics and Chemistry of Solids

Abstract:Using full-potential density functional calculations within local density approximation (LDA), we predict that mechanically tunable band-gap and quasi-particle-effective-mass are realizable in graphene/hexagonal-BN hetero-bilayer (C/h-BN HBL) by application of in-plane homogeneous biaxial strain. While providing one of the possible reasons for the experimentally observed gap-less pristine-graphene-like electronic properties of C/h-BN HBL, which theoretically has a narrow band-gap, we suggest a schematic experiment for verification of our results which may find applications in nano-electromechanical systems (NEMS), nano opto-mechanical systems (NOMS) and other nano-devices based on C/h-BN HBL.

physics, condensed matter,chemistry, multidisciplinary
Electric Field Effect of Sliding Graphene/hexagonal Boron Nitride Heterobilayer

Bowen Shi,Haotian Wang,Wen Jiang,Yuan Feng,Pan Guo,Heng Gao,Zhibin Gao,Wei Ren

DOI: https://doi.org/10.1016/j.apsusc.2023.157816

IF: 6.7

2023-01-01

Applied Surface Science

Abstract:The first-principles computer-aided design of atomistic heterostructures can discover the physical properties of new materials and help them widely find applications in frontier scientific fields. Here, we report an investigation on the heterobilayer composed of one sheet of two-dimensional (2D) graphene on the surface of one-layer hexagonal boron nitride (h-BN). We calculate and simulate the binding energies, electric dipoles related to interlayer sliding, and twisting angles of three stacking orders in graphene/hBN heterobilayer. The relative energies of these three heterobilayers are obtained by using first-principles calculations method and the AB stacking structure exhibits the lowest energy. We have also found that the electric field perpendicular to the 2D plane can control the dipole magnitude of the bilayer system, and even change the polarization direction. We studied the kinetic stability of graphene-hBN bilayer heterostructures under the action of external electric fields using Ab initio molecular dynamics (AIMD), as well as the thermodynamic stability. Finally, we propose that the graphene/h-BN heterobilayer might play an important role in the field of information electronics as a 2D ma-terial with interesting physical properties.
Quasi-freestanding Monolayer Heterostructure of Graphene and Hexagonal Boron Nitride on Ir(111) with a Zigzag Boundary.

Mengxi Liu,Yuanchang Li,Pengcheng Chen,Jingyu Sun,Donglin Ma,Qiucheng Li,Teng Gao,Yabo Gao,Zhihai Cheng,Xiaohui Qiu,Ying Fang,Yanfeng Zhang,Zhongfan Liu

DOI: https://doi.org/10.1021/nl502780u

IF: 10.8

2014-01-01

Nano Letters

Abstract:In-plane heterostructure of hexagonal boron nitride and graphene (h-BN-G) has become a focus of graphene research owing to its tunable bandgap and intriguing properties. We report herein the synthesis of a quasi-freestanding h-BN-G monolayer heterostructure on a weakly coupled Ir(111) substrate, where graphene and h-BN possess distinctly different heights and surface corrugations. An atomically sharp zigzag type boundary has been found to dominate the patching interface between graphene and h-BN, as evidenced by high-resolution Scanning tunneling microscopy investigation as well as density functional theory calculation. Scanning tunneling spectroscopy studies indicate that the graphene and h-BN tend to exhibit their own intrinsic electronic features near the patching boundary. The present work offers a deep insight into the h-BN-graphene boundary structures both geometrically and electronically together with the effect of adlayer-substrate coupling.
One-Pot Confined Epitaxial Growth of 2D Heterostructure Arrays

Dechao Geng,Ibrahim Abdelwahab,Xiaofei Xiao,Adrian Cernescu,Wei Fu,Vincenzo Giannini,Stefan A. Maier,Lin Li,Wenping Hu,Kian Ping Loh,Hui Ying Yang

DOI: https://doi.org/10.1021/acsmaterialslett.0c00517

IF: 11.4

2021-01-08

ACS Materials Letters

Abstract:Graphene and hexagonal boron nitride (h-BN) have attracted intensive interests in very recent years because of their unique physical and chemical properties. With similar crystal structures, graphene and h-BN pose great potential for constructing interesting heterostructures. Here, one-pot confined synthesis of large-area graphene/h-BN in-plane heterostructure arrays via sequential edge-epitaxy is first realized on liquid Cu surface. Extensive characterizations confirm the in-plane continuity between graphene and h-BN for the synthesized heterostructures. With increased growth time, the heterostructure arrays can be turned into a uniform centimeter-scale graphene/h-BN monolayer film. Furthermore, the plasmonic characteristics of the heterostructures are investigated and utilized to evaluate the quality of the hybrid structures. Our work demonstrates the designability of CVD process for large-area synthesis of graphene/h-BN heterostructures arrays, which might be generally applied to other 2D materials.

materials science, multidisciplinary
Hexagonal Boron Nitride–Graphene Heterostructures: Synthesis and Interfacial Properties

qiucheng li,mengxi liu,yanfeng zhang,zhongfan liu

DOI: https://doi.org/10.1002/smll.201501766

IF: 13.3

2016-01-01

Small

Abstract:Research on in-plane and vertically-stacked heterostructures of graphene and hexagonal boron nitride (h-BN) have attracted intense attentions for energy band engineering and device performance optimization of graphene. In this review article, recent advances in the controlled syntheses, interfacial structures, and electronic properties, as well as novel device constructions of h-BN and graphene heterostructures are highlighted. Firstly, diverse synthesis approaches for in-plane h-BN and graphene (h-BN-G) heterostructures are reviewed, and their applications in nanoelectronics are briefly introduced. Moreover, the interfacial structures and electronic properties of h-BN-G heterojunctions are discussed, and a zigzag type interface is found to preferentially evolve at the linking edge of the two structural analogues. Secondly, several synthetic routes for the vertically-stacked graphene/h-BN (G/h-BN) heterostructures are also reviewed. The role of h-BN as perfect dielectric layers in promoting the device performance of graphene is presented. Finally, future research directions in the synthesis and application of such heterostructures are discussed.
Creation of a two-dimensional polymer and graphene heterostructure

Honglei Wang,Jing Yang,Pei Zhao,Armin Goelzhaeuser,Wei Liu,Xudong Chen,Zhikun Zheng

DOI: https://doi.org/10.1039/c9nr10858k

IF: 6.7

2020-01-01

Nanoscale

Abstract:van der Waals (vdW) heterostructures generated by stacking of graphene with other two-dimensional (2D) crystalline sheets have produced a new class of "designer" materials which shows great promise for nanoscience and nanotechnology. However, the 2D sheets are obtained either from nature or synthesized by high-energy procedures, which preclude the design of their structures as well as properties from molecular design on demand. Here, we introduced a rationally designed 2D polymer (one-monomer unit thick, freestanding network composed of periodically linked monomers) as a component for heterostructure construction, and created a 2D polymer-graphene heterostructure. The heterostructure has a high chemical stability, and could be thermally stable up to 400 degrees C. In the heterostructure, the 2D polymer doped graphene without changing its intrinsic structure, leading to the enhancement of its electric conductivity by a factor of similar to 2.5. This piece of work opens the door to tune the properties of graphene heterostructures with rational design for specific applications.
Strain-engineering of twist-angle in graphene/hBN superlattice devices

Adolfo De Sanctis,Jake D. Mehew,Saad Alkhalifa,Freddie Withers,Monica F. Craciun,Saverio Russo

DOI: https://doi.org/10.1021/acs.nanolett.8b03854

2018-12-04

Abstract:The observation of novel physical phenomena such as Hofstadter's butterfly, topological currents and unconventional superconductivity in graphene have been enabled by the replacement of SiO$_2$ with hexagonal Boron Nitride (hBN) as a substrate and by the ability to form superlattices in graphene/hBN heterostructures. These devices are commonly made by etching the graphene into a Hall-bar shape with metal contacts. The deposition of metal electrodes, the design and specific configuration of contacts can have profound effects on the electronic properties of the devices possibly even affecting the alignment of graphene/hBN superlattices. In this work we probe the strain configuration of graphene on hBN contacted with two types of metal contacts, two-dimensional (2D) top-contacts and one-dimensional (1D) edge-contacts. We show that top-contacts induce strain in the graphene layer along two opposing leads, leading to a complex strain pattern across the device channel. Edge-contacts, on the contrary, do not show such strain pattern. A finite-elements modelling simulation is used to confirm that the observed strain pattern is generated by the mechanical action of the metal contacts clamped to the graphene. Thermal annealing is shown to reduce the overall doping whilst increasing the overall strain, indicating and increased interaction between graphene and hBN. Surprisingly, we find that the two contacts configurations lead to different twist-angles in graphene/hBN superlattices, which converge to the same value after thermal annealing. This observation confirms the self-locking mechanism of graphene/hBN superlattices also in the presence of strain gradients. Our experiments may have profound implications in the development of future electronic devices based on heterostructures and provide a new mechanism to induce complex strain patterns in 2D materials.

Mesoscale and Nanoscale Physics,Materials Science,Applied Physics
In situ epitaxial engineering of graphene and h-BN lateral heterostructure with a tunable morphology comprising h-BN domains

Dechao Geng,Jichen Dong,Lay Kee Ang,Feng Ding,Hui Ying Yang

DOI: https://doi.org/10.1038/s41427-019-0162-6

IF: 10.761

2019-10-11

NPG Asia Materials

Abstract:Abstract Graphene and hexagonal boron nitride (h-BN), as typical two-dimensional (2D) materials, have long attracted substantial attention due to their unique properties and promise in a wide range of applications. Although they have a rather large difference in their intrinsic bandgaps, they share a very similar atomic lattice; thus, there is great potential in constructing heterostructures by lateral stitching. Herein, we present the in situ growth of graphene and h-BN lateral heterostructures with tunable morphologies that range from a regular hexagon to highly symmetrical star-like structure on the surface of liquid Cu. The chemical vapor deposition (CVD) method is used, where the growth of the h-BN is demonstrated to be highly templated by the graphene. Furthermore, large-area production of lateral G-h-BN heterostructures at the centimeter scale with uniform orientation is realized by precisely tuning the CVD conditions. We found that the growth of h-BN is determined by the initial graphene and symmetrical features are produced that demonstrate heteroepitaxy. Simulations based on the phase field and density functional theories are carried out to elucidate the growth processes of G-h-BN flakes with various morphologies, and they have a striking consistency with experimental observations. The growth of a lateral G-h-BN heterostructure and an understanding of the growth mechanism can accelerate the construction of various heterostructures based on 2D materials.

materials science, multidisciplinary

Planar Graphene/h-Bn/graphene Heterostructures for Protein Stretching and Confinement

Planar Boronic Graphene and Nitrogenized Graphene Heterostructure for Protein Stretch and Confinement

Direct growth of large-area graphene and boron nitride heterostructures by a co-segregation method

An Atomistic Approach for the Structural and Electronic Properties of Twisted Bilayer Graphene-Boron Nitride Heterostructures

Programmable Extreme Pseudomagnetic Fields in Graphene by a Uniaxial Stretch

Periodic buckling patterns of graphene/hexagonal boron nitride heterostructure.

Theoretical study of protein adsorption on graphene/h-BN heterostructures

Heterostrain and Temperature-Tuned Twist Between Graphene/h-Bn Bilayers

Large Scale Graphene/Hexagonal Boron Nitride Heterostructure for Tunable Plasmonics

AA-Stacked Borophene-Graphene Bilayer With Covalent Bonding: Ab Initio Investigation of Structural, Electronic and Elastic Properties.

Strain induced tunable band gap and optical properties of graphene on hexagonal boron nitride

Scalable Synthesis of Monolayer Hexagonal Boron Nitride on Graphene with Giant Bandgap Renormalization

Unraveling the 3D atomic structure of a suspended graphene/hBN van der Waals heterostructure

Strain-tunable band gap in graphene/h-BN hetero-bilayer

Electric Field Effect of Sliding Graphene/hexagonal Boron Nitride Heterobilayer

Quasi-freestanding Monolayer Heterostructure of Graphene and Hexagonal Boron Nitride on Ir(111) with a Zigzag Boundary.

One-Pot Confined Epitaxial Growth of 2D Heterostructure Arrays

Hexagonal Boron Nitride–Graphene Heterostructures: Synthesis and Interfacial Properties

Creation of a two-dimensional polymer and graphene heterostructure

Strain-engineering of twist-angle in graphene/hBN superlattice devices

In situ epitaxial engineering of graphene and h-BN lateral heterostructure with a tunable morphology comprising h-BN domains