Abstract:Quantum-dot light-emitting diodes (QLEDs) may combine superior properties of colloidal quantum dots (QDs) and advantages of solution-based fabrication techniques to realize high-performance, large-area, and low-cost electroluminescence devices. In the state-of-the-art red QLED, an ultrathin insulating layer inserted between the QD layer and the oxide electron-transporting layer (ETL) is crucial for both optimizing charge balance and preserving the QDs' emissive properties. However, this key insulating layer demands very accurate and precise control over thicknesses at sub-10 nm level, causing substantial difficulties for industrial production. Here, it is reported that interfacial exciton quenching and charge balance can be independently controlled and optimized, leading to devices with efficiency and lifetime comparable to those of state-of-the-art devices. Suppressing exciton quenching at the ETL-QD interface, which is identified as being obligatory for high-performance devices, is achieved by adopting Zn0.9Mg0.1O nanocrystals, instead of ZnO nanocrystals, as ETLs. Optimizing charge balance is readily addressed by other device engineering approaches, such as controlling the oxide ETL/cathode interface and adjusting the thickness of the oxide ETL. These findings are extended to fabrication of high-efficiency green QLEDs without ultrathin insulating layers. The work may rationalize the design and fabrication of high-performance QLEDs without ultrathin insulating layers, representing a step forward to large-scale production and commercialization.

Easily controlled 2D GO film as electronic barrier layer to realize charge transport equilibrium of QLED with greatly enhanced EQE

Fully Transparent Quantum Dot Light-Emitting Diode with a Laminated Top Graphene Anode

Doping bilayer hole-transport polymer strategy stabilizing solution-processed green quantum-dot light-emitting diodes

High-Performance, Solution-Processed, and Insulating-Layer-Free Light-Emitting Diodes Based on Colloidal Quantum Dots.

Perovskite QLED with an External Quantum Efficiency of over 21% by Modulating Electronic Transport.

Improved Performance of Quantum Dot Light-Emitting Diodes by Hybrid Electron Transport Layer Comprised of ZnO Nanoparticles Doped Organic Small Molecule

Boosting the efficiency of inverted quantum dot light-emitting diodes by balancing charge densities and suppressing exciton quenching through band alignment

Ligand-Solvent Coordination Enables Comprehensive Trap Passivation for Efficient Near-Infrared Quantum Dot Light-Emitting Diodes

Charge Carrier Regulation for Efficient Blue Quantum-Dot Light-Emitting Diodes Via a High-Mobility Coplanar Cyclopentane[b]thiopyran Derivative

High-performance green and blue quantum-dot light-emitting diodes with eliminated charge leakage

83‐4: High‐Performance Inverted Green and Red InP Quantum‐dot Light Emitting Diodes with Robust ZnS Electron Transport Interlayer

High efficiency quantum-dot light-emitting diodes enabled by boosting hole injection

Ultralow Roll‐Off Quantum Dot Light‐Emitting Diodes Using Engineered Carrier Injection Layer

A Novel Crosslinked Hole Transport Layer with Enhanced Charge Injection Balance for Highly Efficient Inkjet-Printed Blue Quantum Dot-Based Light-Emitting Diodes

Interface Passivation and Hole Injection Improvement of Solution‐Processed White Organic Light‐Emitting Diodes through Embedding an Ultrathin Graphene Oxide Layer

Highly Efficient and Super Stable Full‐Color Quantum Dots Light‐Emitting Diodes with Solution‐Processed All‐Inorganic Charge Transport Layers

Ultra-bright and energy-efficient quantum-dot LEDs by idealizing charge injection

Improved Color Purity and Efficiency of Blue Quantum Dot Light-Emitting Diodes

Performance improvements in all-solution processed inverted QLEDs realized by inserting an electron blocking layer

Balanced charge transport and enhanced performance of blue quantum dot light-emitting diodes via electron transport layer doping

All-Solution-Processed Quantum Dot Light Emitting Diodes Based on Double Hole Transport Layers by Hot Spin-Coating with Highly Efficient and Low Turn-On Voltage.