Fluoro-alkyl Substituted Isothianaphthene Bisimides As Stable N-Type Semiconductors

Xiaolong Chen,Dongwei Zhang,Yaowu He,Muhammad Umair Ali,Yuting Wu,Changbin Zhao,Peiheng Wu,Chaoyi Yan,Fred Wudl,Hong Meng

DOI: https://doi.org/10.1039/d0qm00137f

IF: 8.6834

2020-01-01

Materials Chemistry Frontiers

Abstract:Two fluoro-alkyl substituted isothianaphthene bisimide materials with high solubility and their applications in stable n-type OTFTs are demonstrated.

What problem does this paper attempt to address?

Isothianaphthene Diimide: an Air-Stable N-Type Semiconductor

Xiaolong Chen,Yaowu He,Muhammad Umair Ali,Yu He,Yanan Zhu,Aiyuan Li,Changbin Zhao,Igor F. Perepichka,Hong Meng

DOI: https://doi.org/10.1007/s11426-019-9555-4

2019-01-01

Science China Chemistry

Abstract:Herein, we propose a new strategy to develop air-stable n-type organic semiconductors with non-classical thiophene aromatic diimide derivatives by replacing aromatic naphthalene with a heteroaromatic isothianaphthene core. We designed and successfully synthesized the isothianaphthene core based diimide material, N,N′-bis(n-hexyl)isothianaphthene-2,3,6,7-tetra-carboxylic acid diimide (BTDI-C6) as an n-type semiconductor. Compared to N,N′-bis(n-hexyl)naphthalene-1,4,5,8-tetracarboxylic acid diimide (NDI-C6), BTDI-C6 possesses a deeper LUMO energy level of −4.21 eV, which is 0.32 eV lower than that of NDI-C6. Both molecular modelling and experimental results elucidated that organic thin film transistors (OTFTs) based on both of these materials exhibit comparable mobilities; however, the threshold voltage of BTDI-C6 based device (+7.5 V) is significantly lower than that of NDI-C6 based counterpart (+34 V). Moreover, the low-lying LUMO energy level of BTDI-C6 ensures excellent air-stability which is further validated by the device performance. In addition, BTDI-C6 shows high luminescence while NDI-C6 is not luminescent at all in solution, which reveals the potential application of our newly synthesized material in n-type light-emitting transistors.
Solution-processed and Air-Stable N-Type Organic Thin-Film Transistors Based on Thiophene-Fused Dicyanoquinonediimine (DCNQI) Deriatives.

Shiyan Chen,Yan Zhao,Altan Bolag,Jun-ichi Nishida,Yunqi Liu,Yoshiro Yamashita

DOI: https://doi.org/10.1021/am300822z

IF: 9.5

2012-01-01

ACS Applied Materials & Interfaces

Abstract:π-Conjugated systems 2a and 2b containing thiophene-fused DCNQI with long alkyl and trifluoromethylphenyl groups were synthesized as potential active materials for solution-processed and air-stable n-type organic thin-film transistors (OTFTs). The electrochemical measurements revealed that the lowest unoccupied molecular orbital (LUMO) of the compounds have an energy level less than -4.0 eV, indicating air stable n-type materials. The long alkyl groups endowed the compounds good solubility and solution-processability. X-ray diffraction measurements revealed the difference of the molecular arrangement depending on the alkyl groups, which were also observed in the UV-vis absorptions of the films. A relatively good mobility up to 0.003 cm(2) V(-1) s(-1) for 2a by spin-coating was obtained with good air stability.
Benzodithiophene/Benzothiadiazole-Based ADA-Type Optoelectronic Molecules: Influence of Fluorine Substitution

Long Liang,Li-Na Liu,Xue-Qiang Chen,Xuan Xiang,Jun Ling,Zheng-Quan Lu,Jing-Jing Li,Wei-Shi Li

DOI: https://doi.org/10.6023/cjoc201808034

2019-01-01

Chinese Journal of Organic Chemistry

Abstract:Fluorination on conjugated components is one of popular strategies to modify organic optoelectronic materials. Following the research of a benzodithiophene/benzothiadiazole ADA-type optoelectronic molecule, two benzothiadiazole (BT) units were fluorinated with different numbers and positions, and the change in basic properties and performances for field-effect transistors and manic solar cells was investigated. It was found that when the F-substitution number increases, the molecule enhances thermal stability, decreases solubility, lowers HOMO and LUMO energy levels, but almost does not alter light absorption range. Furthermore, investigations on organic field-effect transistors found the molecular hole mobility reduces with only one F-substituent at outer position of BT units, while increases up to 0.27 cm(2).V-1.s(-1 )with two F substituents on BT units. However, when these materials are applied in organic solar cells, the fluorinated ones enhance open-circuit voltage, but deteriorate active layer morphology, finally leading to decrease in short-circuit current and device efficiency.
Air Stable N-Channel Organic Semiconductors for Thin Film Transistors Based on Fluorinated Derivatives of Perylene Diimides

H. Z. Chen,M. M. Ling,X. Mo,M. M. Shi,M. Wang,Z. Bao

DOI: https://doi.org/10.1021/cm062352w

IF: 10.508

2007-01-01

Chemistry of Materials

Abstract:A series of n-type organic semiconductors based on perylene diimides were synthesized. These materials were fully characterized by FTIR and UV-vis spectra as well as elemental analysis. Thin film transistors (TFTs) using a top-contact geometry were fabricated by vapor deposition of these perylene diimide derivatives as the semiconductive channel on surface treated SiO2/Si substrates at various substrate temperatures. The measured TFT performance depended heavily on the type and the number of substituents. We found higher field-effect mobilities for compounds with stronger electron-withdrawing substituents. TFTs with fluorinated perylene diimides showed much better performance in air than a chlorinated derivative. The highest mobility, ca. 0.068 cm(2)/V s, was measured for the compound with the most fluorine substituents (i.e., N,N'-diperfluorophenyl-3,4,9,10-perylenetetracarboxylic diimide (8)). The effect of molecular structure on film morphology was observed using an atomic force microscope (AFM). The correlation between the number of fluorine substitutions and the TFT air stability was studied. Our results showed better device air stability for compounds with more fluorine substituents, due to their lower LUMO energy levels. Other factors affecting TFT performance, such as substrate temperature and SiO2 dielectric surface treatment, were also investigated.
Naphthoylene(trifluoromethylbenzimidazole)-dicarboxylic acid imides for high-performance n-type organic field-effect transistors.

Ping Deng,Yan Yan,Sui-Dong Wang,Qing Zhang

DOI: https://doi.org/10.1039/c2cc17272k

IF: 4.9

2012-01-01

Chemical Communications

Abstract:1,8-Naphthoylene(trifluoromethylbenzimidazole)-4,5-dicarboxylic acid imide (NTFBII) derivatives were synthesized. The OFET devices based on these new materials showed typical n-type OFET behavior and achieved an electron mobility as high as 0.10 cm(2) V-1 s(-1) with good bias stress stability.
Effects of P-(Trifluoromethoxy)benzyl and P-(Trifluoromethoxy)phenyl Molecular Architecture on the Performance of Naphthalene Tetracarboxylic Diimide-Based Air-Stable N-Type Semiconductors.

Dongwei Zhang,Liang Zhao,Yanan Zhu,Aiyuan Li,Chao He,Hongtao Yu,Yaowu He,Chaoyi Yan,Osamu Goto,Hong Meng

DOI: https://doi.org/10.1021/acsami.6b04753

IF: 9.5

2016-01-01

ACS Applied Materials & Interfaces

Abstract:N,N'-Bis(4-trifluoromethoxyphenyl) naphthalene-1,4,5,8-tetracarboxylic acid diimide (NDI-POCF3) and N,N'-bis(4-trifluoromethoxybenzyl) naphthalene-1,4,5,8-tetracarboxylic acid diimide (NDI-BOCF3) have similar optical and electrochemical properties with a deep LUMO level of approximately 4.2 eV, but exhibit significant differences in electron mobility and molecular packing. NDI-POCF3 exhibits nondetectable charge mobility. Interestingly, NDI-BOCF3 shows air-stable electron transfer performance with enhanced mobility by increasing the deposition temperature onto the octadecyltrichlorosilane (OTS)-modified SiO2/Si substrates and achieves electron mobility as high as 0.7 cm(2) V(-1) s(-1) in air. The different mobilities of those two materials can be explained by several factors including thin-film morphology and crystallinity. In contrast to the poor thin-film morphology and crystallinity of NDI-POCF3, NDI-BOCF3 exhibits larger grain sizes and improved crystallinities due to the higher deposition temperature. In addition, the theoretical calculated transfer integrals of the intermolecular lowest unoccupied molecular orbital (LUMO) of the two materials further show that a large intermolecular orbital overlap of NDI-BOCF3 can transfer electron more efficiently than NDI-POCF3 in thin-film transistors. On the basis of fact that the theoretical calculations are consistent with the experimental results, it can be concluded that the p-(trifluoromethoxy) benzyl (BOCF3) molecular architecture on the former position of the naphthalene tetracarboxylic diimides (NDI) core provides a more effective way to enhance the intermolecular electron transfer property than the p-(trifluoromethoxy) phenyl (POCF3) group for the future design of NDI-related air-stable n-channel semiconductor.
Fused Bithiophene Imide Oligomer and Diketopyrrolopyrrole Copolymers for N-Type Thin-Film Transistors.

Yujie Zhang,Linjing Tang,Huiliang Sun,Shaohua Ling,Kun Yang,Mohammad Afsar Uddin,Han Guo,Yumin Tang,Yang Wang,Kui Feng,Yongqiang Shi,Juqing Liu,Shiming Zhang,Han Young Woo,Xugang Guo

DOI: https://doi.org/10.1002/marc.201900394

IF: 5.006

2019-01-01

Macromolecular Rapid Communications

Abstract:Diketopyrrolopyrrole (DPP)-based copolymers have received considerable attention as promising semiconducting materials for high-performance organic thin-film transistors (OTFTs). However, these polymers typically exhibit p-type or ambipolar charge-transporting characteristics in OTFTs due to their high-lying highest occupied molecular orbital (HOMO) energy levels. In this work, a new series of DPP-based n-type polymers have been developed by incorporating fused bithiophene imide oligomers (BTIn) into DPP polymers. The resulting copolymers BTIn-DPP show narrow band gaps as low as 1.27 eV and gradually down-shifted frontier molecular orbital energy levels upon the increment of imide group number. Benefiting from the coplanar backbone conformation, well-delocalized π-system, and favorable polymer chain packing, the optimal polymer in the series shows promising n-type charge transport with an electron mobility up to 0.48 cm2 V-1 s-1 in OTFTs, which is among the highest values for the DPP-based n-type polymers reported to date. The results demonstrate that incorporating fused bithiophene imide oligomers into polymers can serve as a promising strategy for constructing high-performance n-type polymeric semiconductors.
A Thermally Stable Anthracene Derivative for Application in Organic Thin Film Transistors

Yang Zhao,Lijia Yan,Imran Murtaza,Xiao Liang,Hong Meng,Wei Huang

DOI: https://doi.org/10.1016/j.orgel.2017.01.005

IF: 3.868

2017-01-01

Organic Electronics

Abstract:A novel multifunctional anthracene derivative 2,6-bis(dibenzo[b,d]furan-3-yl)anthracene) (BDBFAnt), by coupling anthracene moiety with dibenzo[b,d]furan units attached to its peripheral position, has been designed and synthesized for application in OTFT devices. Introduction of dibenzo[b,d]furan units in OTFTs is the first example and is highly innovative due to their suitable carrier transport ability, excellent thermal stability, fine film-forming property, rigid planarity and outstanding fluorescence. The fabricated OTFTs demonstrate a decent hole mobility (3.0 cm(2)/V s) and favorable green solid fluorescence with excellent thermal stability (up to 220 degrees C), which expound on the great potential of our material in organic electronics. (C) 2017 Elsevier B.V. All rights reserved.
N-Type Semiconducting Polymers Based on an Bithiophene Imide-Bridged Isoindigo for Organic Field-Effect Transistors

Min Liu,Dong Wang,Jianfeng Li,Junwei Wang,Sang Young Jeong,Han Young Woo,Xianyu Deng,Kun Yang,Xugang Guo

DOI: https://doi.org/10.1016/j.dyepig.2024.112176

IF: 5.122

2024-01-01

Dyes and Pigments

Abstract:n-Type polymer semiconductors are essential for enabling high-performance organic electronic devices; however their development still remains a challenge. Herein, we reported a new electron-deficient building block, i.e. bithiophene imide (BTI)-bridged isoindigo (IID), BTIID, through a Knoevenagel condensation reaction between the bisaldehyde BTI and the alkylated indolinones. Three donor-acceptor (D-A) copolymers were then successfully synthesized via standard Stille coupling reaction based on this novel building block, which exhibit highly planar backbones and low-lying lowest unoccupied molecular orbitals (LUMO) energy levels. When integrated into organic field-effect transistors (OFETs), these polymers demonstrated unipolar n-type transport characteristics with a highest electron mobility of 5.79 × 10−4 cm2 V−1 s−1. Our research results indicate that the design of strong electron-withdrawing units via integrating two different electron-acceptor units into one single structure represents a promising strategy for developing n-type polymer semiconductors with low-lying LUMO energy levels.
Symmetrical Fluorescent Oligothiophene and Benzene Centered Bispyrenoimidazole Derivatives with Double N-Dodecyl Chains Showing High Thermal Stability

Yu-Xin Peng,Yuan Dai,Na Wang,Wei Huang

DOI: https://doi.org/10.1016/j.tetlet.2014.09.003

IF: 2.032

2014-01-01

Tetrahedron Letters

Abstract:A family of symmetrical oligothiophene (dithiophene, terthiophene, and quaterthiophene) or benzene centered bispyrenoimidazole derivatives, having the same coplanar pyrenoimidazole terminal groups at each side, has been synthesized via Radziszewski, N-alkylation, and the following Pd(PPh3)4 catalyzed Suzuki and Stille coupling reactions. Double n-dodecyl chains are introduced to the molecules at the same time in order to increase their solubility in organic solvents. UV–vis and fluorescence spectra as well as thermal properties have been studied. The results demonstrate that compound 4 with a benzene linker displays the strongest fluorescence intensity, and oligothiophene centered bispyrenoimidazole derivatives 5–7 show obvious bathochromic shifts compared with benzene centered compound 4. It is worth mentioning that this family of compounds exhibits excellent thermal stability with the decomposition temperature higher than 400°C even if the incorporation of double n-dodecyl chains. Furthermore, X-ray single-crystal structures of one representative compound 4·(CHCl3)2 and an intermediate 3 have been described.
Novel Highly Stable Semiconductors Based On Phenanthrene For Organic Field-Effect Transistors

Hongkun Tian,Jianwu Shi,Shaoqiang Dong,Donghang Yan,Lixiang Wang,Yanhou Geng,Fosong Wang

DOI: https://doi.org/10.1039/b606759j

2006-01-01

Abstract:Two novel phenanthrene-based conjugated oligomers were synthesized and used as p-channel semiconductors in field-effect transistors; they exhibit high mobility and excellent stability during long-time ambient storage and under UV irradiation.
Highly Ambient-Stable Organic Thin-Film Transistors Fabricated Using Naphthalene Diimide and Thienylene-Vinylene-Thienylene-Based N-Type Polymers with Different Electron-Withdrawing Groups

Dahye Kim,Huihui Zhu,Ao Liu,Hee Su Kim,Yong-Young Noh,Do-Hoon Hwang

DOI: https://doi.org/10.1021/acs.jpcc.0c06531

2020-01-01

Abstract:We designed, synthesized, and characterized a series of naphthalene diimide (NDI)-based polymers with pristine (H)-, fluorine (F)-, chlorine (Cl)-, and cyano (CN)-substituted thienylene-vinylene-thienylene (TVT) moieties. The theoretical and experimental results showed that a stronger electron-withdrawing group in the TVT unit reduces the energy of the lowest unoccupied molecular orbital (LUMO), which could enhance the air stability of NDI-based organic thin-film transistors (OTFTs). However, this improved stability was accompanied by a reduction in electron mobility to various degrees. The reason is that the F, Cl, and CN moieties increased the dihedral angles in the polymer structure and raised the activation energy and the width of density of states (DOS) in the device systems. We believe that a clear understanding of the mechanism will assist in the design of n-channel OTFTs with both high mobility and high ambient stability.
Oligofluorene−Thiophene Derivatives As High-Performance Semiconductors for Organic Thin Film Transistors

H Meng,J Zheng,AJ Lovinger,BC Wang,PG Van Patten,ZN Bao

DOI: https://doi.org/10.1021/cm020866z

IF: 10.508

2003-01-01

Chemistry of Materials

Abstract:A series of alkyl chain end-capped oligofluorene-thiophenes have been prepared with high yields using Suzuki or Stille coupling reactions. The electronic and optical properties of the thin films deposited at different substrate temperatures have been investigated. Morphological studies using transmission electron microscopy (TEM) revealed well-interconnected microcrystalline domains in these thin films. X-ray diffraction measurements of the vacuum-evaporated films showed enhanced crystalline order with increasing substrate deposition temperature. Thermal analysis as well as electrochemical measurements of the materials indicated that the new oligomers have high thermal and oxidative stability. Highly ordered polycrystalline vacuum-evaporated films with charge carrier mobility as high as 0.12 cm(2) V-1 s(-1) have been achieved with 5,5'-bis(7-hexyl-9H-fluoren-2-yl)-2,2'-bithiophene (DHFTTF). Thin film field-effect transistor (TFT) devices made from these materials showed remarkable stability even after LTV (366 nm) irradiation for more than 48 h in air. The semiconductors exhibit high on/off ratios (up to 105) and no significant decrease in mobility and on/off ratio over several months in air with exposure to ambient light. Finally, bright emission colors from greenish yellow to orange-red were observed in this new series of oligomer solid films excited with LTV light (366 nm). In addition, a comparative study of the newly synthesized oligomers with alpha,alpha'-dihexylsexithiophene (DH6T), one of the most widely investigated oligothiophenes, is presented. The current approach to the molecular design can be applied toward the rational design of new TFT materials.
n-Type conjugated polymers comprising bithiophene imide and multifluorinated thiophene moieties synthesized by direct arylation polycondensation

Houji Cai,Xuwen Zhang,Yibo Shi,Chenhui Xu,Tianzuo Wang,Cheng Wang,Tian Du,Yunfeng Deng,Yanhou Geng

DOI: https://doi.org/10.1039/d2tc00732k

IF: 6.4

2022-01-01

Journal of Materials Chemistry C

Abstract:n-Type conjugated polymers were synthesized by environmentally benign direct arylation polycondensation. With these polymers, OTFTs with μ e of up to 0.72 cm 2 V −1 s −1 were fabricated.

materials science, multidisciplinary,physics, applied
New tetrathiafulvalene fused-naphthalene diimides for solution-processible and air-stable p-type and ambipolar organic semiconductors

luxi tan,yunlong guo,yang yang,guanxin zhang,deqing zhang,gui yu,wei xu,yunqi liu

DOI: https://doi.org/10.1039/c2sc20303k

IF: 8.4

2012-01-01

Chemical Science

Abstract:New conjugated electron donor-acceptor molecules with tetrathiafulvalene (TTF) fused-naphthalene diimide frameworks (1-6) are synthesized and investigated. The NDI cores are flanked by TTF and 2-(1,3-dithiol-2-ylidene)malonitrile moieties within 1-3, whereas compounds 4-6 contain two TTF moieties. Based on cyclic voltammetric and absorption spectral studies, the LUMO and HOMO energies of 1-3 are estimated to be ca. -4.3 eV and ca. -5.1 eV, and those of 4-6 are ca. -4.1 eV and ca. -5.0 eV, respectively. These values are consistent with theoretical calculations. Thin films of 1-6 are easily prepared with the spin-coating technique and the resulting OFETs are successfully fabricated with conventional procedures. The OFETs results reveal that compounds 1-3 behave as ambipolar semiconductors and 4-6 as p-type semiconductors. Among 1-3, compound 3 exhibits relatively high hole and electron mobilities in air, reaching 0.03 and 0.003 cm(2) V-1 s(-1), respectively, after annealing at 160 degrees C. The OFET based on a thin film of 5 shows the best performance with mu(h) = 0.31 cm(2) V-1 s(-1), I-on/(off) 10(4) among compounds 4-6 after annealing at 160 degrees C. The thin films of 1-6 are investigated with XRD and AFM, and the data can well interpret the variation of carrier mobilities of 1-6 after annealing. Moreover, the influences of alkyl chains in 1-6 on the intermolecular arrangements and carrier mobilities are also discussed.
Fluoranthene Imide Dimers with Strong Isomeric Effects on the Charge Transport Properties

Ting-Yu Wang,Huangcheng Liu,Miao Liu,Yen-Han Shih,Xinyu Yu,Zhong'an Li,Chu-Chen Chueh

DOI: https://doi.org/10.1039/d4cp03245d

IF: 3.3

2024-10-10

Physical Chemistry Chemical Physics

Abstract:To date, the development of high-performance n-type organic semiconductors has remained challenging due to the scarcity of highly electron-deficient π-conjugated structural units and the difficulty of controlling intermolecular packing in the thin-film state. In addition, there have been few reports on the use of dimer design to tune the optoelectronic properties of materials. Herein, we report new cyano-substituted fluoranthene imide-based dimers (F16 and F17) for small-molecule n-type organic semiconductors. It is noteworthy that substituents at different positions lead to different film morphologies and very distinct thermal aggregation behaviors due to different dihedral angles. The self-assembly behavior of F17 improves thermal stability. Therefore, F17, which has a closer cyano groups structure, exhibits better field-effect transistor performance, with a maximum mobility of 6.57×10^(-4) cm2 V–1 s–1, while F16 does not exhibit any transistor performance.

chemistry, physical,physics, atomic, molecular & chemical
High Mobility n‐Type Imide‐Based Semiconductor with Unusual Single‐Crystal Packing Structure in Solution‐Processed Thin Film

Miao Liu,Yen‐Han Shih,Xinyu Yu,Ming‐Hsuan Yu,Xianglang Sun,Chu‐Chen Chueh,Zhong'an Li

DOI: https://doi.org/10.1002/adfm.202405171

IF: 19

2024-05-30

Advanced Functional Materials

Abstract:A simple synthetic route is developed to construct cyano‐substituted fluoranthene imides, one of which with cyano groups at 4,9‐sites and 2‐ethylhexyl chain exhibits a highly ordered single crystal‐like molecular packing in solution‐processed thin films, and thus a high electron mobility of 0.116 cm2 V−1 s−1 is achieved based on the solution‐processed n‐type organic field‐effect transistors. Solid‐state molecular arrangement has been recognized as the most important role in the charge transport properties of organic semiconductors. Although highly ordered molecular stacking is achieved in single crystals, maintaining single‐crystal molecular packing in solution‐processed thin films remains a significant challenge. Herein, a new type of n‐type organic semiconductors based on an asymmetric fluoranthene imide unit is reported, whose intermolecular packing and aggregation behavior in the thin film state can be effectively controlled by regulating the cyano substitution sites and alkyl chain types in the imide group. F10 with cyano groups at 4,9‐sites and branched 2‐ethylhexyl chain encouragingly shows a highly ordered single‐crystal‐like molecular packing in solution‐processed thin film after thermal annealing, and thus the resulting organic field‐effect transistors exhibit impressive charge transport performance, with the electron mobility as high as 0.116 cm2 V−1 s−1. This work opens a new avenue for developing high‐performance solution‐processed n‐type semiconductors.

materials science, multidisciplinary,nanoscience & nanotechnology,physics, applied,chemistry, physical, condensed matter
Air-stable N-Type Semiconductor: Core-Perfluoroalkylated Perylene Bisimides.

Yan Li,Lin Tan,Zhaohui Wang,Hualei Qian,Yuba Shi,Wenping Hu

DOI: https://doi.org/10.1021/ol703046w

IF: 5.2

2008-01-01

Organic Letters

Abstract:A series of core-perfluoroalkylated perylene bisimides (PBIs) have been efficiently synthesized by copper-mediated perfluoroalkylation of dibrominated PBIs. Their aromatic cores are highly twisted due to the steric encumbrance in the bay regions as revealed by single-crystal X-ray analysis. The organic field-effect transistors (OFETs) incorporating these new n-type semiconductors show remarkable air-stability and good field effect mobility.
A novel organic n-type material: fluorinated perylene diimide

Hong-Zheng Chen,Min-Min Shi,Tom Aernouts,Mang Wang,Gustaaf Borghs,Paul Heremans

DOI: https://doi.org/10.1016/j.solmat.2004.07.056

IF: 6.9

2005-01-01

Solar Energy Materials and Solar Cells

Abstract:In order to increase the dissociation efficiency of electron–hole pairs (excitons) in organic solar cells, and to enhance the solubility of organic materials for easy fabrication, a novel perylene diimide with multiple strongly electron-withdrawing F atoms, N,N′-diperfluorophenyl-3,4,9,10-perylenetetracarboxylic diimide (DFPP), was designed and synthesized. The solubility of DFPP was improved greatly compared to its non-fluorinated parent, N,N′-diphenyl-3,4,9,10-perylenetetracarboxylic diimide (DPP), which might relate to the spatial arrangement of the phenyl versus the pentafluorophenyl groups. The field-effect-transistor (FET) with spin-coated DFPP film as transport layer was prepared, and its electron mobility was measured as 1.29×10−5cm2V−1s−1, 3.4 times higher than that from vacuum-deposited DPP film, demonstrating its potential applications in organic optoelectronic devices.
Preparation, Spectral Properties, and Electron Affinity of Bis(Thiadiazolo)Quinoxaline and Bis(Thiadiazolo)Phenanthroquinoxaline As N-Type Semiconductors

Tsutomu Ishi-i,Taro Nakanishi,Yuuki Teshima,Takeshi Yasuda,Liyuan Han

DOI: https://doi.org/10.1246/cl.2011.1252

2011-01-01

Chemistry Letters

Abstract:Bis(thiadiazolo)phenanthroquinoxaline and bis(thiadiazolo)quinoxaline derivatives were prepared as a new candidate of n-type semiconductors and their electronic properties were investigated by spectroscopic and electrochemical measurements. The bis(thiadiazolo)phenanthroquinoxaline having the trifluoromethyl groups indicates n-type characteristic in an organic field-effect transistor.

Fluoro-alkyl Substituted Isothianaphthene Bisimides As Stable N-Type Semiconductors

Isothianaphthene Diimide: an Air-Stable N-Type Semiconductor

Solution-processed and Air-Stable N-Type Organic Thin-Film Transistors Based on Thiophene-Fused Dicyanoquinonediimine (DCNQI) Deriatives.

Benzodithiophene/Benzothiadiazole-Based ADA-Type Optoelectronic Molecules: Influence of Fluorine Substitution

Air Stable N-Channel Organic Semiconductors for Thin Film Transistors Based on Fluorinated Derivatives of Perylene Diimides

Naphthoylene(trifluoromethylbenzimidazole)-dicarboxylic acid imides for high-performance n-type organic field-effect transistors.

Effects of P-(Trifluoromethoxy)benzyl and P-(Trifluoromethoxy)phenyl Molecular Architecture on the Performance of Naphthalene Tetracarboxylic Diimide-Based Air-Stable N-Type Semiconductors.

Fused Bithiophene Imide Oligomer and Diketopyrrolopyrrole Copolymers for N-Type Thin-Film Transistors.

A Thermally Stable Anthracene Derivative for Application in Organic Thin Film Transistors

N-Type Semiconducting Polymers Based on an Bithiophene Imide-Bridged Isoindigo for Organic Field-Effect Transistors

Symmetrical Fluorescent Oligothiophene and Benzene Centered Bispyrenoimidazole Derivatives with Double N-Dodecyl Chains Showing High Thermal Stability

Novel Highly Stable Semiconductors Based On Phenanthrene For Organic Field-Effect Transistors

Highly Ambient-Stable Organic Thin-Film Transistors Fabricated Using Naphthalene Diimide and Thienylene-Vinylene-Thienylene-Based N-Type Polymers with Different Electron-Withdrawing Groups

Oligofluorene−Thiophene Derivatives As High-Performance Semiconductors for Organic Thin Film Transistors

n-Type conjugated polymers comprising bithiophene imide and multifluorinated thiophene moieties synthesized by direct arylation polycondensation

New tetrathiafulvalene fused-naphthalene diimides for solution-processible and air-stable p-type and ambipolar organic semiconductors

Fluoranthene Imide Dimers with Strong Isomeric Effects on the Charge Transport Properties

High Mobility n‐Type Imide‐Based Semiconductor with Unusual Single‐Crystal Packing Structure in Solution‐Processed Thin Film

Air-stable N-Type Semiconductor: Core-Perfluoroalkylated Perylene Bisimides.

A novel organic n-type material: fluorinated perylene diimide

Preparation, Spectral Properties, and Electron Affinity of Bis(Thiadiazolo)Quinoxaline and Bis(Thiadiazolo)Phenanthroquinoxaline As N-Type Semiconductors