Synergy Effect of Co-Doping Sc and Y in Sb2Te3 for Phase-Change Memory

Shuwei Hu,Jiankai Xiao,Jian Zhou,Stephen R. Elliott,Zhimei Sun

DOI: https://doi.org/10.1039/d0tc01693d

IF: 6.4

2020-01-01

Journal of Materials Chemistry C

Abstract:Co-doping Sc and Y is a feasible way to obtained better-performance and moderate-cost Sb2Te3 phase-change materials.

What problem does this paper attempt to address?

Co-doping: An effective strategy for developing stable and high-speed Sb2Te-based phase-change memory

Jing Hu,Cong Lin,Yan Cheng,Yonghui Zheng,Tao Wei,Wanfei Li,Yun Ling,Qianqian Liu,Miao Cheng,Ruirui Wang,Sannian Song,Zhitang Song,Yinghui Wei,Bo Liu

DOI: https://doi.org/10.1063/5.0146349

IF: 4

2023-05-29

Applied Physics Letters

Abstract:Balancing operation speed and thermal stability is a big challenge in phase change memory (PCM). In this work, a carbon (C) and chromium (Cr) co-doped Sb2Te strategy has been proposed for achieving high operation speed and high stability in PCM applications. In general, doping with the appropriate Cr element is beneficial to improve thermal stability, but it will sacrifice its operation speed. C-doping can enhance thermal stability and retain its fast phase transition properties due to the carbon elements tend to form agglomerates in the host that ameliorate disorder of the amorphous phase without loss of the phase transition rate. Intriguingly, the as-prepared C1.19Cr0.23Sb2Te material exhibits good data retention (T10-year @ 155.0 °C) and low-volume change rate (1.8%), as well as fast switching speed (4 ns) and good endurance (>1 × 105 cycles). This research indicates that C and Cr co-doping is an effective method to achieve excellent stability of phase-change materials without sacrificing the phase-transition rate of Sb2Te materials.

physics, applied
Tuning Thermal Stability and Power Consumption of Sb2Te3 Phase Change Memory with Metallic Elements

Mingyue Shao,Yang Qiao,Sannian Song,Xing Ding,Zhitang Song,Yuan Xue

DOI: https://doi.org/10.1002/aelm.202300890

IF: 6.2

2024-03-31

Advanced Electronic Materials

Abstract:The drawbacks of low thermal stability and high power consumption pose challenges to the application of phase change materials in the automotive industry and in‐memory computing. Numerous studies are conducted to enhance the performance of these materials. In this study, four metallic doping elements are selected, and their effects on Sb2Te3 are meticulously analyzed through experiments and ab initio calculations. Phase change materials have issues in the automotive industry and in‐memory computing due to their limited thermal stability and high power consumption. Consequently, numerous studies are conducted to enhance the performance of these materials. Uncertainty persists regarding the effects and mechanisms of various doping on the parent material. In this study, four metallic doping elements are selected, and their effects on Sb2Te3 are meticulously analyzed through experiments and ab initio calculations. The thermal stability of Sb2Te3 has been somewhat enhanced by doping these four elements, with Ta doping having the most impact. According to the ab initio molecular dynamics, this improvement results from the tetrahedral centered In and the increased coordination numbers of Ta, Ti, and Sc. Sc located at the center of the octahedron can accelerate the crystallization process. Ta, in particular, exerts the greatest influence on the migration rates of Sb and Te, resulting in the slowest grain growth rate. Simultaneously, it maximizes the delay in the transition from the cubic phase to the hexagonal phase. These features are beneficial for reducing power consumption. The elucidation of the distinct effects of doping elements sets the stage for phase change memory to adapt to various application scenarios.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
Graphite Carbon-Doped Sb 2 Te Nanostructures for Phase-Change Memory Applications

Peng Xu,Yun Meng,Zhen Li,Xiaolin Liu,Jian Zhou,Sannian Song,Zhitang Song,Zhimei Sun,Liangcai Wu

DOI: https://doi.org/10.1021/acsanm.3c01022

IF: 6.14

2023-05-12

ACS Applied Nano Materials

Abstract:High thermal stability, fast operation speed, low thickness variation, and low resistance drift of phase-change nanomaterials are the essential characteristics in phase-change memory (PCM) applications. In this work, we put forward a graphite carbon-doped Sb2Te (C-Sb2Te) chalcogenide with semiconductor process compatibility. Our results prove that the proposed C-Sb2Te has excellent thermal stability and high operation speed. More importantly, the thickness change and resistance drift are only 0.89% and 0.0149, respectively. The C-Sb2Te-based memory device exhibits a high switching speed to the instrument test limit (5 ns) with a large resistance ratio, low operation voltage (2 V), and low power consumption (6.9 pJ). The proposed C-Sb2Te nanostructure material exceeds both conventional Ge2Sb2Te5 and transition-metal-doped Sb2Te materials in terms of its performance. Ab initio molecular dynamics simulations reveal that C–C and C–Sb bonds as well as C–C chains are formed in C-Sb2Te, and C doping constrains phase transition in a small region and refines grains of C-Sb2Te, thus resulting in the high performance. Our study suggests that C-Sb2Te is a potential candidate for high-speed, high-thermal-stability, and high-reliability PCM applications.

materials science, multidisciplinary,nanoscience & nanotechnology
Understanding Phase-Change Behaviors of Carbon-Doped Ge2sb2te5 for Phase-Change Memory Application

Xilin Zhou,Mengjiao Xia,Feng Rao,Liangcai Wu,Xianbin Li,Zhitang Song,Songlin Feng,Hongbo Sun

DOI: https://doi.org/10.1021/am503502q

IF: 9.5

2014-01-01

ACS Applied Materials & Interfaces

Abstract:Phase-change materials are highly promising for next-generation nonvolatile data storage technology. The pronounced effects of C doping on structural and electrical phase-change behaviors of Ge2Sb2Te5 material are investigated at the atomic level by combining experiments and ab initio molecular dynamics. C dopants are found to fundamentally affect the amorphous structure of Ge2Sb2Te5 by altering the local environments of Ge-Te tetrahedral units with stable C-C chains. The incorporated C increases the amorphous stability due to the enhanced covalent nature of the material with larger tetrahedral Ge sites. The four-membered rings with alternating atoms are reduced greatly with carbon addition, leading to sluggish phase transition and confined crystal grains. The lower RESET power is presented in the PCM cells with carbon-doped material, benefiting from its high resistivity and low thermal conductivity.
Ultrahigh overall-performance phase-change memory by Yttrium dragging

Bin Liu,Kaiqi Li,Jian Zhou,Liangcai Wu,Zhitang Song,Weisheng Zhao,Stephen R. Elliott,Zhimei Sun

DOI: https://doi.org/10.1039/d2tc04538a

IF: 6.4

2022-12-23

Journal of Materials Chemistry C

Abstract:Chalcogenide phase-change materials are well-acknowledged as data-storage media and are currently at the forefront as the basis of emerging neuromorphic devices, where analogue memory is used for both data storage and computation. However, neuromorphic devices are functionally more demanding, and the overall optimization of device performance is thus the top priority of phase-change materials development. Here, an ultrahigh overall-performance phase-change random access memory is described, including improved characteristics such as low resistance drift, high data retention, low power consumption, fast operation speed, and good cycling endurance, which has been achieved based on the phase-change materials, Yttrium-doped Sb2Te3. Moreover, the resistance-drift mechanism of amorphous Sb2Te3 is firstly unraveled and attributed to temporal structural relaxation from a highly-stressed state towards an energetically more favorable equilibrium state, based on ab initio molecular-dynamics simulations. The Yttrium dopant modifies the amorphous structure of Sb2Te3 and its atomic-drag effect improves the overall performance of the base material, paving the way toward the development of an advanced neuromorphic computing system.

materials science, multidisciplinary,physics, applied
Atomic Scale Insight into the Effects of Aluminum Doped Sb2Te for Phase Change Memory Application

Yong Wang,Tianbo Wang,Yonghui Zheng,Guangyu Liu,Tao Li,Shilong Lv,Wenxiong Song,Sannian Song,Yan Cheng,Kun Ren,Zhitang Song

DOI: https://doi.org/10.1038/s41598-018-33421-y

IF: 4.6

2018-01-01

Scientific Reports

Abstract:To date, the unpleasant trade-off between crystallization speed and thermal stability for most phase change materials is detrimental to achieve phase change memory (PCM) with both features of high-speed and good-retention. However, it is proved that Al doping in Sb2Te, served as storage media in PCM, favors both a high writing speed (6 ns) and a good retention (103 °C), as well as a low power consumption. Judging by experimental and theoretical investigations, doped Al atoms prefer to replace Sb in Sb2Te lattice, strongly bonded with 6 Te atoms, to form a homogeneous phase. While in amorphous Al doped Sb2Te (AST), Al atoms are in tetrahedral environment, firmly bonded with four Sb/Te atoms. The strong bonding in Al centered tetrahedron in amorphous AST can obstruct the collective motion of Sb atoms near the matrix boundary, leading to the improvement in thermal stability and the confinement in grain size.
Strong atom capture ability and pinning effect by doping an element with large electronegativity difference in Sb 2 Te 3 phase change material

Yuntao Zeng,Rongchuan Gu,Ming Xu,Xiaomin Cheng,Xiangshui Miao

DOI: https://doi.org/10.1016/j.jallcom.2023.172697

IF: 6.2

2023-11-04

Journal of Alloys and Compounds

Abstract:The ultimate goal of memory researchers and developers is to devise a universal memory to replace all memories in complex hierarchies of memory systems. Phase change memory is considered by the International Semiconductor Industry Association as the most likely emerging storage technology to achieve this ambitious goal due to its excellent performance. However, the relatively slow operation speed and poor cycle endurance are stumbling blocks for this purpose. Here, we propose a new doping strategy to construct stable bonding by introducing atoms with large electronegativity differences from the matrix Te atoms enhancing the capture ability and the pinning effect to Te atoms, which facilitates fast nucleation and suppresses migration of Te atoms to achieve significant performance improvement. Using ab initio molecular dynamics simulations, we explore and compare the atomic structures, chemical bonding, and dynamics properties of Hf doped Sb 2 Te 3 (HfST), La doped Sb 2 Te 3 (LaST), Rb doped Sb 2 Te 3 (RbST) and Sr doped Sb 2 Te 3 (SrST). In the XST (X refers to Hf, Rb, La and Sr atoms) systems, the increase of the more stable ring structure fluctuation and the stronger atom capture capability of rings enable more and faster formation of nuclei during crystallization. Higher Peierls-like distortions suggest better thermal stability. The motility of Te atoms is suppressed due to the pinning effect. High coordination of atoms and the concentration reduction of the lone-pair electron and void enable small density difference. Our results show that fast universal memory with good endurance can be achieved by the construction of strong bonding by doping atoms with large electronegativity differences, providing an important guidance for experiments and industries.

materials science, multidisciplinary,chemistry, physical,metallurgy & metallurgical engineering
Cr-doped Sb2Te materials promising for high performance phase-change random access memory

Jing Hu,Cong Lin,Liyu Peng,Tao Wei,Wanfei Li,Yun Ling,Qianqian Liu,Miao Cheng,Sannian Song,Zhitang Song,Jian Zhou,Yan Cheng,Yonghui Zheng,Zhimei Sun,Bo Liu

DOI: https://doi.org/10.1016/j.jallcom.2022.164593

IF: 6.2

2022-07-01

Journal of Alloys and Compounds

Abstract:Transition metal doping is an effective strategy to improve the properties of phase-change random access memory (PCRAM), while the underlying mechanism remains to be sufficiently investigated. Herein, a Cr-doped Sb2Te film is fabricated by co-sputtering and the enhancement mechanism of Cr-doping is deeply investigated by experiments and first-principles calculations. The CrxSb2Te film exhibits excellent performances involving high crystallization temperature (238.9 °C) and good data retention (10 years @161.7 °C) for Cr0.56Sb2Te, low density change rate (3.8%) and high reversible switching speed (5 ns) for Cr0.29Sb2Te, providing a variety of options for different applications. The calculated results show that Cr atoms preferentially substitute the Sb1 site and the CrTe bonds display a stronger ionic bond character in contrast to the covalent bonded SbTe, thus improving the crystalline phase stability and crystallization temperature. Moreover, ab initio molecular dynamics simulations demonstrate that in the amorphous phase Cr atoms locate in defective octahedral coordination. Meanwhile, the homopolar SbSb wrong bond increased with Cr doping and the Cr atoms tend to form tight cluster in the amorphous phase which could benefit for the fast phase-change speed. Our present findings of Cr0.29Sb2Te PCRAM device clearly reveal the enhancement mechanism by Cr doping which provides guidance for developing high-performance PCRAM devices.

materials science, multidisciplinary,chemistry, physical,metallurgy & metallurgical engineering
Doping effects of Ru on Sb2Te and Sb2Te3 as phase change materials studied by first-principles calculations

Zong-Yan Zhao,Shuo Peng,Zhi-Long Tan,Chuan-Jun Wang,Ming Wen

DOI: https://doi.org/10.1016/j.mtcomm.2022.103669

IF: 3.8

2022-06-01

Materials Today Communications

Abstract:In order to meet the requirements of phase change random access memory (PCRAM) for re-writing capability, stability and crystallization rate, phase change materials (PCMs) need to be optimized and modified. In the previous experimental work, we found that Ru doping can significantly improve the stability and reading/writing speed of Sb2Te and Sb2Te3. In order to clarify the underlying physical mechanism of Ru doping effects on the improvement of PCRAM performance of Sb2Te and Sb2Te3, in this work, we further used the First-principles method to systematically calculate and analyze the crystal microstructure and electronic structure of Ru-doped Sb2Te and Sb2Te3. In the crystal of Sb2Te and Sb2Te3, the substitution doping of Ru occupying the Sb site inside the [Sb2Te3] penta-atomic layer is the most stable. Ru forms strong covalent bonds with Sb and Te in the matrix, which can improve the structural stability and crystallization temperature. The substitution doping of Ru at Sb site increases the band gap and carrier effective mass of Sb2Te and Sb2Te3, resulting in the increase of their resistivity. At the same time, this doping mode can also maintain the excellent rapid reversible phase transition properties of Sb2Te and Sb2Te3.

materials science, multidisciplinary
Metal–insulator transition in ScxSb2Te3 phase-change memory alloys

Tao Song,Bin Chen,Jiatao Xie,Zhaoyang Liu,Huang Gong,Keyuan Ding,Feng Rao

DOI: https://doi.org/10.1063/5.0185388

IF: 4

2024-02-05

Applied Physics Letters

Abstract:The scandium doped antimony tellurides (ScxSb2Te3), as promising phase-change memory materials, possess the merits of ultrafast crystallization speed and ultralow resistance drift, of the amorphous phases, ensuring the development of cache-type universal memory and high-accuracy computing chip. There is keenness to further explore the annealing effect in the crystalline ScxSb2Te3 phases to seek a potential metal–insulator transition (MIT) in electrical conduction, by which more intermediate resistance states of superior stability can be generated to enhance the programming contrast and accuracy. In this work, we have identified the metastable rock salt ScxSb2Te3 as an Anderson-type insulator and verified that the MIT occurs in its stable rhombohedral grains when lattice vacancies are highly ordered into the van der Waals-like gaps. The Sc dopant can exert profound influence on retarding the vacancy-ordering procedure, even completely prohibiting the MIT for the Sc-rich compounds. Our work suggests that tuning Sc content in ScxSb2Te3 alloys provides a simple route to engineer the material microstructures and electrical properties for the desired memory and computing performances.

physics, applied
Simultaneously achieving high performance of thermal stability and power consumption via doping yttrium in Sn15Sb85 thin film

Shengqing Xu,Weihua Wu,Han Gu,Xiaochen Zhou,Xiaoqin Zhu,Jiwei Zhai,Sannian Song,Zhitang Song

DOI: https://doi.org/10.1088/1361-6528/acc80f

IF: 3.5

2023-03-30

Nanotechnology

Abstract:The effects of yttrium dopants on the phase change behaviour and microstructure of Sn15Sb85 films have been systematically investigated. The yttrium-doped Sn15Sb85 film has the higher phase transition temperature, ten-year data retention ability and crystallization activation energy, which represent the great improvement of thermal stability and data retention. X-ray diffraction, transmission electron microscopy and X-ray photoelectron spectroscopy reveal that the amorphous Sn and Y components restrict the grain growth and decrease the grain size. Raman mode typically associated with Sb are altered when the substance crystallized. Atomic force microscopy results show that the surface morphology of the doped films becomes smoother. T-shaped phase change storage cells based on yttrium-doped Sn15Sb85 films exhibit the lower power consumption. The results demonstrate that the crystallization characteristics of Sn15Sb85 film can be tuned and optimized through yttrium dopant for the excellent performances of phase change memory.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
High performance of Er-doped Sb2Te material used in phase change memory

Jin Zhao,Zhenhui Yuan,Wen-Xiong Song,Zhitang Song

DOI: https://doi.org/10.1016/j.jallcom.2021.161701

IF: 6.2

2021-12-01

Journal of Alloys and Compounds

Abstract:To date, operation speed and data retention are still bottlenecks for phase-change memory. Doping impurity is a practical strategy to improve these performances of phase-change memory. Here, to avoid the precipitation of impurity, we choose erbium (Er) dopant due to the most matched structure with parental Sb2Te (EST), which is manifested by both experimental and simulation results that Er locates at lattice position. The device tests show the excellent comprehensive performances: operation speed as fast as 6 ns and 10-year data retention as high as 121 °C. This excellent amorphous thermal stability stems from the strong ErTe bonds, and these stable local patterns stabilize glassy states and result in high stability. Our study not only demonstrates that the performance of designed EST meets the requirement of phase-change memory, but also provides general doping rules to obtain better comprehensive performance.

materials science, multidisciplinary,chemistry, physical,metallurgy & metallurgical engineering
Nano-composite phase-change antimony thin film for fast and persistent memory operations

Yimin Chen,Bin Chen,Lei Sun,Wenhao Leng,Yingjie Meng,Chenjie Gu,Yuanlin Chen,Tao Song,Jiaen Huang,Junqiang Wang,Guoxiang Wang,Xiang Shen,Feng Rao

DOI: https://doi.org/10.1016/j.mtphys.2021.100584

IF: 11.021

2022-01-01

Materials Today Physics

Abstract:Elemental Sb phase-change material (PCM) has to be diminished to nanometer in thickness to guarantee non-volatile memory storage. Integrating ultrathin Sb films poses great challenges in manufacturing high-density phase-change random-access memory (PCRAM) chips. Here, we introduce another feasible approach of utilizing nano-composite Sb–SiO2 PCM, for which we demonstrate superior phase-change properties of faster crystallization speed and better data retention ability over the conventional Ge2Sb2Te5 compound. These two seemingly conflicting features of the Sb–SiO2 are reconciled by an obvious fragile-to-strong crossover in crystallization kinetics of the supercooled Sb liquids via nanosize confinements, enabling the more suffocated atomic diffusion near room temperature and the comparable crystal growth at elevated temperatures to the Ge2Sb2Te5. The nanosize confinements also catalyze heterogeneous nucleation remarkably, therefore speeding up the SET operation of the Sb–SiO2-based PCRAM device by over two orders of magnitude as compared to the Ge2Sb2Te5-based one. In addition, owning the potentials to accomplish low-drift and long-life memory programming, the nano-composite Sb–SiO2 PCMs hold great promise to be employed for working memory and neuromorphic computing applications.

materials science, multidisciplinary,physics, applied
Ab initio molecular dynamics and materials design for embedded phase-change memory

Liang Sun,Yu-Xing Zhou,Xu-Dong Wang,Yu-Han Chen,Volker L. Deringer,Riccardo Mazzarello,Wei Zhang

DOI: https://doi.org/10.1038/s41524-021-00496-7

IF: 12.256

2021-02-08

npj Computational Materials

Abstract:Abstract The Ge 2 Sb 2 Te 5 alloy has served as the core material in phase-change memories with high switching speed and persistent storage capability at room temperature. However widely used, this composition is not suitable for embedded memories—for example, for automotive applications, which require very high working temperatures above 300 °C. Ge–Sb–Te alloys with higher Ge content, most prominently Ge 2 Sb 1 Te 2 (‘212’), have been studied as suitable alternatives, but their atomic structures and structure–property relationships have remained widely unexplored. Here, we report comprehensive first-principles simulations that give insight into those emerging materials, located on the compositional tie-line between Ge 2 Sb 1 Te 2 and elemental Ge, allowing for a direct comparison with the established Ge 2 Sb 2 Te 5 material. Electronic-structure computations and smooth overlap of atomic positions (SOAP) similarity analyses explain the role of excess Ge content in the amorphous phases. Together with energetic analyses, a compositional threshold is identified for the viability of a homogeneous amorphous phase (‘zero bit’), which is required for memory applications. Based on the acquired knowledge at the atomic scale, we provide a materials design strategy for high-performance embedded phase-change memories with balanced speed and stability, as well as potentially good cycling capability.

materials science, multidisciplinary,chemistry, physical
Bonding Nature and Optical Contrast of TiTe_2/Sb_2Te_3 Phase-Change Heterostructure

Yuxing Zhou

DOI: https://doi.org/10.1016/j.mssp.2021.106080

IF: 4.1

2021-01-01

Materials Science in Semiconductor Processing

Abstract:Chalcogenide phase-change materials (PCMs) are regarded as the leading candidate for storage-class non-volatile memory and neuro-inspired computing. Recently, using the TiTe_2/Sb_2Te_3 material combination, a new framework - phase-change heterostructure (PCH), has been developed and proved to effectively suppress the noise and drift in electrical resistance upon memory programming, largely reducing the inter-device variability. However, the atomic-scale structural and chemical nature of PCH remains to be fully understood. In this work, we carry out thorough ab initio simulations to assess the bonding characteristics of the PCH. We show that the TiTe_2 crystalline nanolayers do not chemically interact with the surrounding Sb_2Te_3, and are stabilized by strong covalent and electrostatic Ti-Te interactions, which create a prohibitively high barrier for atomic migrations along the pulsing direction. We also find significant contrast in computed dielectric functions in the PCH, suggesting possible optical applications of this class of devices. With the more confined space and therefore constrained phase transition compared to traditional PCM devices, the recently introduced class of PCH-based devices may lead to improvements in phase-change photonic and optoelectronic applications with much lower stochasticity during programming.
Nitrogen and Silicon Co-Doping of Ge2Sb2Te5 Thin Films for Improving Phase Change Memory Performance

Cai Yan-Fei,Zhou Peng,Lin Yin-Yin,Tang Ting-Ao,Chen Liang-Yao,Li Jing,Qiao Bao-Wei,Lai Yun-Feng,Feng Jie,Cai Bing-Chu,Chen Bomy

DOI: https://doi.org/10.1088/0256-307x/24/3/053

2007-01-01

Chinese Physics Letters

Abstract:Electrical properties and phase structures of (Si+N)-codoped Ge2Sb2Te5 (GST) for phase change memory are investigated to improve the memory performance. Compared to the films with N or Si dopants only in previous reports, the (Si+N)-doped GST has a remarkable improvement of crystalline resistivity of about 104mΩcm. The Fourier-transform infrared spectroscopy spectrum reveals the Si–N bonds formation in the film. X-ray diffraction patterns show that the grain size is reduced due to the crystallization inhibition of the amorphous GST by SiNx, which results in higher crystalline resistivity. This is very useful to reduce writing current for phase change memory applications.
Diffusion-assisted displacive transformation in Yttrium-doped Sb2Te3 phase change materials

Kaiqi Li,Bin Liu,Jian Zhou,Stephen R. Elliott,Zhimei Sun

DOI: https://doi.org/10.1016/j.actamat.2023.118809

IF: 9.4

2023-05-01

Acta Materialia

Abstract:Phase transformations between cubic and rhombohedral states of phase-change chalcogenide materials have been considered to result in small resistance drift, fast read/write speeds, and low power consumption in phase-change memory devices. However, it is difficult to observe such dynamic processes by experiments. Especially, the ultra-fast speed of, and ultra-small area affected during, the displacive transformation involved in the phase transformations, lead to a lack of direct evidence for studying the transformation mechanism. Here, we directly observed the reversible displacive transformations in Yttrium-doped Sb2Te3 (Y-Sb2Te3) by ab initio molecular-dynamics (AIMD) simulations. The forward displacive transformation, from the cubic to the rhombohedral phase, can be spontaneously realized through a two-step transformation, the shearing, and contraction between Te-Sb-Te-Sb-Te building blocks. On the other hand, the backward transformation, from the rhombohedral to the cubic phase, requires high-temperature heating (above 900 K) and atomic diffusion. The diffusion of cation-site Sb atoms into interstitial sites, located in the interlayers of building blocks, triggers the backward transformation; thus, it is diffusion-assisted. Moreover, the enhancement of thermostability of the cubic phase by Y dopants promotes the backward transformation. This study can improve the understanding of the displacive transformations in phase-change materials and may offer new insights into developing phase-change memory devices based on Sb2Te3.

materials science, multidisciplinary,metallurgy & metallurgical engineering
Study of Er-Sb and Er-Te parental alloys used in phase change memory

Jin Zhao,Zhenhui Yuan,Xiaodan Li,Wen-Xiong Song,Zhitang Song

DOI: https://doi.org/10.1016/j.jallcom.2022.164057

IF: 6.2

2022-05-01

Journal of Alloys and Compounds

Abstract:The erbium (Er)-alloyed Sb2Te3 phase-change material has recently been found to enable fast writing speed and high data retention due to the Er-stabilized precursor and the formation of coordinate bonds between Er and Te. However, the detailed characteristics of binary alloys about Er-Sb-Te system are still missing. In this work, Er-alloyed Sb/Te binary material are investigated. The Er20Sb80 compound we designed allows a ultra-fast writing speed of 0.7 ns in the conventional PCRAM device, and the Er13Te87 also can be switched under 50 ns. The impurity Er improves the ability of forming the amorphous structure of Sb/Te, and this stems from the strong Er-Sb and Er-Te bonds stabilize glassy states. Our study demonstrates the device performance of Er-alloyed Sb/Te binary phase-change material, and the origins of these improved performance are also explained by the microscopic observation and molecular dynamics simulation.

materials science, multidisciplinary,chemistry, physical,metallurgy & metallurgical engineering
Recipe for ultrafast and persistent phase-change memory materials

Keyuan Ding,Bin Chen,Yimin Chen,Junqiang Wang,Xiang Shen,Feng Rao

DOI: https://doi.org/10.1038/s41427-020-00246-z

IF: 10.761

2020-09-25

NPG Asia Materials

Abstract:Abstract The contradictory nature of increasing the crystallization speed while extending the amorphous stability for phase-change materials (PCMs) has long been the bottleneck in pursuing ultrafast yet persistent phase-change random-access memory. Scandium antimony telluride alloy (Sc x Sb 2 Te 3 ) represents a feasible route to resolve this issue, as it allows a subnanosecond SET speed but years of reliable retention of the RESET state. To achieve the best device performances, the optimal composition and its underlying working mechanism need to be unraveled. Here, by tuning the doping dose of Sc, we demonstrate that Sc 0.3 Sb 2 Te 3 has the fastest crystallization speed and fairly improved data nonvolatility. The simultaneous improvement in such ‘conflicting’ features stems from reconciling two dynamics factors. First, promoting heterogeneous nucleation at elevated temperatures requires a higher Sc dose to stabilize more precursors, which also helps suppress atomic diffusion near ambient temperatures to ensure a rather stable amorphous phase. Second, however, enlarging the kinetic contrast through a fragile-to-strong crossover in the supercooled liquid regime should require a moderate Sc content; otherwise, the atomic mobility for crystal growth at elevated temperatures will be considerably suppressed. Our work thus reveals the recipe by tailoring the crystallization kinetics to design superior PCMs for the development of high-performance phase-change working memory technology.

materials science, multidisciplinary
Understanding the microstructure evolution of carbon-doped Sb2Te3 phase change material for high thermal stability memory application

Mengyu Zhang,Ruobing Wang,Xixi Zou,Sannian Song,Yun Bao,Liangcai Wu,Zhitang Song,Xilin Zhou

DOI: https://doi.org/10.1063/5.0206244

IF: 4

2024-05-13

Applied Physics Letters

Abstract:The Sb2Te3 phase change material shows a growth-dominated crystallization mechanism with fast phase transition but poor thermal stability of the amorphous state. This work investigated the effects of carbon doping on the thermal stability, microstructure, and electrical properties of the Sb2Te3 material. The 10-year data retention temperature of the material increased to ∼147.3 °C and the size of the grains was limited to ∼10 nm by carbon doping. The formation of the C cluster upon crystallization was found at the grain boundaries, which was accelerated as the temperature increased due to the break of the Sb–C bonds. The memory device based on the carbon-doped Sb2Te3 material exhibited a switching speed of 15 ns and an endurance of ∼105 cycles with a resistance ratio of more than two orders of magnitude. This work suggests that the carbon-doped Sb2Te3 material is a promising candidate for memory applications that require high thermal stability, fast speed, and high endurance.

physics, applied

Synergy Effect of Co-Doping Sc and Y in Sb2Te3 for Phase-Change Memory

Co-doping: An effective strategy for developing stable and high-speed Sb2Te-based phase-change memory

Tuning Thermal Stability and Power Consumption of Sb2Te3 Phase Change Memory with Metallic Elements

Graphite Carbon-Doped Sb 2 Te Nanostructures for Phase-Change Memory Applications

Understanding Phase-Change Behaviors of Carbon-Doped Ge2sb2te5 for Phase-Change Memory Application

Ultrahigh overall-performance phase-change memory by Yttrium dragging

Atomic Scale Insight into the Effects of Aluminum Doped Sb2Te for Phase Change Memory Application

Strong atom capture ability and pinning effect by doping an element with large electronegativity difference in Sb 2 Te 3 phase change material

Cr-doped Sb2Te materials promising for high performance phase-change random access memory

Doping effects of Ru on Sb2Te and Sb2Te3 as phase change materials studied by first-principles calculations

Metal–insulator transition in ScxSb2Te3 phase-change memory alloys

Simultaneously achieving high performance of thermal stability and power consumption via doping yttrium in Sn15Sb85 thin film

High performance of Er-doped Sb2Te material used in phase change memory

Nano-composite phase-change antimony thin film for fast and persistent memory operations

Ab initio molecular dynamics and materials design for embedded phase-change memory

Bonding Nature and Optical Contrast of TiTe_2/Sb_2Te_3 Phase-Change Heterostructure

Nitrogen and Silicon Co-Doping of Ge2Sb2Te5 Thin Films for Improving Phase Change Memory Performance

Diffusion-assisted displacive transformation in Yttrium-doped Sb2Te3 phase change materials

Study of Er-Sb and Er-Te parental alloys used in phase change memory

Recipe for ultrafast and persistent phase-change memory materials

Understanding the microstructure evolution of carbon-doped Sb2Te3 phase change material for high thermal stability memory application