Abstract:Abstract In this study, an Ar/O 2 plasma mixture treatment with different proportions of O 2 was used to reduce the oxygen vacancy density in an amorphous indium gallium zinc oxide (a-IGZO) thin film. The objective was to enhance the field-effect carrier mobility in a thin-film transistor (TFT) with the IGZO film as the channel layer. Atomic force microscopy revealed that the roughness of the IGZO film after plasma treatment was higher than that of the untreated film; however, the surface roughness of the IGZO film decreased after the proportion of O 2 was increased in the plasma. The Hall measurement results showed that the resistivity of the plasma-treated IGZO film increased with a decrease in the electron concentration in the film; in addition, the carrier mobility considerably increased. The IGZO TFT fabricated from this film exhibited a high field-effect carrier mobility of 36 cm 2 V −1 s −1 , a subthreshold swing (SS) of 1.25 V/decade, an I OFF current of 4.58 × 10 −11 A, and an I ON / I OFF current ratio of 7.55 × 10 5 . To further improve the device performance, the plasma-treated IGZO films were subjected to thermal annealing with the annealing temperature ranging from 100 °C to 300 °C. After the annealing process, the plasma-treated IGZO TFTs demonstrated a further improvement in the device performance with a field-effect carrier mobility of 38.8 cm 2 V −1 s −1 , SS of 0.7 V/decade, I OFF current of 1.04 × 10 −11 A, and an I ON / I OFF current ratio of 9.93 × 10 6 . In addition, a reliability test was performed to evaluate the stability of the IGZO TFT devices, which revealed that the threshold voltage maintained a high degree of stability during the long-term tests. Therefore, the plasma-treated IGZO TFTs with subsequent postgrowth annealing could be helpful for the fabrication of next-generation flat-panel displays.

Influence of ITO Anneal on the Transmittance Property of HADS TFT-LCD

The Effects Of Annealing On Characteristics Of The Ito Films

Effects of Annealing Process on Characteristics of Fully Transparent Zinc Tin Oxide Thin-Film Transistor

Performance Optimization of Nanometer-Thin Indium-Tin Oxide Transistors by Two-Step Air Annealing

Enhancement of Two-Step Low-Temperature Annealing Treatment on Electrical Performance of In-Sn-O Thin-Film Transistors

P‐1.10: The Effects of Annealing Atmosphere on Dual Gate Dielectric ITO TFTs

Optimizing Photonic Annealing Technique for High-k Dielectric of Full-Solution-Processed Oxide Thin Film Transistor

Effect Of Bias And Postdeposition Vacuum Annealing On Structure And Transmittance Of Ito Films

Influence of Indium Tin Oxide Residues on Electrical Performance of Hydrogenated Amorphous Silicon Thin Film Transistors in Backplane of Active Matrix Displays

Influence of Thermal Annealing on Electrical and Optical Properties of Indium Tin Oxide Thin Films

Effect of Post-Deposition Annealing on the Structural Evolution and Optoelectronic Properties of In2O3:H Thin Films.

Intense pulsed light annealing of solution-based indium-gallium-zinc-oxide semiconductors with printed Ag source and drain electrodes for bottom gate thin film transistors

P‐1.2: Photoluminescence and Electrical Properties Study of ITO‐stabilized ZnO Thin‐Film Transistors with Different Annealing Temperatures

Effect of Annealing Temperature on Performance of Amorphous InWO Thin Film Transistors

Effect of Atmosphere Dependent Annealing on the Electrical Characteristics of a-In2O3 Thin-film Transistors

Effects of Annealing Atmosphere on Electrical Performance and Stability of High-Mobility Indium-Gallium-Tin Oxide Thin-Film Transistors

Influence of Annealing Temperature on the Microstructure and Electrical Properties of Indium Tin Oxide Thin Films

Influence of Deposition Parameters of ITO Films on the Performance of HJT Solar Cells

Improvement of device characteristics of plasma-treated indium gallium zinc oxide thin-film transistors through thermal annealing

Effect of Annealing in ITO Film Prepared at Various Argon-and-Oxygen-Mixture Ratios via Facing-Target Sputtering for Transparent Electrode of Perovskite Solar Cells

Enhancement in Performance and Reliability of Transparent IGZO Thin-Film Transistors by ITO/Ti Stacked Source/Drain Contacts