Abstract:Bottom‐gate thin‐film transistors (TFTs) with ITO‐stabilized ZnO channel layers were successfully fabricated by co‐sputtering of ZnO target and ITO target. We investigate the effects of the post‐deposition thermal annealing temperature on the defects inside of the ITO‐stabilized ZnO thin film and on the electrical performance of ITO‐stabilized ZnO TFTs. The beneficial effect of various annealing temperature appears because of a reorganization of the amorphous network with controlling the defect chemistry in the films indicated by photoluminescence analysis. ITO‐stabilized ZnO thin film with the annealing temperature of 300°C exhibited less intense defect emission peaks due to reduction in the number of vacancies and interstitials via filling the oxygen vacancies with O2, and diffusion of zinc interstitial to exact sites (VZn) of the system. Furthermore, We systematically investigated the impact of various annealing temperature on their performance characteristics. It was found that ITO‐stabilized ZnO TFT with annealing temperature of 300°C exhibited fairly high electrical characteristics, especially with a saturation field‐effect mobility of 27.4 cm2V−1s−1 and the threshold voltage as low as −0.64 V. The implied correlation between the post‐deposition thermal treatment and the characteristics of a transistor was investigated and demonstrated by photoluminescence analysis.

P‐1.10: The Effects of Annealing Atmosphere on Dual Gate Dielectric ITO TFTs

Effects of Annealing Atmosphere on Electrical Performance and Stability of High-Mobility Indium-Gallium-Tin Oxide Thin-Film Transistors

Effects of Annealing Gas on Electrical Properties and Reliability of Ge MOS Capacitors with HfTiON As Gate Dielectric

Effects of Annealing Process on Characteristics of Fully Transparent Zinc Tin Oxide Thin-Film Transistor

Effect of Atmosphere Dependent Annealing on the Electrical Characteristics of a-In2O3 Thin-film Transistors

Atmosphere Effect in Post-Annealing Treatments for Amorphous InGaZnO Thin-Film Transistors with SiOx Passivation Layers

Influence of Post-Annealing on Electrical Characteristics of Thin-Film Transistors with Atomic-Layer-Deposited Zno-Channel/Al2o3-Dielectric

Annealing effects of In2O3 thin films on electrical properties and application in thin film transistors

P‐1.2: Photoluminescence and Electrical Properties Study of ITO‐stabilized ZnO Thin‐Film Transistors with Different Annealing Temperatures

Improvement of Negative Bias Temperature Illumination Stability of Amorphous IGZO Thin-Film Transistors by Water Vapor-Assisted High-Pressure Oxygen Annealing

Effects of thermal annealing on the electrical characteristics of In-Ga-Zn-O thin-film transistors with Al2O3 gate dielectric

The Effects of Post Annealing Process on the Electrical Performance and Stability of Al-Zn-O Thin-Film Transistors

Performance Optimization of Nanometer-Thin Indium-Tin Oxide Transistors by Two-Step Air Annealing

P‐1.12: Vacuum Annealing Treatment on High‐Performance AlZnO Thin Film Transistors

The Effects Of Annealing On Characteristics Of The Ito Films

P‐21: the Effect of Thermal Annealing Sequence on the Performance of Self‐Aligned Top‐Gate A‐igzo TFTs

Performance Improvement of Reactive Magnetron Sputtering ZnO-TFT after Annealing in N2 Ambient

Stability Study of Indium Tungsten Oxide Thin-Film Transistors Annealed under Various Ambient Conditions

Effect of Annealing Temperature on Electrical Properties of ZTO Thin-Film Transistors

Effect of vacuum annealing on indium tin oxide transistor with nanometer-thin channel

Influences of vacuum annealing induced oxygen defects on the transfer characteristics of a-ITO thin-film transistors